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[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Tunable WSe <sub/>2</sub> phototransistor enabled by electrostatically doped lateral p-n homojunction
摘要： This study demonstrates an approach to tune the responsivity and detectivity of a WSe2 phototransistor by incorporating an electrostatically doped lateral p-n junction in the form of side gates to the transistor channel. The resulting decrease in dark current and enhancement in photocurrent by externally injected carriers into the conduction channel leads to improved photodetection with a fast response time (τ).
关键词： photodetection,phototransistor,lateral p-n junction,electrostatic doping,WSe2
更新于2025-09-23 15:21:01
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High-performance lateral MoS2-MoO3 heterojunction phototransistor enabled by in-situ chemical-oxidation; ??????????-|?°§????????oé????§è??MoS2-MoO3é?￠??????è′¨??? è′¨??????????????????;
摘要： Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors, which have great potential in the applications of next-generation integrated circuit and optoelectronic devices. Hence, a controlled and facile method to achieve p-n interface is desired. Molybdenum sulfide (MoS2) has shown promising potential as an atomic-layer n-type semiconductor in electronics and optoelectronics. Here, we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization process. The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior, with a maximum external quantum efficiency of ~650%, ~3.6 mA W?1 at 0 V, and a light switching ratio of ~102. The importance of the built-in p-n junction with such a high performance is further confirmed by high-resolution photocurrent mapping. Due to the high photoresponse at low source-drain voltage (VDS) and gate voltage (VG), the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic circuits. Our findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics, optoelectronics and CMOS logic circuits.
关键词： optoelectronics,lateral p-n junction,molybdenum disulfide,photocurrent
更新于2025-09-23 15:19:57
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Lateral InSe p–n Junction Formed by Partial Doping for Use in Ultrathin Flexible Solar Cells
摘要： Two-dimensional InSe possesses good electrical conductivity, intrinsic and structural flexibility, high chemical stability, and a tunable band gap, enabling it to be a promising candidate for flexible and wearable solar cells. Here we construct a lateral p?n junction by partially doping molybdenum trioxide (MoO3) at the surface of the InSe monolayer. Our density functional theory calculations reveal that the strong hybridization between MoO3 and InSe induces a lateral built-in electric field in the partially doped substrate and promotes the effective separation of carriers. Under a large range of external stains, the doped InSe can maintain the direct band gap, and the lateral structure device exhibits power conversion efficiencies over 5% and high carrier mobility around 1000 cm2 V?1 s?1. In particular, a power conversion efficiency of 20.7% can be achieved with 10% compressive strain. The partially doped InSe monolayer is expected to be used as an ultrathin flexible solar cell.
关键词： lateral p?n junction,density functional theory,carrier mobility,flexible solar cells,power conversion efficiency,Two-dimensional InSe,molybdenum trioxide
更新于2025-09-11 14:15:04