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High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric
摘要： In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.
关键词： metal-oxide semiconductors,thin-film transistors,high-k dielectric,high mobility,inkjet printing
更新于2025-11-14 15:19:41
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Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique
摘要： Polycrystalline CdO:In2O3 thin films for gas sensor applications were prepared on glass and silicon substrates by using one-step spray pyrolysis technique from the aqueous solution of CdCl2 and InCl3 at a substrate temperature of 300 °C. The structure, surface morphology, and the optoelectronic properties of prepared films were characterized respectively by means of X-ray diffraction (XRD), atomic force microscope and UV–visible spectroscopy. Based on the XRD results, the polycrystalline nature of CdO films has been confirmed, and In2O3 films were found to exhibit a preferred orientation along (222) diffracted plane. The grain size varies between 9.0 and 28.4 nm. The results of Hall effect measurement of CdO:In2O3 thin films confirms that all films were an n-type semiconductor. The electrical properties of prepared thin films and their sensitivity to nitrogen dioxide (NO2) gas are also studied. The influence of the operating temperature and In2O3 concentration on the NO2 response were investigated. It is found that all films are sensitive to NO2 gas, and the ideal operating temperature for the film contented 20 vol% of In2O3 was found to be 200 °C at a gas concentration of 25 ppm. The sensing mechanism of the CdO:In2O3 thin film is discussed and attributed to electron transfer between the sensing element and NO2 molecules.
关键词： NO2 gas sensor,Sensitivity,Optoelectronic properties,Structural,Morphology,Metal-oxide semiconductors
更新于2025-09-19 17:15:36
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Interfacial Engineering in Functional Materials for Dye‐Sensitized Solar Cells || Binary Semiconductor Metal Oxide as Photoanodes
摘要： As both natural and synthetic metal oxide semiconductors (MOSs) have diverse applications and the properties of MOS can be tailored in many ways, viz., varied choice of morphologies, introducing oxygen vacancies, doping. In photovoltaics, MOSs serve as a scaffold layer for loading dyes in dye-sensitized solar cells (DSSCs) and organic–inorganic hybrid perovskites in perovskite solar cells (PSCs), as well as electron and hole transport layers in DSSCs and organic solar cells (OSCs). The function of scaffold in DSSCs is to facilitate charge separation and charge transport, whereas that of the transport layers is to conduct one type of charge carrier block to the other type. Therefore, tailoring their properties is inevitable to develop high-performing photovoltaic devices using them. On the other hand, the electrochemical properties of the MOS such as band edge energies determine their success as photocatalysts [1].
关键词： metal oxide semiconductors,perovskite solar cells,photovoltaics,charge transport,dye-sensitized solar cells
更新于2025-09-12 10:27:22
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[Energy, Environment, and Sustainability] Sensors for Automotive and Aerospace Applications || Leakage Monitoring in Inflatable Space Antennas: A Perspective to Sensitive Detection of Helium and Nitrogen Gases
摘要： In?atable space structures have become an important part of space explorations due to their lightweight, simpler design, low cost, and fewer parts. These structures include antennas, solar arrays, solar concentrators, re?ectors, etc. These structures are made of ?exible polymers which can be folded and easily carried with spacecraft due to their small volume and weight. Structures, when reaching their destination, are in?ated through internal pressurization to achieve desired structural integrity. In space, these structures are subjected to very harsh environment such as high radiation levels, structural vibrations, and micrometeoroid bombardments. The polymeric material used to fabricate these structures is susceptible to degradation under these harsh conditions. These structures are prone to lose their structural integrity over long-term degradation of the material. The most common problem associated with in?ated space antennas is leakage of in?ated gas. Hence, the health monitoring of these structures becomes crucial to avoid structural failure due to leakages which may cause loss of information, accuracy, and money. Gas sensors are used to detect leakages in these structures. A mixture of helium (He) and nitrogen (N2) is used as in?ating gas in space antennas. Helium is the lightest gas after hydrogen and has chemically inert, non?ammable nature which makes it an ideal in?ating gas. However, the detection of He leakages is very dif?cult because of its nonreactive behavior with chemical species. Metal oxide based semiconducting (MOSs) materials are widely used sensing element for detection of various gases. Although it is very dif?cult to ?nd out He gas leakages, vanadium pentoxide (V2O5) can detect even a small concentration of He through resistive changes. In this chapter, we will discuss the requirement of leakage monitoring system for in?atable space antennas and He gas sensing properties of V2O5 semiconducting material.
关键词： Helium detection,Metal oxide semiconductors,Gas sensors,In?atable space structures
更新于2025-09-09 09:28:46