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Investigation of local geometrical structure, electronic state and magnetic properties of PLD grown Ni doped SnO2 thin films
摘要： We have investigated the ferromagnetic behavior, electronic states and local geometrical structure of Ni (2 and 10 at %) doped SnO2 thin films. The films were successfully fabricated with the help of pulsed laser deposition (PLD) technique on Si (100) substrate under ultrahigh vacuum (UHV) condition. X-ray diffraction (XRD) results revealed the single phase character of SnO2 rutile lattice structure with P42/mnm space group. The inclusion of Ni ions into SnO2 matrix induced oxygen vacancy (Vo), enhanced the distortion in octahedral local symmetry and reduced the oxidation state of the host Sn4+ (SnO2) to Sn3+ (Sn2O3) these details have been estimated by Raman scattering, Near edge X-ray absorption fine structure (NEXAFS) spectra at Ni L3,2 and O K edges. Further quantitative details on the local geometrical structure around Ni ions were obtained via fitting the experimental Fourier transforms EXAFS spectra |X(R)| with FEFF6 code. The magnetization measurements performed at room temperature (RT) infers that the observed magnetic behavior of the films seems to be relevant to the same crystal growth condition (UHV) and might not be limited directly to the Ni dopant concentrations. The FM signal and the role of surface defects have been discussed based spin-split impurity band difference in the saturation moments even with increase the Ni content. Hence, the similarity in Ni doped SnO2 films displayed ferromagnetic (FM) signal, and there was no significant Ferromagnetism etc. percolation mechanism.
关键词： surface defects,XANES spectra,SnO2 nanostructured thin film,PLD,local symmetry,XRD,NEXAFS
更新于2025-09-23 15:22:29
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Synthesis of Nanostructured PLD AlN Films: XRD and Surface-Enhanced Raman Scattering Studies
摘要： Thin films of AlN on Si were fabricated by pulsed laser deposition in vacuum and in nitrogen ambient, and at laser repetition rate of 3 Hz or 10 Hz. The films were nanostructured according to the X-ray diffraction analysis and TEM imaging. Films deposited in vacuum were polycrystalline with hexagonal AlN phase and with columnar structure, while films deposited in nitrogen were predominantly amorphous with nanocrystallites inclusions. The Al-N phonon modes in the surface-enhanced Raman spectra were largely shifted due to stress in the films. Phonon mode of Al-O related to film surface oxidation is observed only for deposition at low pressures.
关键词： microstructure,nanostructured thin film,Transmission electron microscopy,pulsed laser deposition,Aluminium nitride,Raman spectroscopy,X-ray diffractometry
更新于2025-09-19 17:15:36