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Interaction between powder particle and gas-liquid interface of the melt pool during laser solid forming process
摘要： The three-dimensional (3-D) simulation of powder particle entering melt pool during laser solid forming (LSF) was carried out in our quest to establish a general representative model of this phenomenon. The effect of the gas-liquid interface on the motion state of the powder was analyzed, and the accuracy and universality of the model were verified using a high-speed photographic experimental approach. Further, the simulation process of the Ti-6Al-4V powder particle entering the high-temperature Ti-6Al-4V melt pool was carried out. The effects of the gas-liquid interface of the melt pool on the motion state of the powder particle and the disturbing of the powder particle on the melt pool were studied. It was found that the running speed of the particle experienced a rapid decrease and then a slower decrease in the process of entering the pool. Also, the particle serves as a transport medium of gases and carries the gases into the pool, which could form pores in the deposited layer. When the particles enter the melt pool at varied speeds, the ratio of the instantaneous speed of the particle entering the pool to the initial incident speed differs, which increases with increasing initial speed.
关键词： Melt pool,Laser solid forming,Powder particle,Gas-liquid interface,Interaction
更新于2025-09-23 15:19:57
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Highly efficient photoelectrochemical water oxidation enabled by enhanced interfacial interaction in 2D/1D In2S3@Bi2S3 heterostructures
摘要： Van der Waals (vdW) heterostructures have received tremendous attention in low dimensional semiconductors due to interfacial surface reconstruction and electronic coupling effects. Here, we report mixed-dimensional 2D/1D In2S3@Bi2S3 heterostructures synthesized via two-step solvothermal in-situ growth. Theoretical calculations demonstrate In2S3 nanosheets and Bi2S3 nanorods are integrated together through the vdW interaction. Through theoretical calculations and experiment, the results confirm the surface potential of Bi2S3 is higher than In2S3, implying the free electrons will flow from Bi2S3 to In2S3 when the two semiconductors contact, leading to electron’s and hole’s accumulation at In2S3 and Bi2S3 surface. This redistribution of charges will induce an outward vector of built-in electric field at the In2S3@Bi2S3 interface (from Bi2S3 to In2S3), thereby improving hole’s transfer to In2S3 and electron’s transfer to Bi2S3. The advanced heterostructure aids in shortening the photogenerated electrons’ transport time (14 μs), promoting the electron-hole’s separation, and presents 13.3-fold enhancement in photocurrent density when compared to In2S3.
关键词： water oxidation,photoelectrochemical,interface interaction,In2S3@Bi2S3,heterostructure
更新于2025-09-23 15:19:57