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Solution-processed inorganic p-channel transistors: Recent advances and perspectives
摘要： For decades, inorganic n-type metal-oxide semiconductors have attracted great interest across a wide range of applications due to their excellent electrical property, low cost, high optical transparency, and good ambient stability. The next attention has focused on the development of high-performance p-type semiconductors with comparable opto/electric properties to n-type counterparts. This paper provides a comprehensive overview of recent progress in solution-processed inorganic p-type semiconductors that can be applied as channel layers in thin-?lm transistors and complementary metal-oxide semiconductor-based integrated circuits. We ?rst introduce conventional p-type oxide semiconductors and review their achievements on related devices. Then, we pay a speci?c focus on emerging (pseudo)halide materials for realization of transparent, low-temperature and high-performance printable electronics and circuits.
关键词： Inorganic p-type semiconductor,Low-temperature process,Solution process,Field-e?ect transistor,Printable electronics
更新于2025-09-09 09:28:46
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Strategic Selection of the Oxygen Source for Low Temperature-Atomic Layer Deposition of Al <sub/>2</sub> O <sub/>3</sub> Thin Film
摘要： The influence of two oxygen source types, H2O and O3, on residual C-related impurities in atomic-layer-deposited (ALD) Al2O3 film is systematically examined. ALD Al2O3 film grown using H2O contains negligible C-related impurities irrespective of growth temperature. However, the C-related impurity in film grown using O3 exhibits strong dependence on growth temperature; only Al carbonate (Al-CO3) is present in film grown at 300 °C, but C-related impurities with lower oxidation states, such as Al-COOH and Al-CHO, appear as the temperature decreases to 150 °C. This suggests that the reactivity of O3 and H2O in the ALD process has a different temperature dependence; from a residual impurity perspective, compared to O3, H2O is a beneficial oxygen source for low temperature processes. Electrical properties, such as charge trapping and gate leakage current, are also examined. For a growth temperature of 300 °C, the film grown using O3 is slightly superior to the film grown using H2O due to its high film density. However, the film grown using H2O demonstrates better electrical characteristics at low growth temperature, 150 °C.
关键词： oxygen source,atomic layer deposition,low temperature process,ozone,water
更新于2025-09-04 15:30:14