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Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel-Poon model
摘要： A large signal analysis method based on Gummel‐Poon model is proposed to predict nonlinear behavior of InGaP/GaAs HBT. A 2 × 20 μm2 transistor is fabricated with InGaP/GaAs HBT technology. The large signal transconductance Gm, conductance Gbe, and capacitance CBE, CBC are calculated based on the proposed method and measured using a RF testing probe. The calculated and measured results show good consistency up to nonlinear power level. The proposed method is applied to analyze variations of nonlinear large signal intrinsic elements of this transistor with increasing power under different bias conditions, in order to raise benefit of nonlinear consideration for power amplifiers.
关键词： Gummel‐Poon,nonlinear,large signal model,GaAs HBT
更新于2025-09-23 15:23:52
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[IEEE 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics) - Omsk, Russia (2018.11.13-2018.11.15)] 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics) - Automatic Nonlinear Modeling Technique for Gaas HEMT
摘要： A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of nonlinear capacitances is described. A 0.15um GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multi-bias S-parameters and power characteristics.
关键词： compact nonlinear model,microwave transistor,large-signal model,GaAs HEMT
更新于2025-09-23 15:22:29