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Tunable indium tin oxide thin film as saturable absorber for generation of passively Q-switched pulse erbium-doped fiber laser
摘要： A tunable Q-switched pulse erbium-doped ?ber (EDF) laser using indium tin oxide (ITO) thin-?lm-based saturable absorber (SA) is proposed and demonstrated. The SA is formed by depositing an ITO layer using DC magnetron sputtering on the ?ber ferrule, which can be easily fabricated in less than 200 s with thickness of 17.80 nm. The proposed tunable Q-switched pulse EDF laser is operated from 1540.0 to 1570.0 nm, covering a total wavelength of 30.0 nm. The generated output pulses displayed a repetition rate range between 21.70 and 94.34 kHz. The shortest pulse width retrieved is 3.22 ls at the maximum pump power of 378.6 mW, while the maximum pulse energy recorded is 30.29 nJ. To the best of the authors’ knowledge, this appears to be the ?rst proposed tunable passively Q-switched pulse EDF laser using ITO that serves as SA, which can promote ITO ?lm in the application of ultrafast photonics.
关键词： DC magnetron sputtering,Saturable absorber,Indium tin oxide,Q-switching ?ber laser
更新于2025-09-23 15:19:57
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Epsilon-near-zero medium for optical switches in Ho solid-state laser at 2.06????m
摘要： Indium tin oxide (ITO), an epsilon-near-zero material in the low-dimensional family, was successfully fabricated and first used as an optical switcher in 2.06 μm. In the Tm:fiber pumped passively Q-switched laser, a maximum average output power of 312 mW was obtained with a shortest pulse width of 2.42 μs and a repetition rate of 20.53 kHz, corresponding to a single pulse energy and a peak power of 15.20 μJ and 6.28 W, respectively. Results suggest that ITO is looking forward to develop into a kind of suitable saturable absorber for generation of nanosecond pulse in solid state lasers.
关键词： Passively Q-switched,Optical switch,Indium tin oxide,Epsilon-near-zero,2.06 μm
更新于2025-09-23 15:19:57
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Electrochemical Immunosensor for Human IgE Using Ferrocene Self-Assembled Monolayers Modified ITO Electrode
摘要： The immunoglobulin E (IgE) level in serum is an important factor in the examination of allergy. Ferrocene (Fc)-modified self-assembled monolayers (SAMs) were placed on an indium tin oxide (ITO) electrode as a sensing layer for the detection of human IgE. The Fc moiety in the SAMs facilitated the electron transfer through the organic SAMs layer and electrocatalytic signal amplification. The electrochemical measurement was accomplished after the sandwich type immobilization of the receptor antibody, target human IgE, and enzyme conjugated secondary antibody. The enzyme product, p-aminophenol, was quantitatively analyzed by redox cycling via Fc. In addition, the electrochemical impedance spectroscopy (EIS) was investigated for the detection of IgE. The limit of detection (LOD), limit of quantification (LOQ), and dynamic range of the electrochemical sensor were 3 IU/mL, 10 IU/mL, and from 10 IU/mL to 100 IU/mL, respectively.
关键词： electrocatalytic reaction,indium tin oxide (ITO),human immunoglobulin E,electrochemical impedance spectroscopy,ferrocene
更新于2025-09-23 15:19:57
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Structure-activity relationships of hierarchical three-dimensional electrodes with photosystem II for semi-artificial photosynthesis
摘要： Semi-artificial photosynthesis integrates photosynthetic enzymes with artificial electronics, which is an emerging approach to reroute the natural photoelectrogenetic pathways for sustainable fuel and chemical synthesis. However, the reduced catalytic activity of enzymes in bioelectrodes limits the overall performance and further applications in fuel production. Here, we show new insights into factors that govern the photoelectrogenesis in a model system consisting of photosystem II and three-dimensional indium tin oxide and graphene electrodes. Fluorescence microscopy and in situ surface-sensitive infrared spectroscopy are employed to probe the enzyme distribution and penetration within electrode scaffolds of different structures, which is further correlated with protein film-photoelectrochemistry to establish relationships between the electrode structure and enzyme activity. We find that the hierarchical structure of electrodes mainly affects the protein integration, but not the enzyme activity. Photoactivity is more limited by light intensity and electronic communication at the biointerface. This study provides guidelines for maximizing the performance of semi-artificial photosynthesis and also presents a set of methodologies to probe the photoactive biofilms in three-dimensional electrodes.
