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Controllable Multia??Step Preparation Method for Higha??Efficiency Perovskite Solar Cells with Low Annealing Temperature in Glove Box
摘要： Through a low-temperature process, a controlled two-step method in glove box is achieved, which avoids the need to transfer from glove box to air for annealing with the aid of moisture to assist crystallization in the traditional two-step method. Further utilizing recoating FA0.9MA0.1I solution to improve the formed perovskite, a high-efficiency perovskite solar cell is finally prepared through solid-liquid reaction.
关键词： low annealing temperature,perovskite solar cells,multi-step method,annealing-free
更新于2025-09-23 15:19:57
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C-doping into h-BN at low annealing temperature by alkaline earth metal borate for photoredox activity
摘要： BCN (boron carbon nitride) nanosheets are promising photocatalyst materials for solar fuel production by visible light-driven water splitting and CO2 reduction due to their tunable band gap and unique properties. C-doping into h-BN by thermal annealing makes possible the preparation of BCN nanosheets with photocatalytic activity under visible light irradiation, but it generally requires a very high temperature (>1250 °C) from the thermodynamic viewpoint. Here, we report a new method to prepare BCN nanosheets with visible light-photocatalytic activity at lower annealing temperature (1000 °C) than equilibrium by adding alkaline earth metal compounds. BCN nanosheets formed in borate melt show a clear layered structure, tunable bandgap and photocatalytic activity for water splitting and CO2 reduction under visible light illumination. This provides a direction for doping other elements into h-BN at low annealing temperature by alkaline earth metal borates.
关键词： h-BN,low annealing temperature,BCN nanosheets,water splitting,CO2 reduction,C-doping,photoredox activity,alkaline earth metal borate
更新于2025-09-19 17:15:36
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Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature
摘要： In this paper, bottom-gate top-contact thin film transistors (TFTs) with a double active layer of InZnO:N/InZnSnO (IZO:N/IZTO) were successfully prepared. The IZO:N/IZTO thin films were deposited on SiO2/p-Si substrates by radio frequency (RF) magnetron sputtering at room temperature. The transmittance of both the IZO:N thin film and the IZTO thin film were more than 80% in the range of visible light. The IZO:N thin film and the IZTO thin film were found to be amorphous at the annealing temperature of 325?°C by means of X-ray diffraction (XRD). The double active layer IZO:N/IZTO TFT exhibited good electrical performance with a saturation mobility of 41.5?cm2?V?1?s?1, an on/off current ratio of 2.88 × 105, and a threshold voltage of 1.0?V, which achieved high mobility at the low annealing temperature of 325?°C.
关键词： low annealing temperature,RF magnetron sputtering,high mobility,InZnO:N/InZnSnO,thin film transistors
更新于2025-09-09 09:28:46