Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads

摘要： Herein, GaN driver FETs with a high energy bandgap are employed in photosensitive inverters to eliminate light-shield layers (LSLs). This configuration exhibits full-swing characteristics of photosensitive inverters comprised of multi-layered MoS2 FETs loads in photosensitive pseudo-depletion mode. The GaN FETs provide both high current drivability and excellent photo-leakage immunity under visible light (Eg~3.1 eV). This allows the photosensitive inverters to be successfully operational without LSLs. The relative degradation (%) of voltage gain for photosensitive inverters with GaN drivers from dark to blue light exposure is improved from 67.7% to 53.0 %, as compared to previously reported MoS2 inverters with LSLs.