关键词： semi-artificial photosynthesis,Photosystem II,inverse opal,graphene electrode,indium tin oxide electrode
更新于2025-09-19 17:15:36
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Determination of dopamine using the indium tin oxide electrode modified with direct electrodeposition of gold–platinum nanoparticles
摘要： Gold–platinum (Au–Pt) nanoparticles (NPs) with a ratio of 3:1 solution of chloride salts in the starting electrolyte were deposited on an indium tin oxide (ITO) surface, using a direct electrochemical method, by 40 successive cyclic voltammetry (CV) scans to obtain AuPtNPs/ITO electrode. The deposited nanoparticles were defined by energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM) and electrochemical methods. The nanoparticles size of electrodeposited was ~ 30 nm based on SEM results. The efficacy of number of CV scans in the electrodeposition of nanoparticles on the size of electrodeposited nanoparticles was tested. The elemental composition of AuPtNPs/ITO electrode was determined by EDX. Electrochemical studies proved that the electrocatalytic activity of prepared electrode is excellent towards the oxidation of dopamine (DP). The concentration range of DP from 400 nM to 350 μM was linear and limit of detection DP was 20 nM. It was shown that the AuPtNPs/ITO electrode can be used as a sensor with high reproducibility, sensitivity, and long term stability. The selectivity of electrode for determination of DP was verified with investigating the effect of substances by potential interference on the response of electrode. AuPtNPs/ITO electrode was used for the determination of DP in injection and real samples, with acceptable results.
关键词： Dopamine,Gold–platinum alloy,Nanoparticles,Indium tin oxide electrode
更新于2025-09-19 17:15:36
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Antireflection Coatings with Graded Refractive Index of Indium Tin Oxide for Si-based Solar Cells
摘要： The glancing angle deposition (GLAD) technique for fabricating an antire?ection (AR) structure with graded refractive index was applied to silicon substrate by using indium tin oxide (ITO) combining the sputtering method with the evaporation method. In spite of the very limited refractive index pro?le of ITO compared to that of the silicon substrate, the designed AR coatings at wavelengths from near infrared to near ultraviolet showed a re?ectance of only 5.31% at an incident angle of 30? while the transmittance of the ITO AR layer showed a sharp decrease near a wavelength of 400 nm. From these analyses, ITO multilayered AR coatings fabricated by using the GLAD method should improve the performance of an optical device after post-annealing at a low temperature of 160 ?C. When the ITO AR coatings were applied to actual silicon solar cells, it appears that a non-grid electrode cell with ITO AR coatings is possible compared with insulator AR coatings with metal grid electrodes
关键词： Anti-re?ection coating,Solar cells,Glancing angle deposition,Indium tin oxide
更新于2025-09-19 17:15:36
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Self-Assembled Monolayers with Embedded Dipole Moments for Work Function Engineering of Oxide Substrates
摘要： Self-assembled monolayers (SAMs) are frequently used for work function (WF) engineering of different materials. For this, typically dipolar groups are attached to the molecule terminus at the SAM?ambient interface, which also influences its chemistry. WF engineering and interface chemistry can, however, be decoupled from one another using embedded dipolar groups, as has been demonstrated before for thiolate SAMs on metals. Herein, we extend this concept to oxide substrates. For this, a series of biphenyl-based molecules with a phosphonic acid (PA) anchoring group was synthesized, with one of the nonpolar phenyl units exchanged for a polar pyrimidine moiety, the dipole moment of which is oriented either toward (“down”) or away (“up”) to/from the PA group and, consequently, to/from the substrate. SAMs of these molecules formed on indium tin oxide (ITO), a frequently used and application-relevant oxide substrate, feature a uniform molecular configuration, dense molecular packing, and an upright molecular orientation. These SAMs exhibit pronounced electrostatic effects associated with the embedded dipolar groups, viz. shifts of the characteristic peaks in the C 1s X-ray photoelectron spectra and WF variations. The latter values were found to be 3.9, 4.85, and 4.4 eV for the up, down, and nonpolar reference SAM-engineered ITO, respectively. Consequently, these SAMs can serve as a powerful tool to monitor WF engineering effects in a variety of device assembles, decoupling these effects from the interface chemistry. The comparably low WF value for the up SAM is particularly important since it extends a rather limited variety of SAMs capable of lowering the WF of ITO.
