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Metastable Behavior on Cesium Fluoridea??Treated Cu(In <sub/> 1a?? <i>x</i> </sub> ,Ga <sub/><i>x</i> </sub> )Se <sub/>2</sub> Solar Cells
摘要： Metastable behavior of cesium fluoride (CsF)-treated Cu(In1–x,Gax)Se2 (CIGS) solar cells is investigated under heat-light soaking (HLS) and heat-soaking (HS) treatments. HLS increases open-circuit voltage, fill factor, efficiency, and net carrier concentration and decreases short-circuit current density, whereas heat-soaking treatment acts oppositely. The performance of a CsF postdeposition treatment to CIGS thin film in selenium vapor, and closer to stoichiometry copper content, did not mitigate the open-circuit voltage improvement after HLS. These results argue the traditional concept of the VSe–VCu divacancy complex for the total beneficial effect of HLS in alkali-treated CIGS solar cells. The metastable behavior observed in the CsF-treated devices due to the HLS and HS treatments is explained by the specific behavior of alkali-containing new compounds at the surface and/or the migration of alkali metals at the surface and bulk regions.
关键词： heat soaking,heat-light soaking,metastable behavior,high efficiency,CsF-postdeposition treatment
更新于2025-09-23 15:19:57
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Short-term light soaking effect on dye-sensitized solar cells
摘要： Dye-sensitized solar cells (DSSCs) are one of the most promising third generation solar cells and have been regarded as a competitive alternative to the conventional silicon-based photovoltaic devices due to their relatively low production cost. Light soaking effect is an intriguing phenomenon that exists in DSSCs, which refers to the enhancement of the electrical parameters in the cells after being exposed to light soaking. In this paper, we report on the variation in the electrical parameters of DSSCs under continuous exposure to a simulated solar irradiation for a period up to 6h. Increments of Jsc and Voc in DSSC were observed after 6h of light soaking, which led to improved efficiency from 3.87% to 4.50%. The improvements may be ascribed to the formation of electron trapping states below the TiO2 conduction band edge, which facilitated the charge carrier transport.
关键词： electrical parameters,TiO2 conduction band,Dye-sensitized solar cells,efficiency,light soaking effect
更新于2025-09-23 15:19:57
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Doping Strategy for Efficient and Stable Triple Cation Hybrid Perovskite Solar Cells and Module Based on Poly(3‐hexylthiophene) Hole Transport Layer
摘要： As the hole transport layer (HTL) for perovskite solar cells (PSCs), poly(3-hexylthiophene) (P3HT) has been attracting great interest due to its low-cost, thermal stability, oxygen impermeability, and strong hydrophobicity. In this work, a new doping strategy is developed for P3HT as the HTL in triple-cation/double-halide ((FA1?x?yMAxCsy)Pb(I1?xBrx)3) mesoscopic PSCs. Photovoltaic performance and stability of solar cells show remarkable enhancement using a composition of three dopants Li-TFSI, TBP, and Co(III)-TFSI reaching power conversion efficiencies of 19.25% on 0.1 cm2 active area, 16.29% on 1 cm2 active area, and 13.3% on a 43 cm2 active area module without using any additional absorber layer or any interlayer at the PSK/P3HT interface. The results illustrate the positive effect of a cobalt dopant on the band structure of perovskite/P3HT interfaces leading to improved hole extraction and a decrease of trap-assisted recombination. Non-encapsulated large area devices show promising air stability through keeping more than 80% of initial efficiency after 1500 h in atmospheric conditions (relative humidity ≈ 60%, r.t.), whereas encapsulated devices show more than >500 h at 85 °C thermal stability (>80%) and 100 h stability against continuous light soaking (>90%). The boosted efficiency and the improved stability make P3HT a good candidate for low-cost large-scale PSCs.
