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[IEEE 2019 European Space Power Conference (ESPC) - Juan-les-Pins, France (2019.9.30-2019.10.4)] 2019 European Space Power Conference (ESPC) - Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells
摘要： Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.
关键词： GaInNAsSb,dilute nitride,molecular beam epitaxy,multijunction solar cell
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - High-Efficiency InAs-InGaAs Quantum Dash Solar Cells Developed Through Current Constraint Engineering
摘要： In principle, quantum-dot intermediate band solar cell (QD-IBSC) operates at a higher current density than a III-V multijunction solar cell (MJSC). Due to this inherent property, heat management becomes important when it is operated under a high concentrated illumination. In this work, we propose one way to circumvent this issue, where a wide bandgap cell is placed on top of QD-IBSC, which acts as a current constraint cell, but instead leads to a higher VOC. We demonstrate a 32.1% efficiency under 225 suns with a bonded InGaP/GaAs widegap cell // InAs-InGaAs QDSC configuration.
关键词： wide bandgap cell,efficiency,VOC,III-V multijunction solar cell,concentrated illumination,quantum-dot intermediate band solar cell,MJSC,QD-IBSC,current constraint cell,heat management
更新于2025-09-19 17:13:59
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Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations
摘要： An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light current–voltage characteristics at various concentration ratios of incident light and the dependence of the open-circuit voltage on the photogenerated current were analyzed. It was shown that the anomaly is observed due to the tunnel diode connected back-to-back between the GaInP and GaAs subcells. This diode absorbs photons that pass across the GaInP layers and creates a counter photovoltage.
关键词： tunnel diode,multijunction solar cell,photovoltaic characteristics,concentrated solar light,counter electromotive force,current–voltage characteristics
更新于2025-09-16 10:30:52
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Developing Methods for Wet Chemical Etching of a Separation Mesa Structure during Creation of Multijunction Solar Cells
摘要： The postgrowth processing of mesa structures for multijunction solar cells based on GaInP/GaInAs/Ge heterostructure has been studied. Methods of wet chemical and electrochemical etching are considered, and a technology of forming a separation mesa structure is proposed that ensures improved surface quality and profile of the side wall of a mesa for heterostructures with various compositions of layers.
关键词： multijunction solar cell,etching,mesa structure,heterostructure
更新于2025-09-16 10:30:52
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[IEEE 2019 European Space Power Conference (ESPC) - Juan-les-Pins, France (2019.9.30-2019.10.4)] 2019 European Space Power Conference (ESPC) - Space III-V Multijunction Solar Cells on Ge/Si virtual substrates
摘要： Virtual substrates based on thin Ge layers on Si substrates by direct deposition have recently achieved high quality. In this work, their application as low cost, removable substrates for the growth of high efficiency, lightweight and flexible multijunction solar cells for space applications is analyzed. Experimental Ge single-junction solar cells and GaInP/Ga(In)As/Ge triple-junction solar cells using the Ge/Si virtual substrate as an active bottom junction (being the Si inactive), are implemented using medium quality Ge/Si virtual substrates with a 5 μm Ge layer thickness. A lower quality in the Ge material, as compared to standard substrates, but enough carrier collection efficiency for a standard triple-junction, are shown. The expected formation of cracks during growth, due to the large thermal expansion coefficient mismatch with the Si substrate, is confirmed, and is found to be a major limiting factor for the performance of the solar cells. Strategies such as thinning the Ge + III-V structure and minimizing the thermal cycling during growth are discussed. Using an embedded porous Si layer to serve as buffer for the strain is being investigated. This porous layer could also serve as sacrificial layer for high throughput mechanical epitaxial lift-off in the manufacturing of lightweight and flexible multijunction cells. These embedded porous Si layers need to be engineered for optimum performance and compatibility with the Ge and III-V deposition processes.
关键词： lightweight solar cell,III-V multijunction solar cell,porous silicon,virtual substrate
更新于2025-09-12 10:27:22
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Modeling and design for low‐cost multijunction solar cell via light‐trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction
摘要： To realize high efficiency in parallel with low cost, a light‐trapping rear texture was proposed to be implemented in substrate‐free thin‐film multijunction (MJ) cells. A detailed‐balance theory was formulated taking account of the finite light absorption in thin subcells. Such presented absorption model is general and useful to optimize the subcell thickness for MJ solar cells with light‐trapping design. It is applied for InGaP/GaAs/InGaAs triple‐junction solar cells to simulate subcell photocurrents and to obtain the current‐matching (minimum requisite) subcell thicknesses combinations. Furthermore, the detailed‐balance conversion efficiency was estimated for both radiative limit and the cases with below‐unity internal radiative efficiency. For InGaP/GaAs/InGaAs MJ cells with InGaP subcell thickness less than 600 nm, adding a random‐textured rear reflector can enhance light absorption so significantly that over 90% of InGaAs‐cell thickness and even 50% of GaAs‐cell thickness would be cut without any penalty in conversion efficiency, compared with the subcell thicknesses in traditional MJ cells with flat rear reflectors. Additionally, the thickness combination, (InGaP, GaAs, and InGaAs) = (450 nm, 333 nm, and 26 nm), is recommended to achieve both high conversion efficiency and low material cost. This work provides a very important theoretical guidance for the development on low‐cost and high‐efficiency MJ devices.
关键词： detailed‐balance limit,low cost,multijunction solar cell,texture surface,light trapping
更新于2025-09-12 10:27:22