- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Pure Anatase Phase Titanium Dioxide Films Prepared by Mist Chemical Vapor Deposition
摘要: In this research, pure anatase phase titanium dioxide thin films were successfully fabricated for the first time using the mist chemical vapor deposition method, and optional values for deposition temperature and concentration of titanium tetraisopropoxide were established. It was found that the crystallinity of the titanium dioxide film was significantly improved by increasing the deposition temperature. The best crystallinity of titanium dioxide film was obtained at 400 ?C. It was confirmed that pure anatase phase titanium dioxide films could be obtained using different concentrations of titanium tetraisopropoxide. The lower concentration of titanium tetraisopropoxide produced better crystallinity in the resultant titanium dioxide film. The morphologies of the titanium dioxide thin films were also significantly influenced by the concentration of titanium tetraisopropoxide in the precursor solution.
关键词: titanium dioxide,anatase,thin films,mist chemical vapor deposition,growth control
更新于2025-09-23 15:21:01
-
Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition
摘要: Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown ?-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the ?-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.
关键词: Gallium oxide,Surface morphology,Crystallinity,Precursor concentration,Mist chemical vapor deposition,Epitaxial growth,Wide bandgap semiconductors
更新于2025-09-23 15:21:01
-
TiO2 Coated ZnO Nanorods by Mist Chemical Vapor Deposition for Application as Photoanodes for Dye-Sensitized Solar Cells
摘要: In this study, a mist chemical vapor deposition method was applied to create a coating of titanium dioxide particles in order to fabricate ZnO/TiO2 core–shell nanostructures. The thin layers of titanium dioxide on the zinc oxide nanorods were uniform and con?rmed as pure anatase phase. The morphological, structural, optical and photoluminescence properties of the ZnO/TiO2 core–shell structures were in?uenced by coating time. For instance, the crystallinity of the titanium dioxide increased in accordance with an increase in the duration of the coating time. Additionally, the thickness of the titanium dioxide layer gradually increased with the coating time, resulting in an increased surface area. The transmittance of the arrayed ZnO/TiO2 core–shell structures was 65% after 15 min of coating. The obtained ZnO/TiO2 core–shell nanostructures demonstrated high potentiality to serve as photoanodes for application in dye-sensitized solar cells.
关键词: chemical bath deposition,titanium dioxide,core–shell nanorods,mist chemical vapor deposition,zinc oxide
更新于2025-09-12 10:27:22