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oe1(光电查) - 科学论文

2 条数据
?? 中文(中国)
  • Microstrip broadband thin-film attenuators without via-hole-ground at millimeter wave frequencies

    摘要: A comprehensive design methodology for microstrip broadband attenuators is presented. Closed-form design equations are given for two types of distributed attenuators. The attenuators are based on a cascade connection of thin-film resistors and microstrip line sections. The structure provides maximally flat attenuation and wideband performance without the need of plated via holes to ground, facilitating manufacture as well as achieving proper performance at millimeter wave frequencies. Experimental results demonstrate the validity of the technique applied to 3 dB and 13 dB broadband attenuators on alumina substrate up to 67 GHz. The proposed topology can be applied not only to MIC, but also to MMIC designs at the highest frequencies.

    关键词: MM-wave,Thin-film microwave attenuator,Microstrip circuit

    更新于2025-09-19 17:15:36

  • NONLINEAR CHARACTERISTICS OF P-I-N DIODE CIRCUITS ANALYZED BY A PHYSICALLY BASED SIMULATION METHOD

    摘要: Nonlinear characteristics of semiconductor devices play a key role in the performances of circuits, but their modelling is still a big challenge in circuit simulations nowadays. This paper explores modelling nonlinear characteristics of circuits containing semiconductor devices by presenting a modified physically based simulation method. A p-i-n diode microstrip circuit is taken as a sample, and its nonlinear characteristics, such as the power limiting, bistability, and forward recovery characteristics, are simulated and analysed. The applied method demonstrates its good capability and accuracy of modelling the nonlinear characteristics in the simulation, and moreover clarifies the underlying physical mechanisms. In contrast, the Advanced Design System (ADS) software, a popular circuit simulation program based on the equivalent circuit model, fails to reveal some of those nonlinear characteristics.

    关键词: Nonlinear characteristics,microstrip circuit,p-i-n diode,semiconductor devices,physically based simulation method

    更新于2025-09-04 15:30:14