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Towards High Solar Cell Efficiency with Low Material Usage: 15% Efficiency with 14 ?μm Polycrystalline Silicon on Glass
摘要： This work showcases a bottom-up approach to creating silicon solar cells using a line-shaped laser. We report efforts to create thicker amorphous silicon passivation and contact layers as well as laser firing for low contact resistance. Collectively, a new in-house record efficiency of 15.1 % was achieved along with a clear pathway to reach 16 % efficiency with optimization of series resistance.
关键词： Foreign substrates,Liquid phase crystallized silicon,Passivation,Silicon Heterojunction Interdigitated back contact,Laser fired contacts
更新于2025-11-14 15:25:21
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A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact <i>in situ</i> with efficiencies close to 23%
摘要： We present a novel process sequence to simplify the rear‐side patterning of the silicon heterojunction interdigitated back contact (HJ IBC) cells. In this approach, interdigitated strips of a‐Si:H (i/p+) hole contact and a‐Si:H (i/n+) electron contact are achieved by partially etching a blanket a‐Si:H (i/p+) stack through an SiOx hard mask to remove only the p+ a‐Si:H layer and replace it with an n+ a‐Si:H layer, thereby switching from a hole contact to an electron contact in situ, without having to remove the entire passivation. This eliminates the ex situ wet clean after dry etching and also prevents re‐exposure of the crystalline silicon surface during rear‐side processing. Using a well‐controlled process, high‐quality passivation is maintained throughout the rear‐side process sequence leading to high open‐circuit voltages (VOC). A slightly higher contact resistance at the electron contact leads to a slightly higher fill factor (FF) loss due to series resistance for cells from the partial etch route, but the FF loss due to J02‐type recombination is lower, compared with reference cells. As a result, the best cell from the partial etch route has an efficiency of 22.9% and a VOC of 729 mV, nearly identical to the best reference cell, demonstrating that the developed partial etch process can be successfully implemented to achieve cell performance comparable with reference, but with a simpler, cheaper, and faster process sequence.
关键词： interdigitated back contact (IBC),H2 plasma,amorphous silicon,heterojunction,dry etch,process simplification,NF3/Ar plasma,in situ processing
更新于2025-09-23 15:23:52
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Solar Cells || Review on Metallization in Crystalline Silicon Solar Cells
摘要： Solar cell market is led by silicon photovoltaics and holds around 92% of the total market. Silicon solar cell fabrication process involves several critical steps which affects cell efficiency to large extent. This includes surface texturization, diffusion, antireflective coatings, and contact metallization. Among the critical processes, metallization is more significant. By optimizing contact metallization, electrical and optical losses of the solar cells can be reduced or controlled. Conventional and advanced silicon solar cell processes are discussed briefly. Subsequently, different metallization technologies used for front contacts in conventional silicon solar cells such as screen printing and nickel/copper plating are reviewed in detail. Rear metallization is important to improve efficiency in passivated emitter rear contact cells and interdigitated back contact cells. Current models on local Al contact formation in passivated emitter rear contact (PERC) cells are reviewed, and the influence of process parameters on the formation of local Al contacts is discussed. Also, the contact mechanism and the influence of metal contacts in interdigitated back contact (IBC) cells are reviewed briefly. The research highlights on metallization of conventional screen printed solar cells are compared with PERC and IBC cells.
关键词： interdigitated back contact cells,silicon solar cells,passivated emitter rear contact cells,metallization,process flows
更新于2025-09-23 15:19:57
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Laser firing in silicon heterojunction interdigitated back contact architecture for low contact resistance
摘要： This work reports a laser firing technique applied to completed silicon heterojunction interdigitated back contact solar cells in order to lower contact resistance. Previously, the implementation of a-Si:H(i) at the electron contact of polycrystalline silicon solar cells on glass substrates led to an increase in series resistance. The cell architecture with the current record efficiency of 14.2% (with illumination through glass) utilizes only an a-Si:H(nt) layer (cid:0) 2 of short circuit current density is lost due to electrical shading under the electron contact and 2–2.9 mA cm [1,2]. The goal of implementing an a-Si:H(i) layer and laser firing at this contact is to achieve low contact resistance at fired spots while preserving a-Si:H(i) passivation in unfired regions. After the laser firing, VOC was (cid:0) 2 loss in JSC. In the best retained, while up to 14% absolute increase in FF was obtained with a mere 0.2 mA cm (cid:0) 2 loss in JSC. Two laser sources were used to first performing cell, a 72.1% FF was achieved with a 0.7 mA cm ablate a part of the silver contact metal, and then to laser fire through the Si(n)/a-Si:H(i/nt)/ITO/Ag contact. (cid:0) 2 (355 nm, picosecond pulse duration) and The optimal laser fluence was found to be 1.1–0.5 J cm (cid:0) 2 (532 nm, nanosecond pulse duration), respectively. The upper limit on specific contact resistance 4.4–5.2 J cm in the laser fired spots was calculated to be 38 ? 20 mΩcm2 as a conservative estimate.
