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AIP Conference Proceedings [Author(s) 6TH INTERNATIONAL CONFERENCE ON PRODUCTION, ENERGY AND RELIABILITY 2018: World Engineering Science & Technology Congress (ESTCON) - Kuala Lumpur, Malaysia (13–14 August 2018)] - Characterization of tin oxide (SnO2) nanostructures prepared by thermal oxidation
摘要： Tin oxide (SnO2) nanocrystals and nanowires were successfully synthesized on Si (100) substrate by thermal oxidation method at different oxidation temperatures 450 oC, 500 oC and 550 oC. The synthesized nanostructures were characterized by FESEM, Uv-Vis and Photoluminescence spectrum. The morphology of the samples was confirmed by FESEM. Meanwhile, the optical properties were obtained from Uv-Vis and photoluminescence (PL) spectrum. Tin oxide nanowires were obtained at oxidation temperatures 500 oC with energy band gaps of 1.21 eV. PL emission spectra results showed that tin oxide nanowires at 500 oC exhibit first maximum peak at 450 nm (2.76 eV), second maximum peak at 500 nm excitation (2.48 eV) and third maximum highest peak at 650 nm excitation (1.91 eV). In this work, we investigate the right oxidation temperature to synthesize tin oxide nanowires. The structural and optical properties of the synthesized tin oxide thin film can be improve by oxidation temperature.
关键词： Photoluminescence,FESEM,nanowires,Tin oxide,thermal oxidation,Uv-Vis,SnO2,nanocrystals
更新于2025-09-09 09:28:46
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Heterogeneity governs diameter-dependent toughness and strength in SiC nanowires
摘要： Using a combination of density functional theory and molecular dynamics simulations, this paper reveals the atomistic origin of diameter-dependent extreme mechanical behavior of [111] 3C-SiC nanowires obtained from an energy-based framework. Our results suggest that heterogeneity in atomic stress and variations in diameter-dependent potential-energy density have a profound impact on extreme mechanical properties in the nanowires. The heterogeneity in stress evolves from the nonuniform bond lengths mediated by low coordinated surface atoms—and it penetrates the entire cross section in thinner nanowires and constitutes the atomistic basis for their large reduction in fracture strain, toughness, and strength. Although stress heterogeneity is substantially higher in ultrathin nanowires, its intensity drops and saturates rapidly in larger nanowires following a nonlinear dependence on diameter. The maximum stress heterogeneity in a cross section localizes crack nucleation at the core in ultrathin nanowires but near the surface in larger nanowires. Moreover results show that stiffness, toughness, strength, and fracture strain of the nanowires increase nonlinearly with increasing diameter and saturate at a lower value compared to bulk SiC. In addition to resolving wide discrepancies in the reported values of the ?rst-order elastic modulus in SiC nanowires, the ?ndings highlight heterogeneity as a critical factor for inducing diameter-dependent extreme mechanical behavior in brittle nanowires.
关键词： heterogeneity,atomic stress,strength,toughness,potential-energy density,fracture strain,SiC nanowires,diameter-dependent,mechanical properties
更新于2025-09-09 09:28:46
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[Semiconductors and Semimetals] Semiconductor Nanowires I - Growth and Theory Volume 93 || Hybrid III–V/Silicon Nanowires
摘要： The success of the semiconductor industry originates from the ability to precisely tune the electronic properties of semiconductor materials. Different approaches are used to enhance the functionality of semiconductors, such as impurity doping, alloying, heterostructuring, and straining. All these methods are based on the addition of chemical elements to a pure semiconductor. An important example is the invention of the GaAs/AlGaAs heterostructure, which has enabled the development of laser diode and high-electron-mobility transistor (HEMT). In this chapter, we will discuss the combination of two different classes of semiconductors, group IV, like Si and Ge, and group III–V, like GaAs and InP. We will focus on a relatively new materials system, i.e., nanowires (NWs), in which strain can be effectively relieved at the surface due to the small dimensions, therefore relaxing the requirements on lattice matching. This system thus offers enhanced flexibility over the conventional layered structures in combining different semiconductor materials. These new combinations may boost the performance of already widely explored device concepts, such as transistors and solar cells, but may also open new applications, such as in quantum information technology. After a discussion on the different challenges related to the combination of Si and III–V semiconductors, we will discuss the growth of III–V nanowires on group IV substrates, and then focus on the growth of heterostructures within nanowires in the radial and axial directions.