关键词： perovskite interfaces,light soaking,photovoltaic module,polymeric hole transport materials,thermal stability
更新于2025-09-19 17:13:59
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Light soaking effect driven in porphyrin dye-sensitized solar cells using 1D TiO2 nanotube photoanodes
摘要： Light soaking (LS) effect on porphyrin (GD2) dye-sensitized solar cells (DSSCs) using well-ordered TiO2 nanotube (TNT) photoanodes was studied with different lengths of TNTs and LS treatment time. The TNT array possessing longer length and larger tube diameter had improved photoelectrochemical (PEC) property by generating larger photocurrent, and besides provided a larger surface area to yield more dye loading. The LS effect on GD2-applied DSSCs using TNT photoanodes was triggered off in the first 5 min of the LS treatment, and gradually increased during 60 min LS treatment. The improved PEC property and dye loading by longer TNT array (22 μm) led to the noticeable enhancement rate of power conversion efficiency from 0.7% to 1.88% (168 % increase) after 60 min LS treatment, which was more prominent compared to the enhancement of GD2-applied DSSCs using mesoporous TiO2 films. Especially, morphological property of well-ordered 1D TNT photoanodes offers more spaces to facilitate the cation exchange in electrolyte system, leading to enhancing electron injection and reducing recombination under the LS condition. Electrochemical impedance spectroscopy (EIS) results confirmed the contribution of well-aligned 1D TNT structure to significant LS effect in GD2-applied DSSCs.
关键词： anodization,TiO2 nanotube,Photoelectrode,Porphyrin,Light soaking,Dye-sensitized solar cells
更新于2025-09-19 17:13:59
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Antimony doped tin oxide/polyethylenimine electron selective contact for reliable and light soaking-free high performance inverted organic solar cells
摘要： We have demonstrated a high-performance low temperature solution processed electron selective contact consisting of 10 at. % antimony doped tin oxide (ATO) and the neutral polymer polyethylenimine (PEI). Inverted organic photovoltaics (OPVs) utilizing ATO/PEI as electron selective contact exhibited high power conversion efficiencies for both the reference P3HT:PCBM and the nonfullerene based P3HT:IDTBR active layer OPV material systems. Importantly, it is shown that the proposed ATO/PEI carrier selective contact provides light soaking-free inverted OPVs. Furthermore, by increasing the thickness of the ATO layer from 40 to 120 nm, the power conversion efficiency of the corresponding inverted OPVs remain unaffected, a parameter which indicates the potential of the proposed ATO/PEI carrier selective contact for high performance light-soaking-free and reliable roll-to-roll printing solutions processed inverted OPVs.
关键词： inverted organic solar cells,antimony doped tin oxide,polyethylenimine,light soaking-free,electron selective contact
更新于2025-09-12 10:27:22
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Visualizing the Impact of Light Soaking on Morphological Domains in an Operational Cesium Lead Halide Perovskite Solar Cell
摘要： The dynamics of photogenerated carriers and mobile ions in an operational cesium lead halide (CsPbI3) perovskite solar cells (PSC) under working conditions are studied using nanoscale resolved photoluminescence (PL) lifetime imaging microscopy. The temporally and spatially resolved PL changes in the perovskite film during and after bias light soaking are dynamically monitored. By analyzing the dynamic variations of PL intensity and PL lifetime of an open-circuited PSC, the impacts of light soaking are revealed by a dynamic model of photogenerated charge carrier and mobile ions. We confirmed the different behavior from morphological domains interiors and domains boundaries during light soaking, which shed light on the engineering of the domain interiors in additions to the commonly considered domain boundary strategies. This work provides a full picture of the photogenerated process in an operating PSC and therefore guides the design and operation of perovskite-based optoelectronic devices.
