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Enhancing the stability of perovskite solar cells through functionalisation of metal oxide transport layers with self-assembled monolayers
摘要： A systematic study of the application of self-assembly monolayers (SAMs) onto electron and hole transporting layers for perovskite solar cells (PSCs) stability is reported. Cs0.05FA0.83MA0.17Pb(I0.87Br0.13)3 (FMC) perovskite films were deposited onto tin oxide (SnO2) and nickel oxide (NiOx) layers that were functionalized with ethylphosphonic acid (EPA) and 4-bromobenzoic acid (BBA) SAMs. X-ray diffractometry measurements were performed on these films shortly after they were deposited. The diffractograms agree with the positions reported in the literature for the crystal structure of the FMC. The results show that the deposition of SAMs on the metal oxide layers yields positive improvements in the FMC film stability and in the device stability when using FMC as the active layer. The work shows that by adopting SAMs, the long-term stability of PSCs cells under accelerated test conditions can be enhanced, and this provides one step on the way to making this technology a commercial reality.
关键词： Degradation study,Perovskite film,Self-assembly monolayer,Perovskites device,Temperature induced degradation,Light induced degradation
更新于2025-09-23 15:19:57
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Hydrogenation behaviors in passivated emitter and rear silicon solar cells with variously hydrogenated SiNx films
摘要： From the point of view in sustainable energy, photovoltaic (PV) technology has been recognized as one of the most suitable solutions to replace fossil fuel technologies for electrical generation. However, in PV modules, 95% of solar cells made from P-type boron doped CZ-grown silicon substrates have a reliability issue, called light induced degradation (LID), which strongly affects their practically long-term use. Carrier induced hydrogenation (CIH) is one of the solutions through injection of excess carrier into Si solar cells with moderate thermal treatment. The mechanism of CIH process is the passivation of B-O related defects by hydrogen atoms with negative charge state. In the report, we can find the efficiency enhancement of commercial passivated emitter and rear cells (PERC) by hydrogenated silicon nitride (SiNx:H) films which were prepared by plasma-enhanced chemical vapor deposition and released hydrogen for Si passivation. In order to understand the behaviors of hydrogenation in Si solar cells, we manipulate the amount of hydrogen effused from the rear SiNx:H layers into the silicon substrate. A quadratic trend of average conversion efficiency gain for solar cells was observed after CIH treatment process. The mechanism of hydrogenation for PERC, including carrier induced hydrogenation and excess-hydrogen induced degradation, was investigated.
关键词： hydrogen induced degradation,silicon solar cells,hydrogen passivation,light induced degradation
更新于2025-09-23 15:19:57
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Anti-LID Process with a Remote Direct Heating Method Using a Half-Bridge Resonance Circuit for a PERC Solar Cell Module
摘要： As the importance of the levelized cost of electricity (LCOE) increases in the solar cell industry, the demand for high-ef?ciency solar cells is rapidly increasing. Typically, p-type passivated emitter rear contact (PERC) solar cells are the most commonly used in the industry, and their ef?ciency is approximately 22–23%. P-type solar cells are reported to exhibit a light-induced degradation (LID) phenomenon, in which their output constantly decreases during power generation under solar radiation, and the output signi?cantly reduces as their reference ef?ciency increases. Ultra-high-ef?ciency solar cells, which are on high demand, have a considerable output reduction due to the LID phenomenon; hence, technologies to prevent the LID phenomenon are required. However, research on this phenomenon has not been conducted because there is no method to transfer heat to solar cells inside the encapsulant when the modules are produced. In this study, a regeneration state was formed by remotely heating solar cells without damaging the encapsulant of the solar cell module. This was accomplished by using a heating method based on an induction magnetic ?eld. A half-bridge resonance circuit was used to apply the induction magnetic ?eld, and the temperature of the solar cell was controlled by adjusting the magnitude of the current ?owing through the coil. To determine whether only the solar cell was heated, the temperature distribution inside the module was analyzed using an IR camera. The minority carrier lifetime was examined by real-time observation of the open-circuit voltage pattern of the solar cell. Finally, the observed real-time open-circuit voltage data were used, and dynamic simulation of the regeneration process was applied to analyze the LID activation energy generated in the regeneration process of the solar cell module. In conclusion, research was conducted on applying the regeneration state to prevent the LID phenomenon in the solar-cell-module stage, and the LID activation energy of the solar cell module was extracted. Based on this, a nondestructive degradation prevention technology for the solar cell module was developed.
关键词： solar module,half-bridge resonance circuit,light-induced degradation,solar cell,regeneration,remote heating
更新于2025-09-23 15:19:57
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Analysis of Field Degradation Rates Observed in All-India Survey of Photovoltaic Module Reliability 2018
摘要： The analysis of performance degradation in photovoltaic (PV) modules with c-Si technologies as observed in the All-India Survey of PV Module Reliability 2018 is presented in this article. The degradation rates are correlated with the module age, system size, mounting configuration, and climate of deployment. Key failure modes responsible for the higher degradation rates seen in certain sites are identified using visual, infrared, and electroluminescence imaging. Potential-induced degradation is found to be the key mechanism responsible for higher degradation rates seen in Young sites. Also, deployment in hot climates and rooftops is seen to accelerate degradation. Multipoint analysis of degradation rates is presented at sites inspected in prior All-India Surveys.