关键词： silicon,III-V nanowires,semiconductor,epitaxial growth,heterostructures
更新于2025-09-09 09:28:46
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GaN metal-oxide-semiconductor devices with ZrO2 as dielectric layers
摘要： P-type GaN metal oxide semiconductors (MOS) with ZrO2 dielectrics have been fabricated. Here, H2O and O3 were selected as oxidizers for ZrO2 growth by atomic layer deposition. The MOS devices with O3 oxidant demonstrated a smaller ?at band voltage than that with H2O oxidant. A Ga2O3 interlayer was formed between GaN and O3-grown ZrO2, which can e?ectively decrease interfacial state density to 1.5 × 1011 cm?2. Meanwhile, the innovation of AlZnO (AZO)/Ag nanowires (AgNWs)/AlZnO composite electrodes can further decrease the ?at band voltage to about a half compared to that with traditional Cr/Au electrodes and superior electrical performance was achieved.
关键词： Silver nanowires,MOS,ZrO2,Atomic layer deposition,p-GaN
更新于2025-09-09 09:28:46
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Improved Electrical Stability of Silver NWs Based Hybrid Transparent Electrode interconnected with Polymer Functionalized CNTs
摘要： Silver nanowires have high potential to replace the conventional transparent conductors in many applications. However, the electrical instability of silver nanowires especially when heated as a result of electrical current passage cause the failure of this type of conductors and thus may limit their uses in many applications. In this study, a novel approach based on interconnecting the individual nanowires with conductive polymer wrapped carbon nanotubes is examined to improve the stability of silver nanowires network. The hybrid electrode with modified carbon nanotubes shows highly stable electrical performance in comparison to silver nanowires electrode. Under continuous electrical stress, slight variation in the sheet resistance of the hybrid electrode was noticed and was about two order of magnitude less than that of silver nanowires electrode. Moreover, the thermal studies reveal that the hybrid electrode stabilizes at much lower temperature than that of silver nanowires electrodes. The findings show that the proposed approach is very promising to overcome the failure issue of silver nanowires and to increase the feasibility of their use for device applications.
关键词： Silver nanowires,optical properties,electrical stability,transparent conductor,Carbon nanotubes
更新于2025-09-09 09:28:46
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Transparent AgNW-CoNPs conducting film for heat sensor
摘要： We have fabricated transparent conducting film (TCF) from silver nanowires (AgNWs) decorated with cobalt nanoparticles (CoNPs) on a thermoplastic polyimide (PI) substrate by solution processed spin-coating approach. AgNWs and CoNPs were produced by modified polyol methods using poly(N-vinylpyrrolidone) PVP (Mw ≈ 1,300,000). The concentration ratio of AgNWs to CoNPs was varied as 1:0, 0.7:0.3, 0.5:0.5, and 0.3:0.7 (in wt%). The results show that increasing the AgNWs/CoNPs concentration up to 0.5: 0.5 raises the TCF temperature interestingly to 350oC before the Joule heating breakdown occurs at 20 V. However, at a higher content of CoNPs (AgNWs: CoNPs = 0.3:0.7), due to the excessive entanglement of CoNPs in the AgNW network, the temperature further drops down to 65oC. The optimum transmittance (94%), sheet resistance (52 Ω/□), and thermal stability were obtained at a concentration ratio of AgNWs: CoNPs = 0.5:0.3. The stabilization mechanism is also suggested for the extremely high temperature obtained in this work.
