- 标题
- 摘要
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- 实验方案
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Enhancement of dopant solubility in compound semiconductors during crystal growth
摘要： Doping of semiconductors is a process of intentionally incorporating impurity into the materials to adjust and optimize the electrical properties during the processing of semiconductors. The doping level has certain upper limit, which is usually corresponding to the solubility of the dopant in the host material under processing conditions. Sometimes, the maximum solubility level is still not high enough to provide the desired opto-electronic properties and a higher doping level is needed. Hence, enhancing the dopant level is one of the critical issues in the semiconductor industry, especially for those advanced devices made from compound semiconductors, including binary, ternary, as well as multi-component compounds. In this report, we designed a processing method, by simply varying a processing parameter during melt growth, to increase the doping level in the compound semiconductors well above the maximum values obtained under otherwise regular processing procedures and demonstrated it in the melt growth of Cl-doped PbTe.
关键词： Dopant,Lead telluride,Directional solidification,Solubility
更新于2025-09-23 15:21:21
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A Lattice-mismatched PbTe/ZnTe Heterostructure with High-speed Mid-infrared Photoresponses
摘要： In this work, a novel heterostructure consisting of di?erent lattice structures with zincblende ZnTe and rock-salt PbTe is proposed. The PbTe/ZnTe heterostructures are grown by molecular beam epitaxy. Type-I band alignment at the PbTe/ZnTe heterointerface is revealed by X-ray photoelectron spectroscopy. The interface of the heterostructure exhibits exotic electrical properties. The novel heterostructure is then implemented to develop high-performance mid-infrared photodetectors which demonstrate pronounced responsivity, swift response speed and high detectivity. The new photodetectors utilize the lateral photovoltaic e?ect which facilitates the understanding of the novel PbTe/ZnTe heterostructures.
关键词： mid-infrared detectors,fast photoresponse,lead telluride,lateral photovoltaic e?ect,semiconductor heterostructures
更新于2025-09-12 10:27:22