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Realization of ultra-high quality InGaN platelets to be used as relaxed templates for red microLEDs
摘要： In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by six equivalent {1011} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {1011} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {1011} planes, leading to the formation of high quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high quality template for red microLEDs.
关键词： selective area growth,InGaN,template,chemical mechanical polishing,vapor phase epitaxy,microLEDs
更新于2025-09-23 15:21:01
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Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1a?? <b> <i>??</i> </b> m in diameter
摘要： There is growing interest in microLED devices with lateral dimensions between 1 and 10 lm. However, reductions in external quantum ef?ciency (EQE) due to increased nonradiative recombination at the surface become an issue at these sizes. Previous attempts to study size-dependent EQE trends have been limited to dimensions above 5 lm, partly due to fabrication challenges. Here, we present size-dependent EQE data for InGaN microLEDs down to 1 lm in diameter fabricated using a process that only utilizes standard semiconductor processing techniques (i.e., lithography and etching). Furthermore, differences in EQE trends for blue and green InGaN microLEDs are compared. Green wavelength devices prove to be less susceptible to reductions in ef?ciency with the decreasing size; consequently, green devices attain higher EQEs than blue devices below 10 lm despite lower internal quantum ef?ciencies in the bulk material. This is explained by smaller sur- face recombination velocities with the increasing indium content due to enhanced carrier localization.
关键词： InGaN,microLEDs,size-dependent characteristics,external quantum efficiency,blue and green wavelengths
更新于2025-09-23 15:19:57