Bifacial p-Type PERC Solar Cell with Efficiency over 22% Using Laser Doped Selective Emitter

摘要： In this paper, we report one bifacial p-type PERC solar cell with e?ciency over 22% using laser doped selective emitter produced in larger-scale commercial line on 6-inch mono-crystalline wafer. On front side of the solar cell, square resistance of p-n junction was found to be closely related with laser power at certain laser scan speed and frequency. On the other side, the rear ?ngers with di?erent ratios of height and width and rear silicon nitride (SiNx) layer with di?erent thickness were optimized, and a highest rear e?ciency of the bifacial solar cell was obtained. Finally, bifacial silicon solar cells with the front and rear e?ciencies exceeding 22% and 15% (AM1.5, 1000 W/m2, 25 C) were successfully achieved, respectively.