关键词： Liquid phase crystallized silicon,Passivation,Interdigitated back contact,Foreign substrates,Laser fired contacts,Silicon heterojunction
更新于2025-09-23 15:19:57
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High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter
摘要： Silicon interdigitated back contact (IBC) solar cells with front floating emitter (FFE-IBC) put forward a new carrier transport concept of “pumping effect” for minority carriers compared with traditional IBC solar cells with front surface field (FSF-IBC). Herein, high-performance FFE-IBC solar cells are achieved theoretically combining superior crystalline silicon quality, front surface passivation, and shallow groove structure using 2D device model. The improvement of minority carrier transport capacity is realized in the conductive FFE layer through optimizing the doping concentration and junction depth. It is shown that the shallow groove on the rear side of FFE-IBC solar cells can effectively enhance the carrier collection ability by means of minimizing the negative impact of undiffused gap or surface p–n junction. The high efficiency exceeding 25% can be realized on silicon FFE-IBC solar cells with the novel cell structure and optimized cell parameters, where the back surface field and emitter region width can be made for the same with only a slight sacrifice of photocurrent density and conversion efficiency. It is demonstrated theoretically that the realization of high-efficiency and low-cost silicon IBC solar cells is feasible due to the increase of the module fabrication tolerance.
关键词： shallow grooves,numerical simulations,high performance,front floating emitters,silicon interdigitated back contact solar cells
更新于2025-09-19 17:13:59
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Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology
摘要： In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 × 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm2, and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (τ bulk ≥ 10 ms) or low resistivity (ρ ≤ 1 Ω·cm) are used. The light I–V curve was fully characterized with the optical and electronic properties obtained from independent measurements.
关键词： passivated emitter and rear cell (PERC),Interdigitated-back-contact cell (IBC)
更新于2025-09-16 10:30:52
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Selective seed layer patterning of PVD metal stacks by electrochemical screen printing for solar cell applications
摘要： A proof of principle for electrochemical screen printing (ESP) as a patterning process for thin metal stacks that can be employed, eg, in interdigitated back contact (IBC) or silicon heterojunction (SHJ) solar cells, is demonstrated. By using the ESP process, a 125 × 125‐mm2 interdigitated back contact grid was successfully patterned into a 100‐nm physical vapor deposited (PVD) aluminum layer. Optimizations of the ESP process were performed to improve the patterning resolution. Rectangular trenches with a mean width of 36 ± 5 μm could be demonstrated on a 100‐nm–thick aluminum layer. Up to now, ESP can be applied to PVD aluminum, copper, or stacks of both materials. Finally, metal stacks of aluminum and copper were structured, which allow a more homogeneous current distribution for the ESP process and additionally for the subsequent copper electroplating because of the second metal layer underneath the layer to be structured. The successful transfer from wafer substrate to polymer foils increases the application options of ESP technology enormously, where the topography of the surface to be structured affects the printing results.
关键词： silicon,screen printing,flexible circuit board,plating,interdigitated back contact (IBC) solar cell,electrochemical etching,water‐based printing paste,Al/Cu stack
更新于2025-09-16 10:30:52
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Hard mask processing of 20% efficiency back-contacted silicon solar cells with dopant-free heterojunctions
摘要： Single junction crystalline silicon (c-Si) solar cells featuring a conventionally doped interdigitated back contact heterojunction (IBC-SHJ) structure has approached a record efficiency of 26.6%, which is very close to the practical limit. However, integrating the interdigital p- and n-type amorphous silicon (a-Si:H) layers on the rear surface of Si substrate is of such complexity, posing problem of heavy dependences on expensive manufacturing techniques including plasma-enhanced chemical vapor deposition and photolithography. Its commercial potential is thus always being questioned, and to seek an alternative fabrication procedure, which adapts to cost-effective deposition parallel with simple patterning characteristics, has been a primary research target of related subjects. Here, we demonstrated 20.1% efficiency dopant-free IBC-SHJ solar cells by combining evaporated carrier-selective materials (MoOx and LiFx) and two-steps hard masks alignments, delivering substantial simplifications in the architecture and fabrication procedures. We investigated the effect of intrinsic a-Si:H films with different thicknesses on the passivation and contact resistance for both a-Si:H/MoOx and a-Si:H/LiFx contacts, showing 4 nm a-Si:H is better for high efficiency IBC-SHJ solar cells. We also found that the position of the metal target (electrode definition step) and isolation in between the busbar and the Si substrate are highly relevant to leakage and recombination and have great impact on the device performance. The dopant-free IBC-SHJ solar cells demonstrated here manifest enough confidence in our hard mask based fabrication procedure, with great potential for high performance-to-cost ratio in future.
关键词： solar cells,dopant-free,interdigitated back contact,silicon,carrier-selective,contacts,heterojunction
更新于2025-09-12 10:27:22