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Towards High Solar Cell Efficiency with Low Material Usage: 15% Efficiency with 14 ?μm Polycrystalline Silicon on Glass
摘要： This work showcases a bottom-up approach to creating silicon solar cells using a line-shaped laser. We report efforts to create thicker amorphous silicon passivation and contact layers as well as laser firing for low contact resistance. Collectively, a new in-house record efficiency of 15.1 % was achieved along with a clear pathway to reach 16 % efficiency with optimization of series resistance.
关键词： Foreign substrates,Liquid phase crystallized silicon,Passivation,Silicon Heterojunction Interdigitated back contact,Laser fired contacts
更新于2025-11-14 15:25:21
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A Low Frequency Vibration Energy Harvester Using ZnO Nanowires on Elastic Interdigitated Electrodes
摘要： This paper presents a low frequency piezoelectric vibration energy harvester using ZnO nanowires on elastic interdigitated electrodes. The interdigitated electrodes are formed using electroplated Ni and have suspended parts at the edges that are elastic and deformable by applying external force. A spherical Ni ball is used as a proof mass, which transforms a low frequency mechanical vibration into the force applied to deform the elastic electrodes. The ZnO nanowires are grown selectively on the electrodes and can generate a piezoelectric potential when the elastic electrodes are deformed by the proof mass activated by the external mechanical vibration. The proposed operation concept is demonstrated using two different types of energy harvesters, which have simple suspended part and cantilever array structures added to the electrodes, respectively. The output voltage of the fabricated harvesters is measured using a vibration exciter at 6 Hz sinusoidal vibration with an acceleration of 0.5 g. Maximum output power of 12.8 pW and 18.8 pW was generated with a load resistance of 1 MΩ for the harvesters using the simple suspended structure and cantilever array, respectively.
关键词： Spherical Proof Mass,Elastic Interdigitated Electrodes,ZnO Nanowires,Low Frequency Piezoelectric Vibration Energy Harvester
更新于2025-09-23 15:23:52
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A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact <i>in situ</i> with efficiencies close to 23%
摘要： We present a novel process sequence to simplify the rear‐side patterning of the silicon heterojunction interdigitated back contact (HJ IBC) cells. In this approach, interdigitated strips of a‐Si:H (i/p+) hole contact and a‐Si:H (i/n+) electron contact are achieved by partially etching a blanket a‐Si:H (i/p+) stack through an SiOx hard mask to remove only the p+ a‐Si:H layer and replace it with an n+ a‐Si:H layer, thereby switching from a hole contact to an electron contact in situ, without having to remove the entire passivation. This eliminates the ex situ wet clean after dry etching and also prevents re‐exposure of the crystalline silicon surface during rear‐side processing. Using a well‐controlled process, high‐quality passivation is maintained throughout the rear‐side process sequence leading to high open‐circuit voltages (VOC). A slightly higher contact resistance at the electron contact leads to a slightly higher fill factor (FF) loss due to series resistance for cells from the partial etch route, but the FF loss due to J02‐type recombination is lower, compared with reference cells. As a result, the best cell from the partial etch route has an efficiency of 22.9% and a VOC of 729 mV, nearly identical to the best reference cell, demonstrating that the developed partial etch process can be successfully implemented to achieve cell performance comparable with reference, but with a simpler, cheaper, and faster process sequence.
关键词： interdigitated back contact (IBC),H2 plasma,amorphous silicon,heterojunction,dry etch,process simplification,NF3/Ar plasma,in situ processing
更新于2025-09-23 15:23:52
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Increased multiplexing of superconducting microresonator arrays by post-characterization adaptation of the on-chip capacitors
摘要： We present an interdigitated capacitor trimming technique for fine-tuning the resonance frequency of superconducting microresonators and increasing the multiplexing factor. We first measure the optical response of the array with a beam mapping system to link all resonances to their physical resonators. Then, a new set of resonance frequencies with uniform spacing and higher multiplexing factor is designed. We use simulations to deduce the lengths that we should trim from the capacitor fingers in order to shift the resonances to the desired frequencies. The sample is then modified using contact lithography and re-measured using the same setup. We demonstrate this technique on a 112-pixel aluminum lumped-element kinetic-inductance detector array. Before trimming, the resonance frequency deviation of this array is investigated. The variation of the inductor width plays the main role for the deviation. After trimming, the mean fractional frequency error for identified resonators is (cid:1)6.4 (cid:2) 10(cid:1)4, with a standard deviation of 1.8 (cid:2) 10(cid:1)4. The final optical yield is increased from 70.5% to 96.7% with no observable crosstalk beyond (cid:1)15 dB during mapping. This technique could be applied to other photon-sensitive superconducting microresonator arrays for increasing the yield and multiplexing factor.