关键词： hybrid nanowires,optical transmittance,heat sensing devices,transparent film conductor,cobalt nanoparticles
更新于2025-09-09 09:28:46
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[Nanostructure Science and Technology] Nanowire Electronics || Nanowire-Based Transparent Conductive Electrodes
摘要： Transparent conductive electrodes (TCEs) are important segments in many optoelectronic devices, such as light-emitting diodes (LEDs), liquid crystal displays (LCDs), thin-film transistors (TFTs), touch screens, smart windows, and solar cells. At the end of the 1960s, the industrial demand for transparent conductive oxides (TCOs) started since Sn and In2O3 were used in infrared light filters on low-pressure sodium discharge lamps in order to improve the lamp efficiency. ITO exhibits excellent electrical conductivity and optical transparency which widen its applications in various optoelectronic devices. Among different kinds of emerging technologies, one-dimensional (1-D) nanostructures such as nanowires, nanorods, and nanotubes provide high potential because of their special properties related to high aspect ratio and good crystallinity. 1-D nanostructures not only provide a direct conduction pathway for enhancing charge collection but also increase the surface area which also improves the charge collection. ITO nanostructures with good performance have been successfully synthesized via physical vapor transportation methods. In these ITO nanostructures, ITO nanowires are promising in various applications in nanoscale electronic and optoelectronic devices such as dye-sensitized solar cells (DSSCs) and LEDs.
关键词： Transparent conductive electrodes,TCO,ITO,nanowires,optoelectronic devices
更新于2025-09-09 09:28:46
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Fabrication of Cobalt Oxide/MWCNTs/ZnO Nanowires/Zn Plate with Enhanced Photocatalytic Activity in Both Chemical and Microbial Systems
摘要： A series of cobalt oxide/MWCNTs/ZnO NWs/Zn photocatalyst plates were successfully fabricated by electrochemical deposition of cobalt oxide and functionalized Multi-walled carbon nanotubes (f-MWCNTs) onto previously synthesized ZnO nanowires/Zn plates. The fabricated plates were examined with regard to the oxidative decomposition (acetic acid), antibacterial [Escherichia coli (E. coli) bacteria] and antifungal [Candida albicans (C. albicans)] activity under UV light irradiation and in dark. ZnO NWs/Zn modified plates by cobalt oxide and MWCNTs resulted in enhanced photocatalytic activities in both chemical and microbial systems. CO2 evaluation tests showed that the Cobalt oxide/MWCNTs/ZnO NWs/Zn could completely decompose bacterial cells under irradiation, possibly owing to the enhanced formation of reactive oxygen species (ROSs). Besides, it was found that the surface properties of photocatalyst plates are more vital for the antimicrobial properties due to a larger interface between microorganisms and plates. Therefore, it is expected that ternary Cobalt oxide/MWCNTs/ZnO NWs/Zn photocatalysts should exhibit broad antimicrobial properties. In addition, the Cobalt oxide/MWCNTs/ZnO NWs/Zn exhibited the highest photocatalytic activity in oxidative decomposition of acetic acid, probably due to the lower electron/hole recombination rate. Based on the obtained results, a photocatalytic and an antimicrobial mechanism for the microorganism degradation and acetic acid decomposition over Cobalt oxide/MWCNTs/ZnO NWs/Zn were recommended and discussed.
关键词： Photocatalysis,ZnO nanowires/Zn plates,Water treatment,Disinfectants,Organic decomposition
更新于2025-09-09 09:28:46
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Gallium Oxide || Synthesis, optical characterization, and environmental applications of β-Ga2O3 nanowires
摘要： In this chapter, we present the synthesis, optical characterization, and environmental applications of the β-Ga2O3 nanowires. The gap-state and near-band-edge transitions of β-Ga2O3 nanowires were identified and studied. The defects states play an important role in their optical emission and photocatalytic property. Owing to its various interesting properties such as wide bandgap, chemical and thermal stability, robust defect states, large surface to volume ratios, β-Ga2O3 nanowires are very promising in potential applications in optoelectronic, environmental applications, and fundamental research in the future.
关键词： wide-band-gap semiconductors,synthesis,optical characterization,photocatalytic activity,β-Ga2O3 nanowires,environmental applications
更新于2025-09-09 09:28:46
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Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope
摘要： Three-point bending tests were performed on double-anchored, ?110? silicon nanowire samples in the vacuum chamber of a scanning electron microscope (SEM) via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10 ??m tall supports through a top-down fabrication approach involving a series of etching processes. The exact dimension of wire cross sections was determined by transmission electron microscopy (TEM). Conducting the experiments in an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which could then be taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for ?110? silicon. Hence, test results neither show any size effect nor show evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. The results demonstrate the potential of the developed nanowire fabrication approach for the incorporation in functional micromechanical devices.
关键词： SEM,silicon nanowires,three-point bending tests,finite element modeling,elastic behavior
更新于2025-09-09 09:28:46