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oe1(光电查) - 科学论文

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?? 中文(中国)
  • [IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Nonlinear Optics of Multiferroic Materials

    摘要: Multiferroics, that is, materials with a coexistence of long-range magnetic and electric order have been attracting tremendous interest because of pronounced coupling effects between magnetic and electric properties that may be the basis for novel devices in which a magnetization is controlled by an electric voltage rather than by energy-intensive electric-current-driven magnetic fields. For monitoring as well as controlling the magnetoelectric coupling, it is essential to have simultaneous access to the magnetic and electric phase of a multiferroic. Only then, the spatial relation between the magnetic and electric domain structures and their response to external perturbations like applied magnetic or electric fields can be studied. Nonlinear optics is particularly well suited for this purpose. The simplest nonlinear optical process is second harmonic generation (SHG) (cid:650) doubling of the frequency of a light wave in a material. SHG is a very symmetry-sensitive process. Any reduction of the symmetry of the frequency-doubling medium can lead to new SHG contributions. Since all types of ferroic order reduce the point group symmetry, SHG can be used as background-free probe of the occurring order. In general, the magnetic and the electric order of a multiferroic change symmetry in different ways so that they are represented by different SHG contributions. These are readily separated by polarization filters so that SHG is an ideal tool to observe the coexistence and correlation between the ferroic phases and their domains in a single experiment. Polarization-dependent SHG spectroscopy and imaging experiments are therefore ideal for analysing the magnetoelectric correlation in a broad variety of multiferroic materials. Some of the most important achievements of nonlinearoptics on multiferroics are: (cid:120) Detection of a coupling between antiferromagnetic and ferroelectric order in hexagonal manganites that occurs in the domain walls rather than in the domains. The result anticipated the current interest in domain walls as functional oxide interfaces [1]. (cid:120) A coupling between magnetic and electric domains in TbMnO3 sustained even across a first-order (cid:120) phase transition [2]. Inversion of a multiferroic domain pattern: The direction of the magnetic or electric order parameter of a multiferroic is reversed across the entire sample, but the domain patterns such is retained [3]. (cid:120) Reversal of a multiferroic domain state without application of external DC fields, just by light [4]. (cid:120) In-situ tracking of the emergence of ferroic order in multiferroic oxide thin films by monitoring the formation of the ordered state by SHG during growth [5]. Optical access in all these experiments involves lasers emitting light pulses of either 100 fs or 5 ns. The laser light can be used to monitor the multiferroic order by nonlinear optics but also, prior to that, to manipulate the ordered state by with an intense pump light beam and analyse the ensuing dynamics. In view of the versatility of the optical access to multiferroics and the generality of the symmetry-based approach to the detection of ferroic phases, it is to be expected that the field of nonlinear optics on multiferroics will continue to develop at the highest speed.

    关键词: magnetoelectric coupling,multiferroic materials,second harmonic generation,Nonlinear optics

    更新于2025-09-11 14:15:04

  • Local insight into the La-induced structural phase transition in multiferroic BiFeO3 ceramics by X-ray absorption fine structure spectroscopy

    摘要: Substitution of bismuth by rare-earth (RE) ions is of great technological importance to develop room-temperature BiFeO3-based multiferroic materials. Despite this interest, many fundamental properties and the structure-property correlations of RE-doped BiFeO3 remain poorly understood. Here we report a systematical experimental and theoretical exploration on the structural phase transition in Bi1-xLaxFeO3 (0 ≤ x ≤ 0.2) ceramics. By using x-ray absorption fine structure spectroscopy, we for the first time show that the La3+ dopants in fact substitute the Bi site of a secondary nanosized particles with orthorhombic Pbam symmetry instead of the long-believed parental rhombohedral R3c phase at all La3+ doping concentrations (0.001 ≤ x ≤ 0.2). This finding is further supported by complementary studies of transmission electron microscopy and thermodynamic preference, and it casts serious challenges on the prevailing assumption of La substitution on the Bi3+ site in R3c structure when x ≤ 0.1 as well as the previously proposed origin of enhanced functional properties based on morphotropic phase boundary. This new insight may ignite a revival on exploring the underlying multiferroic mechanisms in BiFeO3-based materials and facilitate the bottom-up design of novel multifunctional devices.

    关键词: XAFS,BiFeO3,structural phase transition,La doping,multiferroic materials

    更新于2025-09-04 15:30:14

  • Current-driven magnetization switching in ferromagnetic bulk Rashba semiconductor (Ge,Mn)Te

    摘要: Multiferroic materials with both ferroelectric and ferromagnetic orders provide a promising arena for the electrical manipulation of magnetization through the mutual correlation between those ferroic orders. Such a concept of multiferroics may expand to semiconductor with both broken symmetries of spatial inversion and time reversal, that is, polar ferromagnetic semiconductors. Here, we report the observation of current-driven magnetization switching in one such example, (Ge,Mn)Te thin films. The ferromagnetism caused by Mn doping opens an exchange gap in original massless Dirac band of the polar semiconductor GeTe with Rashba-type spin-split bands. The anomalous Hall conductivity is enhanced with increasing hole carrier density, indicating that the contribution of the Berry phase is maximized as the Fermi level approaches the exchange gap. By means of pulse-current injection, the electrical switching of the magnetization is observed in the (Ge,Mn)Te thin films as thick as 200 nm, pointing to the Rashba-Edelstein effect of bulk origin. The efficiency of this effect strongly depends on the Fermi-level position owing to the efficient spin accumulation at around the gap. The magnetic bulk Rashba system will be a promising platform for exploring the functional correlations among electric polarization, magnetization, and current.

    关键词: anomalous Hall effect,ferromagnetic semiconductors,Rashba-Edelstein effect,magnetization switching,multiferroic materials

    更新于2025-09-04 15:30:14