- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells
摘要： We study the coherent dynamics of localized excitons in 100 periods of 2.5-nm-thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43-meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29 μeV as well as the relatively weak exciton-phonon interaction (0.7 μeV/K) confirm a strong, quantum-dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers.
关键词： localized excitons,photon echoes,exciton-phonon interaction,coherent dynamics,(In,Ga)N/GaN quantum wells
更新于2025-09-23 15:21:01
-
Radiative lifetime of localized excitons in transition-metal dichalcogenides
摘要： Disorder derived from defects or local strain in monolayer transition-metal dichalcogenides (TMDs) can lead to a dramatic change in the physical behavior of the interband excitations, producing inhomogeneous spectral broadening and localization leading to radiative lifetime increase. In this study, we have modeled the surface disorder of a monolayer TMD sample through a randomized potential in the layer plane. We show that this model, applied to a monolayer of WSe2, allows us to simulate the spectra of localized exciton states as well as their radiative lifetime. In this context, we give an in depth study of the in?uence of the disorder potential parameters on the optical properties of these defects through energies, density of states, oscillator strengths, photoluminescence (PL) spectroscopy, and radiative lifetime at low temperature (4 K). We demonstrate that localized excitons have a longer emission time than free excitons, in the range of tens of picoseconds or more, the radiative decay time depending strongly on the disorder parameter and dielectric environment. Finally, in order to prove the validity of our model, we compare it to available experimental results of the literature.
关键词： disorder potential,localized excitons,radiative lifetime,transition-metal dichalcogenides,photoluminescence spectroscopy
更新于2025-09-09 09:28:46