[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Electrical degradation behavior in metal oxide thin film transistor under negative bias-illumination stress

摘要： The electrical degradation behavior in metal oxide thin film transistor (TFT) under negative bias-illumination stress (NBIS) is one of the biggest obstacles for its applications in flat panel display. In order to solve this issue, Sr and N are doped in In2O3 thin film and significantly improve the NBIS stability of In2O3 TFT. In the addition, degradation in electrical performance caused by Sr doping. The XPS of SrInON thin film is tested to prove the reduction of the oxygen vacancy. the doping of N can also reduce