关键词： charge carriers,perovskite solar cells,mobile ions,light soaking,photoluminescence
更新于2025-09-12 10:27:22
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Elimination of Light-Soaking Effect in Hysteresis-Free Perovskite Solar Cells by Interfacial Modification
摘要： The hysteresis and light-soaking effect have been observed in organo-metal halide perovskite solar cells (PSCs) under operating conditions, which inhibit the precise evaluation of power output. The mechanisms leading to these effects are little understood. Here, our studies have demonstrated that the light-soaking effect is related to the electron selective layer/perovskite interface in hysteresis-free PSCs. The introduction of [6,6]-phenyl C61-butyric acid methyl ester (PC61BM) doped with CH3NH3I molecules as the interfacial layer can effectively release or eliminate this effect due to the efficient charge transfer, accompanied with the best stable output efficiency of 19% and an ultrahigh fill factor over 84%. Capacitance -voltage and capacitance -frequency curves derived from electrochemical impedance spectroscopy demonstrate that the light-soaking effect in PSCs mainly originates from the charge accumulation at the PC61BM/perovskite interface. The CH3NH3I doped in PC61BM forestalls the ion movement among the perovskite and thus eliminate the light-soaking effect. Furthermore, a model that combines ion migration and charge accumulation process to interpret the light-soaking effect and performance improvement in PSCs is proposed.
关键词： perovskite solar cells,light-soaking effect,hysteresis,charge transfer,interfacial modification
更新于2025-09-12 10:27:22
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Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se <sub/>2</sub> Solar Cells and Annealing Effects under Illumination
摘要： Several studies have been performed on proton irradiation onto alkali-metal untreated Cu(In,Ga)Se2 (CIGS) solar cells. However, there are almost no studies describing similar effects on alkali-treated CIGS solar cells. With this motivation, this work investigates proton irradiation and annealing effects under illumination on cesium-?uoride-free (CsF-free) and CsF-treated CIGS solar cells. Both CsF-free and CsF-treated CIGS solar cells degrade under proton irradiation. External quantum ef?ciency measurements show degradation in long wavelengths after the treatment. The experimental data are ?tted with a simulation, which show that proton-irradiated degradation is more severe at high ?uence. Capacitance–voltage measurements show a broadening of the depletion region after proton irradiation, which is due to the decreased net carrier concentration. It is proposed that proton irradiation at low ?uence generates shallow-type defects, whereas high-?uence protons generate deep defects. However, it is observed that room-temperature storage of the proton-irradiated solar cells causes partial recovery. Thermal annealing under illumination treatments is found to be bene?cial to the drastic recovery of the performance of solar cells irradiated at low ?uence. High-?uence proton-irradiated solar cells undergo minor recovery.
关键词： Cu(In,Ga)Se2 solar cells,cesium-?uoride,heat-light soaking,proton irradiation,annealing
更新于2025-09-11 14:15:04
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Heat degradation of sputter-deposited Cu(In,Ga)Se2 solar cells and modules: Impact of processing conditions and bias
摘要： We report accelerated heat degradation studies on fully encapsulated Cu(In,Ga)Se2 modules as a function of film growth parameters, in particular back contact selenization (preeSe), as well as the impact of bias (light/voltage) during heat degradation. We show that pre-Se conditions have a profound effect on the heat stability of the device, whereby reduced preeSe, while increasing initial efficiency, results in strong heat degradation, driven by a combination of reduced space-charge region and reduced minority carrier lifetime (as evident from external quantum efficiency measurements) in the light-soaked state and resulting in strong degradation of short-circuit current. This is also accompanied by a stronger increase in the shallow acceptor concentration (as measured by capacitance-voltage profiling) in the degraded state, suggesting that the SeeCu divacancy complex (VSe-VCu) is likely responsible. In this case, appearance of a high concentration of deep acceptor states accompanies increased shallow doping upon light-soaking, with the former reducing bulk lifetime and the latter further affecting electron collection due to narrow depletion width. This result suggests that bulk structural properties of the absorber film are strongly impacted by the back contact selenization conditions, making the film more susceptible to heat degradation. In the second part of this paper we show that electrical or light bias during heat exposure reduces degradation, in particular almost fully eliminating the above short-circuit current loss. This is a surprising result as usually the positive effects of bias are attributed to interfacial changes, while our results demonstrate that bulk properties can be improved as well.
关键词： Absorber,Interface,Defects,Thin film solar cell,Heat degradation,Reliability,Light soaking,Copper indium gallium selenide
更新于2025-09-11 14:15:04