[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - Crystal Growth and Optical Property of GaN Nanowire Cores and GaInN/GaN Multi-Quantum Shells Grown by Metalorganic Vapor Phase Epitaxy

摘要： An n-GaN nanowire and a GaInN/GaN multi-quantum shell (MQS) were uniformly grown by the continuous flow mode MOVPE with the optimal growth condition. Although the extended defect-free crystal was successfully grown, the MQS may contain point defects acting as the nonradiative recombination centers. The AlGaN underlying shell was found to be effective point defect trap to improve the optical property of the MQS.