关键词： interdigitated capacitor trimming,lumped-element kinetic-inductance detector,superconducting microresonators,multiplexing factor,resonance frequency tuning
更新于2025-09-23 15:21:01
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Laser firing in silicon heterojunction interdigitated back contact architecture for low contact resistance
摘要： This work reports a laser firing technique applied to completed silicon heterojunction interdigitated back contact solar cells in order to lower contact resistance. Previously, the implementation of a-Si:H(i) at the electron contact of polycrystalline silicon solar cells on glass substrates led to an increase in series resistance. The cell architecture with the current record efficiency of 14.2% (with illumination through glass) utilizes only an a-Si:H(nt) layer (cid:0) 2 of short circuit current density is lost due to electrical shading under the electron contact and 2–2.9 mA cm [1,2]. The goal of implementing an a-Si:H(i) layer and laser firing at this contact is to achieve low contact resistance at fired spots while preserving a-Si:H(i) passivation in unfired regions. After the laser firing, VOC was (cid:0) 2 loss in JSC. In the best retained, while up to 14% absolute increase in FF was obtained with a mere 0.2 mA cm (cid:0) 2 loss in JSC. Two laser sources were used to first performing cell, a 72.1% FF was achieved with a 0.7 mA cm ablate a part of the silver contact metal, and then to laser fire through the Si(n)/a-Si:H(i/nt)/ITO/Ag contact. (cid:0) 2 (355 nm, picosecond pulse duration) and The optimal laser fluence was found to be 1.1–0.5 J cm (cid:0) 2 (532 nm, nanosecond pulse duration), respectively. The upper limit on specific contact resistance 4.4–5.2 J cm in the laser fired spots was calculated to be 38 ? 20 mΩcm2 as a conservative estimate.
关键词： Liquid phase crystallized silicon,Passivation,Interdigitated back contact,Foreign substrates,Laser fired contacts,Silicon heterojunction
更新于2025-09-23 15:19:57
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An optimized Graphene/4H-SiC/Graphene MSM UV-photodetector operating in a wide range of temperature
摘要： In this paper, .an accurate analytical model has been developed to optimize the performance of an Interdigitated Graphene Electrode/p-silicon carbide (IGE/p-4H-SiC) Metal semiconductor fitness function for the multi objective optimization (MOGA) approach. The optimized sensitivity and speed performances was executed. Our results confirm the excellent ability of the suggested Graphene electrode system to decrease the unwanted shadowing effect. A responsivity of 238 μA/W was obtained under 325-nm illumination compared to the 16.7 μA/W for the conventional Cr-Pd/p-SiC PD. A photocurrent to- dark-current ratio (PDCR) of 5.75 × 105 at 300K and 270 at 500K was distinguished. The response time was found to be around 14 μs at 300K and 54.5 μs at 500K. Furthermore, the developed model serves as a fitness function to recognize the IGE formalism pattern which permits the enhancement of the performance of the proposed Gr/4H-SiC IE MSM PD using MOGA-based technique. The achieved results indicate that the suggested design methodology not only permits to realize a superior compromise amid responsivity and response time, but also shed light on the proposed device’s ruggedness under high temperature conditions. This opens the way to realize ultra-sensitive, high-speed SiC optoelectronic devices for extremely high temperature applications.
关键词： Analytical Model,UV photodetector,Graphene,MOGA approach,4H-SiC,interdigitated electrodes
更新于2025-09-23 15:19:57
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Solar Cells || Review on Metallization in Crystalline Silicon Solar Cells
摘要： Solar cell market is led by silicon photovoltaics and holds around 92% of the total market. Silicon solar cell fabrication process involves several critical steps which affects cell efficiency to large extent. This includes surface texturization, diffusion, antireflective coatings, and contact metallization. Among the critical processes, metallization is more significant. By optimizing contact metallization, electrical and optical losses of the solar cells can be reduced or controlled. Conventional and advanced silicon solar cell processes are discussed briefly. Subsequently, different metallization technologies used for front contacts in conventional silicon solar cells such as screen printing and nickel/copper plating are reviewed in detail. Rear metallization is important to improve efficiency in passivated emitter rear contact cells and interdigitated back contact cells. Current models on local Al contact formation in passivated emitter rear contact (PERC) cells are reviewed, and the influence of process parameters on the formation of local Al contacts is discussed. Also, the contact mechanism and the influence of metal contacts in interdigitated back contact (IBC) cells are reviewed briefly. The research highlights on metallization of conventional screen printed solar cells are compared with PERC and IBC cells.
