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- 2018
- microfabrication
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One-step Fabrication of Bio-Compatible Coordination Complex Film on Diverse Substrates for Ternary Flexible Memory
摘要： Recently, resistance random access memories (RRAMs) have been studied extensively arising from the increasing demand for information. However, its flexible device remains challenging because the active materials involved need to be nontoxic, non-polluting, distortion-tolerable, and bio-degradable as well adhesive to diverse flexible substrates. In this paper, we employed tannic acid (TA) and iron ion (Fe (III)) coordination complex as the active layer in sandwich-like (Al/active layer/substrate) device to achieve memory performance. A nontoxic, biocompatible TA-Fe (III) coordination complex was synthesized by one-step self-assembly solution. The memory performance of TA-Fe (III) retention time up to 15000 s, yield up to 53%. Furthermore, the TA-Fe (III) coordination complex can form high-quality film and show stable ternary memory behaviors on various flexible substrates, such as polyethylene terephthalate (PET), polyimide (PI), printer paper and leaf. The device can be degraded by immerse in vinegar solution. Our work will broaden the application of organic coordination complex in flexible memory device with diverse substrates.
关键词： Bio-compatible,RRAM,ternary memory,flexible
更新于2025-11-21 11:18:25
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Crystalline Semiconductor Boron Quantum Dots
摘要： Zero-dimensional boron structures have always been the focus of theoretical research owing to its abundant phase structures and special properties. Boron clusters have been reported extensively by combining structure searching theories and photoelectron spectroscopy experiments, however, crystalline boron quantum dots (BQDs) have rarely been reported. Here we report the preparation of large-scale and uniform crystalline semiconductor BQDs from the expanded bulk boron powders via a facile and efficient probe ultrasonic approach in acetonitrile solution. The obtained BQDs have 2.46 nm in an average lateral size and 2.81 nm in thickness. Optical measurements demonstrate that strong quantum confinement effect occurs in the BQDs, implying the increase of the bandgap from 1.80 eV for the corresponding bulk to 2.46 eV for the BQDs. By injecting the BQDs into polyvinylpyrrolidone as an active layer, a BQDs-based memory device is fabricated which shows a rewriteable nonvolatile memory effect with a low transition voltage of down to 0.5 V and a high ON/OFF switching ratio of 103 as well as a good stability.
关键词： ultrasound,quantum dots,nonvolatile memory device,quantum confinement effect,boron
更新于2025-11-14 15:23:50
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Scaling effects on the optical properties of patterned nano-layered shape memory films
摘要： Nano-layered films of PVAc/PU systems were fabricated by forced assembly coextrusion method. The bulk shape memory properties of PVAc/PU systems were utilized to program nanoscale patterns such as diffraction grating which exhibit iridescence after patterning. A hot embossing process has been utilized to imprint diffraction grating patterns as nano-scale information onto the surface of the thin multilayer films. Three levels of hierarchy i.e. layer thickness, spacing and heights of patterns, governs the functionality of the patterned multilayer film. The time and temperature dependent viscoelastic shape memory behavior determines the opto-mechanical tunability of the film. Mechanical switching of the patterns also leads to optical switching of the films which corresponds to their efficiency of information retrieval. The recovery of patterns as well as the diffractive property depends on the layer thickness (l) of films and heights of patterns (h0). The results illustrate that the higher ratio of h0/l better is the recovery of the grating patterns and the corresponding diffractive properties. This scaling effect enables versatile applications in information security by tuning the layer structure of the multilayer shape memory films.
关键词： scaling effect,shape memory film,pattern programming,hot embossing,multilayer film,information security,diffractive optical element,thermal responsive optics
更新于2025-10-22 19:40:53
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49.1: <i>Invited Paper:</i> Optical Sensitive Organic Memory Transistors
摘要： This work discusses the electrical properties of the 2,9-di-decyl-dinaphtho-[2,3-b:20,30-f]-thieno-[3,2-b]-thiophene (C10-DNTT) organic field effect transistors under different programming conditions. We noticed that the shifting of threshold voltage (Vth) can last for more than 20000 seconds which allows these devices to store information as a memory buffer. These devices can be further integrated into an array form for large area optical signal sensing.
关键词： organic memory transistor,structural inhomogeneity,memory
更新于2025-09-23 15:23:52
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[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field
摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.
关键词： floating gate,program-erase cycling endurance,memory reliability,oxide degradation,electron tunneling,Flash memory,electron trapping
更新于2025-09-23 15:23:52
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The Structure of Phase-Change Chalcogenides and Their High-Pressure Behavior
摘要： Phase-change materials (PCMs) used in data storage devices have unique structural features and transition properties by thermal heating. Pressure, as another important thermodynamic tool, can also induce a series of interesting phase transitions in PCMs, accompanied by the altering of bonding nature and physical properties. Here, the structure transition as well as property change of prototypical phase-change material Ge–Sb–Te (GST) under hydrostatic pressure has been reviewed. The high-pressure behavior of some other relevant chalcogenides such as GeTe, Sb2Te3, and GeSe, is also discussed. The revealing of structure and property changes due to high pressure sheds light on the underlying physics of many fascinating properties of PCMs, and therefore it will have profound implications on various applications of phase change materials in memory and other fields.
