- 标题
- 摘要
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- 实验方案
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Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs
摘要： An approach is proposed to realize large-scale, “high-temperature” and high-fidelity quantum computing ICs based on single- and multiple coupled quantum-dot electron- and hole-spin qubits monolithically integrated with the mm-wave spin manipulation and readout circuitry technology. Measurements of minimum-size 6nmx20nmx80nm Si-channel n-MOSFETs (electron-spin qubit), SiGe-channel p-MOSFETs (hole-spin qubit), and double quantum-dot complementary qubits reveal strong quantum effects in the subthreshold region at 2 K, characteristic of resonant tunneling in a quantum dot. S-parameter measurements of a transimpedance amplifier (TIA) for spin readout show improved performance from 300 K to 2 K. Finally, the qubit-with-TIA circuit has 50Ω output impedance, 78dBΩ transimpedance gain with unity-gain bandwidth of 70 GHz and consumes 3.1 mW.
关键词： CMOS,silicon-on-insulator,quantum information processing,radio frequency,monolithic integrated circuits,semiconductor quantum dots,silicon,cryogenics
更新于2025-09-10 09:29:36
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Low-power-consumption optical interconnect on silicon by transfer-printing for used in opto-isolators
摘要： On-chip optical interconnects heterogeneously integrated on silicon wafers by transfer-print technology are presented for the first time. Thin (<5 μm), micron sized light-emitting diodes (LEDs) and photo diodes (PDs) are prefabricated and transfer-printed to silicon wafer with polymer waveguides built between them. Data transmission with total power consumption as low as 1 mW, signal to noise ratio of >250 and current transfer ratio of 0.1% in a compact volume of <0.0004 mm3 are demonstrated. Experiment shows that the polymer waveguide between the LED and PD plays a key role in enhancing the data transmission efficiency. Reciprocal performance for bidirectional transmission is also achieved. The results show the potential for cost-effective and low profile form-factor on-chip opto-isolators.
关键词： Photonic integrated circuits,Heterogeneous integration,Optical interconnects
更新于2025-09-10 09:29:36
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Reconfigurable On-Chip Mode Exchange for Mode-Division Multiplexing Optical Networks
摘要： Data exchange plays a key role in enhancing network resources utilization and optimizing network performance. In this paper, a data exchange device based on mode-division multiplexing (MDM) technology is proposed and demonstrated, which is capable of exchanging data information between a fundamental mode (TE0) signal and an arbitrary high-order mode (TEx) signal. We experimentally demonstrate the exchange between a TE0 mode signal and a TE1 mode signal using single microring resonator. The insertion loss is about 7.5 dB including terminal coupling loss, the extinction ratio is more than 20 dB within the C band. The crosstalk for the TE1-to-TE0 and TE0-to-TE1 mode conversions is measured to be less than -22 dB and -16 dB, respectively. Clear and open eye diagrams of two different wavelength signals at 10 Gb/s are obtained. The proposed scheme is expected to be used for on-chip MDM networks in future due to its scalability, compact size and low power consumption.
关键词： photonic integrated circuits,microring resonator (MRR),Silicon photonics,mode-division multiplexing,integrated optics
更新于2025-09-09 09:28:46
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All-2D Material Inkjet-Printed Capacitors: Towards Fully-Printed Integrated Circuits
摘要： A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, non-contact approach, which also allows for device design flexibility, produces no material wastage and offers compatibility with almost any surface of interest, including flexible substrates. In this work we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 ± 0.3 nF cm-2 for a dielectric thickness of ~3 μm and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 ± 1.7. The inkjet printed hBN dielectric has a breakdown field of 1.9 ± 0.3 MV cm-1. Fully printed capacitors with sub-μm hBN layer thicknesses have also been demonstrated. The capacitors are then exploited in two fully printed demonstrators: a resistor-capacitor (RC) low-pass filter and a graphene-based field effect transistor.
关键词： capacitors,2D-materials,integrated circuits,inkjet,printed electronics
更新于2025-09-09 09:28:46
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Automatic Monitor-Based Tuning of an RF Silicon Photonic 1X4 Asymmetric Binary Tree True-Time-Delay Beamforming Network
摘要： Photonic beamforming networks are promising candidates to achieve power-efficient transmission in future cellular communication systems. However, sensitivity to process and temperature variations necessitates an automatic calibration solution to enable robust operation. This paper demonstrates fully automatic monitor-based tuning of an integrated optical ring resonator-based 1X4 asymmetric binary tree optical beamforming network (OBFN). The proposed monitor-based tuning algorithm compensates fabrication variations and thermal crosstalk by controlling micro-heaters individually using information from electrical monitors. This algorithm is demonstrated on an OBFN that operates at 30 GHz with 2 GHz bandwidth and is fabricated in a standard silicon photonics foundry process. Successful calibration of the OBFN from a severely degraded initial response to the well-defined group delay responses required for a targeted radiating angle over 60? (?30? to 30?) in a linear beamforming antenna array is achieved. This fully automatic tuning approach opens the possibility of employing silicon OBFNs in real wideband mm-wave wireless communication systems.
