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Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors
摘要： Nanoporous GaN distributed Bragg re?ectors (DBRs) with a high re?ectivity (* 92%), which was fabricated via a doping selective electrochemical etching process, were used to deposit Eu-doped b-Ga2O3 ?lms by using pulsed layer deposition. Structural and chemical composition analyses indicated that the 900 (cid:3)C-annealed ?lm in air has the best crystalline quality and highest photo-luminescence (PL) ef?ciency. The epitaxial relationship between the b-Ga2O3: Eu ?lm and DBR mirror was Ga2O3 (201)kGaN (0001) with Ga2O3 [010]kGaN [1210]. Compared to the Eu:Ga2O3 ?lm on reference template, the 900 (cid:3)C-an-nealed ?lm on the DBR mirror presented a * 20-fold enhancement in the PL emission. The performance enhancement was attributed to light-coupling enhancement of the buried DBR mirror. Because of the good electrical properties of the annealed ?lms, the fabricated DBR substrates pave the way for devel-oping a range of rare-earth-doped Ga2O3 optoelectronic devices.
关键词： Ga2O3/Eu,optoelectronic properties,pulsed layer deposition,distributed Bragg re?ectors,nanoporous GaN
更新于2025-09-23 15:21:01
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Light Emission by Nanoporous GaN Produced by a Top-Down, Nonlithographical Nanopatterning
摘要： Temperature-dependent photoluminescence (PL) spectroscopy is carried out to probe radiative recombination and related light emission processes in two-dimensional periodic close-packed nanopore arrays in gallium nitride (np-GaN). The arrays were produced by nonlithographic nanopatterning of wurtzite GaN followed by a dry etching. The results of Raman spectroscopy point to a small relaxation of the compressive stress of ~0.24 GPa in nanoporous vs. bulk GaN. At ~300 K, the PL emission is induced by excitons and not free-carrier interband radiative recombinations. An evolution of the emission spectra with T is con?rmed to be mainly a result of a decay of nonexcitonic PL emission and less of spectral shifts of the underlying PL bands. A switching of excitonic PL regime observed experimentally was analyzed within the exciton recombination-generation framework. The study provides new insights into the behaviors and physical mechanisms regulating light emission processes in np-GaN, critical to the development of nano-opto-electronic devices based on mesoscopic GaN.
关键词： photoluminescence,nonlithographic nanopatterning,Raman spectroscopy,nanoporous GaN,excitonic emission
更新于2025-09-09 09:28:46