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[IEEE 2019 International 3D Systems Integration Conference (3DIC) - Sendai, Japan (2019.10.8-2019.10.10)] 2019 International 3D Systems Integration Conference (3DIC) - Development of Laser-Assisted Bonding with Compression (LABC) Process for 3D IC Integration
摘要： Laser-Assisted Bonding with Compression (LABC) technology with NCF was proposed to accomplish the productivity and process reliability at the same time. A quartz block as a header was used to deliver a pressure to the devices because of its extremely low absorption of the laser during the bonding process. Newly developed NCF for LABC was designed to have stability on a hot stage and to show solder wetting and fast curing with no void and optimal fillet during the LABC bonding process. As the laser is used as a heat source, the uniform heat should be provided on each interconnection without any damages on chip or a substrate. 780μm-thick daisy chain top and bottom chips with the minimum pitch of 30μm and bump number of about 27,000 were successfully bonded using the LABC and NCF film.
关键词： throughput,non-conductive film,laser-assisted bonding,bonding performance,TCB,thermal compression bonding,NCF,LABC,compression
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2019.5.28-2019.5.31)] 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Vertical Laser Assisted Bonding for Advanced "3.5D" Chip Packaging
摘要： In this work the processes of laser assisted bonding (LAB) is compared to thermal compression bonding (TCB). Their respective advantages and disadvantages regarding the assembly of flip chip stacks are compared. It is found, that the LAB allows for faster processing, negligible compression force and creates less internal stress in the chip stack. The concept of “3.5D” stacking is introduced. This new concept allows for the vertical bonding of chips/semiconductors to the sides of a chip stack. The vertically bonded parts can be used to contact the layers, which eliminates the individual necessity for through silicon vias (TSVs).
关键词： 3D-packaging,Silicon interposer,Thermal compression bonding (TCB),Inter metallic phase (IMC-layer),Laser assisted bonding (LAB),System on Package (SOP),Laser beam modulation,vertical Flip Chip bonding
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2019.5.28-2019.5.31)] 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Enhanced Performance of Laser-Assisted Bonding with Compression (LABC) Compared with Thermal Compression Bonding (TCB) Technology
摘要： A LABC (Laser-Assisted Bonding with Compression) bonder and NCF (Non-Conductive Film) were developed to increase the productivity of the bonding process for the advanced microelectronic packaging technology. The design features of a LABC make its UPH above 1,000. The NCF was applied to both of LAB and TCB (Thermal Compression Bonding Technology). The 780μm-thick daisy chain top and bottom chips with the minimum pitch of 30μm and bump number of about 27,000 were prepared and tested to verify the LABC and NCF technology. The effects of the laser power on the joints quality after the LABC bonding process were investigated and compared with the joints formed by the TCB technology. Finally, the SAT (Scanning Acoustic Tomography) images of the test vehicles before and after the TCO (Pressurized oven) were observed to check the voids in the NCF after the LABC bonding process.
关键词： thermal compression bonding (TCB),bonding performance,non-conductive film (NCF),throughput,laser-assisted bonding with compression (LABC)
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2019.5.28-2019.5.31)] 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - 7nm Chip-Package Interaction Study on a Fine Pitch Flip Chip Package with Laser Assisted Bonding and Mass Reflow Technology
摘要： Due to the rapid growth in new technological features in mobile applications, new packaging solutions smaller form factor package designs, lower power consumption and other efficiency enhancements are required for the 7nm node silicon devices. Flip chip technology such as fcCSP (flip chip Chip Scale Package) has been widely adopted as the primary (or preferred) solution for mobile devices to satisfy these challenging requirements. The flip chip CSP package offers a cost-effective solution through the combination of Sn/Ag bumped copper (Cu) pillars, the use embedded trace substrate (ETS) technology along with mass reflow chip attach and molded underfill (MUF) processes.. While mass reflow chip attach process provides a cost-effective solution for flip chip assembly, there is nonetheless a high risk of bump to trace shorting especially as the need increases for finer bump pitch designs, with reduced copper line width and line spacing (LW/LS) for the escaped traces. To reduce this risk, we are exploring the use of laser assisted bonding (LAB) methodology to study the 7nm chip-package interaction (CPI) of a fcCSP with a 60μm bump pitch and escaped trace designs in this paper. For the purpose of measuring the extremely low-k (ELK) performance in a 14x14mm fine pitch fcCSP with 7nm node silicon live die, the thunder test, two-times mass reflow followed by a quick temperature cycling (QTC), and the hammer test, a multi-reflow process with a peak temperature of 260°C have been utilized. The results show that although both chip attach methodologies can pass the normal requirements of the thunder and hammer tests, the utilization of LAB technology can further enhance the strength of ELK, resulting in better yield performance. From these results, we believe that LAB not only can guarantee assembly yield but also ensure less ELK damage risk in the evaluated 7nm node silicon fcCSP. Futhermore we have shown that LAB technology is suitable for the 7nm node silicon devices along with the bump pitch reduction using finer LW/LS substrate with escaped traces design.
关键词： 7nm silicon node,chip-package interaction,laser assisted bonding,quick temperature cycling test,mass reflow,embedded trace substrate,hammer test
更新于2025-09-11 14:15:04
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Development and optimization of the laser-assisted bonding process for a flip chip package
摘要： In a ?ne pitch ?ip chip package, a laser-assisted bonding (LAB) technology has recently been developed to overcome several reliability and throughput issues in the conventional mass re?ow (MR) and thermal compression bonding technology. This study investigated the LAB process for a ?ip chip package with a copper (Cu) pillar bump using numerical heat transfer and thermo-mechanical analysis. During the LAB process, the temperature of the silicon die was uniform across the entire surface and increased to 280 (cid:3)C within a few seconds; this was high enough to melt the solder. The heat in the die was quickly conducted to the substrate through the Cu pillar bumps. Meanwhile, the substrate temperature was low and remained constant. Therefore, a stable solder interconnection was quickly achieved with minimal stress and thermal damage to the package. The substrate thickness, the number of Cu bumps, and the bonding stage temperature were found to be important factors affecting the heat transfer behavior of the package. The temperature of the die decreased when a thinner substrate, a higher number of Cu bumps, and a lower bonding stage temperature were used. If the temperature of the die was not suf?ciently high, insuf?cient heat was transferred to the solder to melt it, resulting in incomplete solder joint formation. Thermo-mechanical analysis also showed that the LAB process produced lower warpage and thermo-mechanical strain than the conventional MR process. These results indicated that a LAB process using a selective local heating method would be bene?cial in reducing thermo-mechanical stress and increasing throughput for the ?ne pitch ?ip chip packages.
关键词： Laser-assisted bonding,Copper pillar bump,Thermo-mechanical analysis,Flip chip package,Heat transfer
更新于2025-09-11 14:15:04