关键词： potential-induced degradation (PID),All-India Survey,solar photovoltaic (PV),light-induced degradation (LID),field survey,silicon,reliability,degradation
更新于2025-09-12 10:27:22
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Direct Examination of the Deactivation of the Boron–Oxygen Center in Cz-Si Solar Cells Under Regeneration Conditions via Electroluminescence
摘要： We examine the regeneration kinetics of the boron–oxygen defect in boron-doped p-type Czochralski-grown silicon (Cz-Si) solar cells as a function of the excess carrier concentration Δn at the regeneration conditions, i.e., at elevated temperature (140 °C). To perform the regeneration, we apply different forward-bias voltages (Vappl) to solar cells in darkness and measure directly the emitted electroluminescence (EL) signal at different time steps during the regeneration of the cell. Measuring the EL signal emitted by the solar cell during regeneration, we are able to directly determine Δn during regeneration for each applied voltage. In addition to the EL signal, we measure the electric current flowing through the solar cell during the regeneration process. This current is proportional to the overall recombination rate in the cell and, hence, reflects the changing bulk recombination during the regeneration process. From the measured time-dependent cell current, we determine the deactivation rate constant Rde of the boron–oxygen defect. Our experimental results unambiguously show that Rde increases proportionally with Δn during the regeneration process.
关键词： Boron–oxygen defect,injection,regeneration,electroluminescence (EL),carrier,passivated emitter and rear cells (PERCs),Czochralski-grown silicon,light-induced degradation (LID)
更新于2025-09-12 10:27:22
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Output power behavior of passivated emitter and rear cell photovoltaic modules during early installation stage: influence of light-induced degradation
摘要： The conversion efficiency of passivated emitter and rear cell (PERC) photovoltaic (PV) modules decreases via light-induced degradation (LID). In this study, two models of commercial PERC PV modules were employed. These modules were exposed outdoors until the accumulated solar irradiation reached 687 kW m?2 to investigate their power generation behavior during the early installation stage. The maximum output power (Pmax) finally decreased by 1.52% in one model and by 4.29% in the other model. Pmax of the latter model increased after LID owing to light-induced regeneration under open-circuit conditions. However, power generation in the array of the latter model connected to an electrical power grid was not changed after LID and no recovery was observed. It was found that the extent of degradation and the behavior differ depending on not only the difference in models but also the circuit conditions during exposure. ? 2019 The Japan Society of Applied Physics
关键词： early installation stage,power generation behavior,light-induced degradation,passivated emitter and rear cell,photovoltaic modules
更新于2025-09-11 14:15:04
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Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks
摘要： Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effective excess charge carrier lifetime in lifetime samples made of Czochralski silicon during illuminated treatment at 80–150 °C. Samples are passivated with either AlOx:H/SiOxNy:H/SiNx:H or SiOxNy:H/SiNx:H stacks stemming entirely from plasma-enhanced chemical vapor deposition. Samples show strong variations in BRD depending on passivation stacks and treatment conditions, and a potential link to light and elevated temperature-induced degradation (LeTID) is discussed. All samples are fired in a belt furnace, and variations of firing temperature and belt speed are shown to influence SRD slightly. SRD is furthermore accelerated with increasing treatment temperature and an apparent activation energy Eapp = 1.07 ± 0.02 eV is determined in SiOxNy:H/SiNx:H passivated samples. Interpretation of Eapp is, however, difficult as both changes in interfacial defect and fixed charge density occur in parallel during SRD.
关键词： LeTID,surface-related degradation,light-induced degradation,Czochralski,PECVD
更新于2025-09-09 09:28:46
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Impact of black silicon on light- and elevated temperature-induced degradation in industrial passivated emitter and rear cells
摘要： Light and elevated‐temperature induced degradation (LeTID) is currently a severe issue in passivated emitter and rear cells (PERC). In this work, we study the impact of surface texture, especially a black silicon (b‐Si) nanostructure, on LeTID in industrial p‐type mc‐Si PERC. Our results show that during standard LeTID conditions the b‐Si cells with atomic‐layer‐deposited aluminum oxide (AlOx) front surface passivation show no degradation despite the presence of a hydrogen‐rich AlOx/SiNx passivation stack on the rear. Furthermore, b‐Si solar cells passivated with silicon nitride (SiNx) on the front lose only 1.5%rel of their initial power conversion efficiency, while the acidic‐textured equivalents degrade by nearly 4%rel under the same conditions. Correspondingly, clear degradation is visible in the internal quantum efficiency (IQE) of the acidic‐textured cells, especially in the ~850 to 1100‐nm wavelength range confirming that the degradation occurs in the bulk, while the IQE remains nearly unaffected in the b‐Si cells. The observations are supported by spatially resolved photoluminescence (PL) maps, which show a clear contrast in the degradation behavior of b‐Si and acidic‐textured cells, especially in the case of SiNx front surface passivation. The PL maps also suggest that the magnitude of LeTID scales with surface area of the texture, rather than wafer thickness that was recently reported, although the b‐Si cells are slightly thinner (140 vs 165 μm). The results indicate that b‐Si has a positive impact on LeTID, and hence, benefits provided by b‐Si are not limited only to the excellent optical properties, as commonly understood.
关键词： passivated emitter and rear cells,multicrystalline silicon,light‐induced degradation,black silicon,solar cells,light‐ and elevated temperature‐induced degradation
更新于2025-09-04 15:30:14