关键词： high pressure,phase-change materials,Ge–Sb–Te,memory materials
更新于2025-09-23 15:23:52
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Improvement of resistive memory properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/CH3NH3PbI3 based device by potassium iodide additives
摘要： In this study, a glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/CH3NH3PbI3 (MAPbI3)/poly(methyl methacrylate) (PMMA)/Al nonvolatile memory device is demonstrated. The MAPbI3 film is prepared on top of the PEDOT:PSS by a two-step process, showing a bipolar resistive switching character. Because PEDOT:PSS is widely used as a hole transporting layer for a planar heterojunction perovskite solar cell, the demonstrated memory property of PEDOT:PSS/MAPbI3 combination opens up the application potential for multifunctional optoelectronic memory. The device is improved by introducing potassium iodide (KI) as an additive to ameliorate the quality of MAPbI3 material and PEDOT:PSS/MAPbI3 interface. As compared with the pristine MAPbI3, the KI-doped perovskite device exhibits a resistive switching ON/OFF ratio of 103, better endurance and more stable retention. The KI additive is helpful for forming uniform crystalline grain, high-compact structure and passivation of defect states for MAPbI3 film and interface, which are the main reasons to the improved memory properties. Finally, we suggest that KI has great potential to be used as an additive for constructing a high performance perovskite memory device.
关键词： CH3NH3PbI3,Resistive random access memory,PEDOT:PSS,KI additive
更新于2025-09-23 15:23:52
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Photothermal-Induced Self-Healable and Reconfigurable Shape Memory Bio-Based Elastomer with Recyclable Ability
摘要： Photothermal-induced self-healable and shape memory materials have drawn much attention due to the rapidly growing technical applications and environmental requirements. As epoxy natural rubber (ENR) is a kind of bio-based elastomer with good mechanical properties, weather resistance, and air impermeability, it is of great significance to incorporate ENR with recyclable, photothermal-induced self-healable and shape memory properties. In this study, we report a simple method to cross-link ENR with dodecanedioic acids (DAs) through esterification reaction, and during the cross-linking process, a little aniline trimer (ACAT, a kind of oligoaniline) was added at the same time. Then, the ENR-DA-ACAT vitrimers that were covalently cross-linked with recyclable, self-healable, and multiple responsive properties were obtained, which also possessed various functions. As a result of the transesterification reactions at elevated temperatures, the ENR-based vitrimers possess the ability to be reprocessed and self-healed, and the mechanical properties could be maintained even after three consecutive breaking/mold pressing cycles. Besides, the vitrimer is also responsive to near-infrared (NIR) light and pH with the introduction of ACAT, and we also find that ACAT can be used as a catalyst to accelerate the transesterification reaction. Moreover, it is demonstrated that the ENR-DA-ACAT vitrimer could also be used to construct the reconfigurable shape memory polymer; the shape fixing ratio and shape recovery ratio are both above 95% in the reconfiguration process, and the multistage shape memory performance can also be achieved by NIR irradiation, which will potentially lead to a wide application for ENR in the field of actuators.
关键词： self-healing,reconfigurable shape memory,photothermal effect,recyclable,transesterification reaction,ENR
更新于2025-09-23 15:23:52
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2D reentrant micro-honeycomb structure of graphene-CNT in polyurethane: High stretchability, superior electrical/thermal conductivity, and improved shape memory properties
摘要： The recent rapid development of soft electronics and wearable technology has demanded materials with the function of combining mechanical deformation and electronics. Particularly, materials simultaneously having memory shape characteristics in which mechanical deformation repeatedly occurs in response to stimulus, high stretchability and excellent electric/heat transfer characteristics are interesting actuator materials in future applications. As a stretchable and conductive platform, we fabricated a reentrant micro-honeycomb structure from graphene-CNT, which had structural stretchability due to the accordion-like reentrant structure and continuous conductive paths in the vertical and horizontal directions. To impart shape memory properties, we fabricated composites by simply infiltrating shape memory polyurethane (SMPU) into a stable graphene/CNT framework. Our resulting reentrant micro-honeycomb graphene-CNT/SMPU composites simultaneously exhibited a relatively low resistivity of 5 Ω cm, a change in resistance of less than 10% in the 50% stretching/releasing states, long term stability, and superior tensile shape memory properties, including 95.6% shape fixity and a 90.6% recovery ratio. Regularly distributed graphene-CNT structures offer heterogeneous nucleation sites and undisturbed crystal growth in neat SMPU pillars, resulting in superior shape memory properties. We also constructed a circuit with portable batteries to demonstrate that our reentrant graphene-CNT/SMPU composite offers potential applications as an emergency circuit breaker.
关键词： Shape memory,Polyurethane,Reentrant graphene-CNT,Composite,Ice-templated self-assembly
更新于2025-09-23 15:23:52
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Electroresistance of Pt/BaTiO<sub>3</sub>/LaNiO<sub>3</sub> ferroelectric tunnel junctions and its dependence on BaTiO<sub>3</sub> thickness
摘要： Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention due to their great potential in next generation non-volatile memories. In this work, we report on thickness-dependent tunneling electroresistance (TER) and corresponding evolution of transport behavior in Pt/BaTiO3/LaNiO3 FTJs with various BaTiO3 thicknesses of 2.0, 3.2, and 4.8 nm. The TER effect is observed in the 3.2 nm-thick Pt/BaTiO3/LaNiO3 tunnel junction and an ON/OFF current ratio of ~170 is achieved due to the modulation of barrier height by polarization reversal. When the BaTiO3 is increased to 4.8 nm in thickness, the ferroelectric-modulation of the barrier profile becomes more pronounced and the dominant transport mechanism changes from electron tunneling to thermally-activated thermionic injection. As a result, the OFF state current is significantly reduced due to the suppression of the Fowler-Nordheim tunneling with increased width and height of the BaTiO3 barrier. A greatly improved ON/OFF current ratio of ~12500 is thus achieved in the 4.8 nm-thick Pt/BaTiO3/LaNiO3 FTJ device. These results facilitate deeper understanding of the TER effects from the viewpoint of not only the barrier profile but also the transport mechanism.
关键词： Pulsed laser deposition,Ferroelectric tunnel junctions,Ferroelectric memory,Resistive switching
更新于2025-09-23 15:23:52