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Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties
摘要： Over the past couple of decades, extensive research has been conducted on silicon (Si) based solar cells, whose power conversion e?ciency (PCE) still has limitations because of a mismatched solar spectrum. Recently, a down-shifting e?ect has provided a new way to improve cell performances by converting ultraviolet (UV) photons to visible light. In this work, caesium lead bromide perovskite quantum dots (CsPbBr3 QDs) are synthesized with a uniform size of 10 nm. Exhibiting strong absorption of near UV light and intense photoluminescence (PL) peak at 515 nm, CsPbBr3 QDs show a potential application of the down-shifting e?ect. CsPbBr3 QDs/multicrystalline silicon (mc-Si) hybrid structured solar cells are fabricated and systematically studied. Compared with mc-Si solar cells, CsPbBr3 QDs/mc-Si solar cells have obvious improvement in external quantum e?ciency (EQE) within the wavelength ranges of both 300 to 500 nm and 700 to 1100 nm, which can be attributed to the down-shifting e?ect and the anti-re?ection property of CsPbBr3 QDs through the formation of CsPbBr3 QDs/mc-Si structures. Furthermore, a detailed discussion of contact resistance and interface defects is provided. As a result, the coated CsPbBr3 QDs are optimized to be two layers and the solar cell exhibits a highest PCE of 14.52%.
关键词： down-shifting e?ect,solar cell,anti-re?ection property,caesium lead bromide perovskite quantum dots (CsPbBr3 QDs),multicrystalline Si (mc-Si)
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Outdoor Performance of PV Technologies in Simulated Automotive Environments
摘要： GaAs, monocrystalline Si, and multicrystalline Si modules were tested in a configuration designed to simulate car-roof-integrated mounting. The increase in module temperature above ambient was similar for the four Si modules, but less (~76%) for the GaAs modules. Local temperatures within each module were strongly dependent on the optical properties of the back sheet. The lower operating temperature combined with smaller temperature coefficient of the GaAs modules resulted in higher performance ratios for the GaAs modules even for ambient temperature < 25°C. The quantification of the relative performance of the modules in a thermal environment relevant to implementation in vehicles provides information for the selection of PV modules for this emerging application.
关键词： monocrystalline Si,GaAs,performance ratios,module temperature,automotive environments,multicrystalline Si,PV technologies
更新于2025-09-19 17:13:59