关键词： interdigitated back contact cells,silicon solar cells,passivated emitter rear contact cells,metallization,process flows
更新于2025-09-23 15:19:57
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Corrugation Enabled Asymmetrically Ultrastretchable (95%) Monocrystalline Silicon Solar Cells with High Efficiency (19%)
摘要： Stretchable solar cells are of growing interest due their key role in realizing many applications such as wearables and biomedical devices. Ultrastretchability, high energy-efficiency, biocompatibility, and mechanical resilience are essential characteristics of such energy harvesting devices. Here, the development of wafer-scale monocrystalline silicon solar cells with world-record ultrastretchability (95%) and efficiency (19%) is demonstrated using a laser-patterning based corrugation technique. The demonstrated approach transforms interdigitated back contacts (IBC) based rigid solar cells into mechanically reliable but ultrastretchable cells with negligible degradation in the electric performance in terms of current density, open-circuit voltage, and fill factor. The corrugation method is based on the creation of alternating grooves resulting in silicon islands with different shapes. The stretchability is achieved by orthogonally aligning the active silicon islands to the applied tensile stress and using a biocompatible elastomer (Ecoflex) as a stretchable substrate. The resulting mechanics ensure that the brittle silicon areas do not experience significant mechanical stresses upon asymmetrical stretching. Different patterns are studied including linear, diamond, and triangular patterns, each of which results in a different stretchability and loss of active silicon area. Finally, finite element method based simulation is conducted to study the generated deformation in the different patterned solar cells.
关键词： stretchable electronics,monocrystalline silicon,photovoltaics,interdigitated back contacts,corrugation
更新于2025-09-19 17:13:59
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High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter
摘要： Silicon interdigitated back contact (IBC) solar cells with front floating emitter (FFE-IBC) put forward a new carrier transport concept of “pumping effect” for minority carriers compared with traditional IBC solar cells with front surface field (FSF-IBC). Herein, high-performance FFE-IBC solar cells are achieved theoretically combining superior crystalline silicon quality, front surface passivation, and shallow groove structure using 2D device model. The improvement of minority carrier transport capacity is realized in the conductive FFE layer through optimizing the doping concentration and junction depth. It is shown that the shallow groove on the rear side of FFE-IBC solar cells can effectively enhance the carrier collection ability by means of minimizing the negative impact of undiffused gap or surface p–n junction. The high efficiency exceeding 25% can be realized on silicon FFE-IBC solar cells with the novel cell structure and optimized cell parameters, where the back surface field and emitter region width can be made for the same with only a slight sacrifice of photocurrent density and conversion efficiency. It is demonstrated theoretically that the realization of high-efficiency and low-cost silicon IBC solar cells is feasible due to the increase of the module fabrication tolerance.
关键词： shallow grooves,numerical simulations,high performance,front floating emitters,silicon interdigitated back contact solar cells
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Direct Laser Patterned Electroplated Copper Contacts for Interdigitated Back Contact Silicon Solar Cells
摘要： Laser patterning of seed layers for Cu electroplated interdigitated contacts on Ni/a-SiNx:H/Si substrates is presented. Damage was controlled by varying the laser conditions. Cu growths shorted the contacts due to conductive residues in the scribe lines, but were attenuated with pre-deposition etching yielding electrically-isolated plated fingers. Parasitically-plated Cu stripes were now observed in laser cuts, postulated due to Cu nucleation from high current densities at pinholes originating from laser and etch damage to the resistive a-SiNx:H. While a promising approach for contact processing, laser conditions must be carefully optimized to minimize substrate damage.
关键词： photovoltaic cells,interdigitated back contacts,copper electrodeposition,laser patterning,silicon
更新于2025-09-19 17:13:59