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[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field
摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.
关键词： floating gate,program-erase cycling endurance,memory reliability,oxide degradation,electron tunneling,Flash memory,electron trapping
更新于2025-09-23 15:23:52
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[IEEE 2019 IEEE 13th International Conference on ASIC (ASICON) - Chongqing, China (2019.10.29-2019.11.1)] 2019 IEEE 13th International Conference on ASIC (ASICON) - A 63.3ps TDC Measurement System Based on FPGA for Pulsed Laser Ranging
摘要： The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes.
关键词： random number generation (RNG),resistive-switching memory (RRAM),Memory reliability
更新于2025-09-19 17:13:59