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Organic and hybrid organic-inorganic flexible optoelectronics: Recent advances and perspectives
摘要： Extensive research in flexible optoelectronics, based on organic and organic-inorganic materials, has proven a leading topic because of their superior advantages in solution process-ability, large-area and cost-efficient fabrication. What matters most in the fabrication quality of optoelectronic devices are the materials, optimization of device structures, and manufacturing processe. The materials exhibit great merits, such as power conversion efficiencies (PCEs) for photovoltaic technology or charge mobilities for field effect transistors. Herein, we summarized the recent literature pertaining to materials in the application area of large-scale roll-to-roll (R2R) processable, 3D printed flexible electronics and optoelectronics.
关键词： Large area,Flexible optoelectronics,3D printed,Solution process-ability,Roll-to-roll
更新于2025-09-11 14:15:04
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Large-area near-infrared perovskite light-emitting diodes
摘要： The performance of perovskite light-emitting diodes (PeLEDs) has progressed rapidly in recent years, with electroluminescence efficiency now reaching 20%. However, devices, so far, have featured small areas and usually show notable variation in device-to-device performance. Here, we show that the origin of suboptimal device performance stems from inadequate hole injection, and that the use of a hole-transporting polymer with a shallower ionization potential can improve device charge balance, efficiency and reproducibility. Using an ITO/ZnO/PEIE/FAPbI3/poly-TPD/MoO3/Al device structure, we report a 799 nm near-infrared PeLED that operates with an external quantum efficiency (EQE) of 20.2%, at a current density of 57 mA cm?2 and a radiance of 57 W sr?1 m?2. The standard deviation in the device EQE is only 1.2%, demonstrating high reproducibility. Large-area devices measuring 900 mm2 operate with a high EQE of 12.1%, and are shown to suit medical applications such as subcutaneous deep-tissue illumination and heart rate monitoring.
关键词： near-infrared,hole injection,medical applications,perovskite light-emitting diodes,large-area
更新于2025-09-11 14:15:04
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17% efficiency organic photovoltaic cell with superior processability
摘要： The development of organic photoactive materials, especially the new-emerging non-fullerene electron acceptors (NFAs), has enabled rapid progress in organic photovoltaic (OPV) cells in recent years. Although the power conversion efficiencies (PCEs) of the top-performance OPV cells have surpassed 16%, the devices are usually fabricated via a spin-coating method and are not suitable for large-area production. Here, we demonstrate that the fine-modification of the flexible side chains of NFAs can yield 17% PCE for OPV cells. More crucially, as the optimal NFA has a suitable solubility and thus a desirable morphology, the high efficiencies of spin-coated devices can be maintained when using the scalable blade-coating processing technology. Our results suggest that the optimization of the chemical structures of the OPV materials can improve the device performance. This has great significance in larger-area production technologies that provide important scientific insights for the commercialization of OPV cells.
关键词： non-fullerene acceptor,processability,power conversion efficiency,organic photovoltaic cells,scalable large-area production
更新于2025-09-11 14:15:04
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Nucleation promoted synthesis of large-area ReS<sub>2</sub> film for high-speed photodetectors
摘要： Rhenium disulfide (ReS2) is a transition metal dichalcogenide with a layer-independent direct bandgap. Notably, the weak interlayer coupling owing to its T-phase structure enables multi-layer ReS2 to behave similarly to decoupled monolayers. This inherent characteristic makes continuous multi-layer ReS2 film a unique platform for large-area electronic applications. To date, the bulk of work on ReS2 has been conducted using mechanically exfoliated samples or small size flakes (< 1mm2) with no potential for large-scale electronics. A chemical vapor deposition (CVD) synthesis of a large area, continuous ReS2 film directly on a SiO2 substrate is also known to be more challenging compared with that of other 2D materials, such as MoS2 and WS2. This is partly due to its tendency to grow into discrete dendritic structures. In this study, a large-area (> 1 cm2), continuous multilayer ReS2 film is directly synthesized on a SiO2 substrate without any transfer process. The polycrystalline ReS2 film synthesized by this method exhibits one of the fastest photoresponse speeds (0.03 s rise time and 0.025 s decay time) among the reported CVD films. The responsivity Rλ was also the highest among large-area CVD films. The synthesis method for a continuous multilayer ReS2 film is amenable to large-scale integration and will pave the way for practical optoelectronic applications based on 2D layered materials.
关键词： Photodetector,Large-area synthesis,Metal chalcogenides,Chemical vapor deposition,Two-dimensional material,Nucleation promotor
更新于2025-09-11 14:15:04
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Enabling thin-film transistor technologies and the device metrics that matter
摘要： The field-effect transistor kickstarted the digital revolution that propelled our society into the information age. One member of the now large family of field-effect devices is the thin-film transistor (TFT), best known for its enabling role in modern flat-panel displays. TFTs can be used in all sorts of innovative applications because of the broad variety of materials they can be made from, which give them diverse electrical and mechanical characteristics. To successfully utilize TFT technologies in a variety of rapidly emerging applications, such as flexible, stretchable and transparent large-area microelectronics, there are a number of metrics that matter.
关键词： field-effect transistor,digital revolution,flexible electronics,large-area microelectronics,thin-film transistor,stretchable electronics,flat-panel displays,TFT,transparent electronics
更新于2025-09-04 15:30:14
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Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD
摘要： We present n‐type bifacial solar cells with a rear interfacial SiOx/n+:poly‐Si passivating contact (‘monoPoly’ cells) where the interfacial oxide and n+:poly‐Si layers are fabricated using an industrial inline plasma‐enhanced chemical vapor deposition (PECVD) tool. We demonstrate outstanding passivation quality with dark saturation current density (J0) values of approximately 3 fA/cm2 and implied open‐circuit voltage (iVoc) of 730 mV at 1‐sun conditions after firing in an industrial belt furnace. Using a simple solar cell process flow that can be easily adapted for mass production, a peak cell efficiency of 22.8% with a cell open circuit voltage (Voc) of 696 mV is achieved on large‐area, screen‐printed, Czochralski‐silicon (Cz‐Si) solar cells using commercial fire‐through metal pastes.
关键词： silicon wafer,screen‐printed,industrial process,passivated contacts,industrial firing,PECVD,solar cells,large‐area
更新于2025-09-04 15:30:14
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Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin-Film Circuitry for Low-Cost Wireless Energy Harvesting
摘要： Direct additive fabrication of thin-film electronics using a high-mobility, wide-bandgap amorphous oxide semiconductor (AOS) can pave the way for integration of efficient power circuits with digital electronics. For power rectifiers, vertical thin-film diodes (V-TFDs) offer superior efficiency and higher frequency operation compared to lateral thin-film transistors (TFTs). However, the AOS V-TFDs reported so far require additional fabrication steps and generally suffer from low voltage handling capability. Here, these challenges are overcome by exploiting in situ reactions of molybdenum (Mo) during the solution-process deposition of amorphous zinc tin oxide film. The oxidation of Mo forms the rectifying contact of the V-TFD, while the simultaneous diffusion of Mo increases the diode’s voltage range of operation. The resulting V-TFDs are demonstrated in a full-wave rectifier for wireless energy harvesting from a commercial radio-frequency identification reader. Finally, by using the same Mo film for V-TFD rectifying contacts and TFT gate electrodes, this process allows simultaneous fabrication of both devices without any additional steps. The integration of TFTs alongside V-TFDs opens a new fabrication route for future low-cost and large-area thin-film circuitry with embedded power management.
关键词： additive fabrication,amorphous oxide semiconductors,thin-film circuitry,large-area electronics,solution process
更新于2025-09-04 15:30:14