关键词： Phosphonic acid,Self-assembled monolayers,Work function engineering,Embedded dipolar groups,Indium tin oxide,Oxide substrates
更新于2025-09-19 17:13:59
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Epsilon-near-zero response in indium tin oxide thin films: Octave span tuning and IR plasmonics
摘要： Epsilon near zero (ENZ) materials exhibit strongly confined optical modes and plasmonic response around and beyond the ENZ wavelength (λENZ). In order to exploit the novel properties of ENZ materials for real-world applications, it is important to develop material platforms that offer continuous tuning of λENZ from 1280 nm to 2900 nm in commercially available thin films of indium tin oxide (ITO), employing a low temperature annealing protocol. Electrical, spectroscopic, and optical measurements establish the physical basis of the observed tunability in free electron density by over an order of magnitude and quantify the real and imaginary components of the refractive index for ITO thin films. Excitation of surface plasmon polaritons (SPPs) in the metallic regime of ITO probes its infrared plasmonic response demonstrating continuous tunability of SPP frequency and crossover to the tunable ENZ plasmon mode in ultrathin films. Finally, dispersion tuning of optical fiber modes by optical coupling with a tunable λENZ platform is demonstrated by investigating modal interference in a tapered silica fiber in contact with various custom tuned ITO films.
关键词： plasmonics,tuning,optical properties,Epsilon near zero,indium tin oxide
更新于2025-09-19 17:13:59
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Development of indium tin oxide stack layer using oxygen and argon gas mixture for crystalline silicon heterojunction solar cells
摘要： Indium tin oxide (ITO) films were used as transparent conductive oxide (TCO) layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. An ITO film was deposited by radio frequency (RF) magnetron sputtering with the oxygen-argon (O2–Ar) gas mixture. The increasing of the O2/Ar ratio in ITO film deposition resulted in the improvement of transmittance and short circuit current density (Jsc) of c-Si-HJ solar cells, while film electrical property, fill factor (FF) and efficiency (η) of the solar cell were decreased. The enhancement of the Jsc and FF caused by the ITO stack layer on the efficiency of the c-Si-HJ solar cell was investigated. The c-Si-HJ solar cells using an ITO stack layer have a high photovoltaic (PV) parameter compared to conventional ITO (Ar gas) and ITO (O2–Ar gas mixture) layer. By using an ITO stack layer for a c-Si-HJ solar cell, the efficiency achieved was as high as 18.4%. (Voc ? 702 mV, Jsc ? 34.8 mA/cm2, FF ? 0.75).
关键词： O2–Ar gas mixture,ITO stack layer,solar cell,Crystalline silicon heterojunction (c-Si-HJ),Indium tin oxide
更新于2025-09-19 17:13:59
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High-repetition-rate laser-induced damage of indium tin oxide films and polyimide films at a 1064 nm wavelength
摘要： Experiments and thermal modeling of indium tin oxide transparent conductive thin film and polyimide alignment thin film coated on fused silica substrates damaged with a 1064 nm high-repetition-rate laser are described. High-repetition-rate laser irradiation results in damaged morphologies of the bulge at low laser power density and formation of a pit in the center of the bulge at higher laser power density. The damage process that is consistent with the observations as a function of laser power density and irradiation time is related to thermal effect. Simulation of the temperature-rise by exposure to high-repetition-rate laser describes the thermal effect with different pulse oscillation.
关键词： high-repetition-rate laser,polyimide,laser-induced damage,thermal modeling,indium tin oxide
更新于2025-09-19 17:13:59