关键词： optical ring resonators,thermal crosstalk,photonic integrated circuits,phased arrays,RF photonics,optical beamforming,true time delays,Microwave photonics
更新于2025-09-09 09:28:46
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A Substrate Model for On-Chip Tapered Spiral Inductors With Forward and Reverse Excitations
摘要： In this brief, closed-form analytical expressions are obtained to accurately calculate the oxide and substrate (both lateral/vertical) capacitances of the π-equivalent circuit model for on-chip tapered spiral inductors. A lateral RC substrate network using the above-mentioned expressions is shown to significantly improve the model accuracy, especially with lower substrate resistivities. Furthermore, improvement in Qmax with reverse excitation in tapered spirals is also accurately predicted by the proposed model. The accuracy of the proposed model is validated till 15 GHz using several inductor geometries across process parameters suitable for the design of RF circuits. Excellent agreement is observed between the model, electromagnetic simulations, and measurements.
关键词： CMOS,forward excitation,spiral inductor,substrate model,taper,reverse excitation,Capacitive coupling,radio frequency integrated circuits,quality factor
更新于2025-09-09 09:28:46
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DSP-free and Real-Time NRZ transmission of 50 Gb/s over 15 km SSMF and 64 Gb/s back-to-back with a 1.3 μm VCSEL
摘要： We demonstrate and analyze 50 Gb/s non-return-to-zero (NRZ) transmission over 15 km of standard single-mode fiber (SSMF), 60 Gb/s NRZ transmission over 5 km of SSMF and up to 64 Gb/s NRZ back-to-back using a directly modulated short-cavity long-wavelength single-mode VCSEL emitting at 1326 nm. Owing to an analog 6-tap transmit feedforward equalizer, the link can operate without digital signal processing. In all three cases, real-time bit error ratio measurements below the 7% overhead hard-decision forward error correction (FEC) threshold are demonstrated when transmitting a pseudo-random bit sequence (PRBS) with a period of 27-1 bits. In addition, we analyze the interplay between the residual fiber chromatic dispersion at the operating wavelength of the VCSEL and the chirp due to direct modulation. These results demonstrate how O-band, short-cavity long-wavelength single-mode VCSELs can be used in intra data center networks, as well as inter data center networks at reaches below 15 km.
关键词： Fiber Optics Communications,Optical Interconnections,Vertical Cavity Surface Emitting Lasers,BiCMOS integrated circuits,Chirp,Analog Equalization
更新于2025-09-09 09:28:46
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - A low-pass filter made up of the cylindrical through-silicon-via
摘要： the concept of three-dimensional integrated circuits has been widely practiced in many fields such as SoC (system on chip) DSP (image signal processor). It is well-known that through-silicon-via (TSV) has not only been used as interconnection between vertical layers but been applied to more fields like radio frequency (RF). In this paper, a low-pass filter (LPF) based on the cylindrical TSV consists of two planar spiral inductors and one TSV capacitor. The simulation result shows that the cutoff frequency is about 20GHz and the area is only 10850 um2.
关键词： Three-dimensional integrated circuits (3D IC),low-pass filter,through-silicon-via (TSV)
更新于2025-09-09 09:28:46
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Quarter Video Graphics Array Digital Pixel Image Sensing With a Linear and Wide-Dynamic-Range Response by Using Pixel-Wise 3-D Integration
摘要： We have developed a quarter video graphics array (QVGA) digital pixel image sensor by using the 3-D integration technology. The pulse-frequency modulation (PFM) analog-to-digital converter (ADC) operates as a digital pixel, which overcomes the signal saturation due to the full well capacity of the photodiode (PD). We have also newly designed a PFM-ADC for pixels with a pinned PD and a floating diffusion to comply with the CMOS image sensor process used to attain high sensitivity and low noise. PDs, comparators, logic circuits, and counters are integrated into two silicon-on-insulator layers by pixel-wise 3-D integration with gold electrodes with a 5 μm diameter, thereby achieving a QVGA resolution for a 20-mm square chip in the 0.18- and 0.2-μm process nodes. The developed sensor exhibits both the excellent linearity and a wide-dynamic range of more than 96 dB. Video images with a high bit depth of 16 bit are also obtained to demonstrate the superior image sensing, capable of capturing the real world at high fidelity.
关键词： analog-to-digital converters (ADCs),dynamic range,image sensors,3-D integrated circuits,integrated circuit interconnections,pulse generation,silicon on insulator (SOI)
更新于2025-09-04 15:30:14
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Formation of silver films for advanced electrical properties by using aerosol deposition process
摘要： A simple room temperature aerosol deposition (AD) process was used to fabricate silver thick films for high efficiency metallization that can be applied to decrease the resistance–capacitance delay and increase the signal propagation speed in integrated circuits. To obtain more advanced performance than aerosol-deposited silver films reported in previous studies, experimental parameters (orifice size of nozzle and gas consumption) that could directly affect electrical resistivity were optimized in advance. The proper small orifice size was selected for facilitated reduction of electrical resistivity by activating the percolation effect and making more conduction channels. High gas consumption also reduced the electrical resistivity of the silver films, forming plenty of metal clusters. Using experimental parameters that showed the lowest resistivity, silver thick films were fabricated via the AD process and their properties were analyzed. The results of the X-ray diffraction confirmed that the silver particles underwent impact-induced plastic deformation. As the film thickness was thickened up to 12 scans, the collided particles filled up the rough alumina substrate. After 12 scans, the silver films became densified due to severe plastic deformation of the as-deposited silver particles. Therefore, the growth mechanism suggests that most silver particles in the initial deposition step contribute to mechanical interlocking, and the subsequent particles could lead to film densification.
关键词： aerosol deposition,electrical resistivity,silver films,metallization,integrated circuits
更新于2025-09-04 15:30:14