- 标题
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- 实验方案
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Nonlinear and Permanent Degradation of GaAs-Based Low-Noise Amplifier Under Electromagnetic Pulse Injection
摘要： Electromagnetic pulse (EMP)-induced nonlinear degradation of an L-band gallium arsenide-based low-noise amplifier (LNA) is studied by an injection experiment, failure analysis, and mixed-mode simulation. The experimental results indicate that the real-time response, radio frequency, and direct current characteristic of LNA samples under an EMP show nonlinear and permanent degradation features. In detail, the characteristics first degrade and then recover slightly as the injection power increases. In addition, the nonlinear degradation shows a close dependence on the pulse properties. Failure analysis reveals that the degradation of the LNA is attributed to latent failure defects under and around the gate metal strip of the first-stage high electron mobility transistor, with recovery well interpreted by an EMP-induced 'annealing effect.' Simulation results show that if the pulse repetition frequency is smaller than 2.5 kHz, a pulse repetition-induced thermal accumulation effect will not occur and that the pulsewidth τ will mainly determine the actual action duration and the temperature of the 'annealing effect.' Based on the above mechanism, the dependence of the pulse properties on nonlinear degradation is well explained.
关键词： nonlinear,low-noise amplifier (LNA),mechanism,electromagnetic pulse (EMP),Degradation
更新于2025-09-19 17:15:36
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Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications
摘要： The cryogenic performance of radiation-hardened radio-frequency (RF) low-noise amplifiers (LNAs) is presented. The LNA, which was originally proposed for the mitigation of single-event transients (SETs) in a radiation environment, uses inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in its core cascode stages. In this prototype, the upper common-base SiGe HBT is configured in inverse mode for balanced RF performance and reduced SET sensitivity. In order to better exploit the inverse-mode LNAs in a variety of extreme-environment applications, the RF performance of the LNA was characterized using liquid nitrogen to evaluate cryogenic operation down to 78 K. While the SiGe LNA exhibits acceptable RF performance for all temperature conditions, there is a noticeable gain drop observed at 78 K compared to the conventional forward-mode design. This is attributed to the limited high-frequency performance of an inverse-mode SiGe HBT. As a guideline, compensation techniques including layout modifications and profile optimization are discussed for the mitigation of the observed gain degradation.
关键词： low-noise amplifier (LNA),heterojunction bipolar transistor (HBT),cascode,inverse mode,extreme environment,cryogenic measurement,silicon-germanium (SiGe)
更新于2025-09-11 14:15:04
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Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends
摘要： A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthesis methodology is proposed that minimizes the overall losses by combining the PA output and the LNA input matching networks together with the T/R switch into one network. The technique improves mm-wave transceiver performance in terms of PA efficiency and LNA noise figure. The proposed T/R combiner can achieve high linearity and can handle large PA output voltage swings. The architecture can be implemented in any process which provides high integration capability. A Ka-band implementation is demonstrated using 45 nm CMOS silicon-on-insulator that includes a high power, four-stack-based PA and an inductively source-degenerated cascode-based LNA. Within the front-end, the PA achieves saturated output power of 23.6 dBm with peak power added efficiency of 28%, while the LNA achieves NF of 3.2 dB. The overall chip area is 0.54 mm2, including pads.
关键词： transmit/receive (T/R) switch,low-noise amplifier (LNA),power amplifier (PA),5G transmitters,stacked power amplifier,silicon-on-insulator (SOI),time-division duplex (TDD),CMOS,millimeter-wave (mm-wave),Ka-band
更新于2025-09-04 15:30:14