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Ratiometric fluorometric determination of silver(I) by using blue-emitting silicon- and nitrogen-doped carbon quantum dots and red-emitting N-acetyl-L-cysteine-capped CdTe quantum dots
摘要： A ratiometric fluorometric assay for silver(I) is described. The method makes use of a dually emitting quantum dot hybrid, which is composed of (a) blue-fluorescent silicon- and nitrogen-doped carbon quantum dots (CQDs), and (b) of red-emitting CdTe quantum dots (QDs) capped with N-acetyl-L-cysteine. The red-emitting CdTe QDs undergo strong and specific quenching by Ag(I), whereas the blue-emitting N,Si-CQDs are not quenched. The two kinds of QDs are mixed and used as a ratiometric fluorescent probe. A linear relationship is found between the log of intensities [(I608/I441)0/(I608/I441)] and the concentration of Ag(I) in the range from 5.0–1000 nM, and the limit of detection (at S/N = 3) is 1.7 nM. Possible interferents (including 17 general metal ions, 12 anions and fulvic acid) do not interfere with the determination. The assay was successfully used for the determination of Ag(I) in surface water and wastewater samples. The fluorescence quenching mechanism of the ratiometric assay system was also discussed in detailed.
关键词： Fluorescence quenching mechanism,Surface water,Nitrogen-doped carbon dots,Silver ions,Silicon-doped carbon dots,Wastewaters,3-Aminopropyltriethoxysilane functionalized carbon dots,Quenching efficiency,Dual-emission quantum dots hybrid,Fluorescent probe
更新于2025-09-19 17:13:59
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Role of nitrogen doped carbon quantum dots on CuO nano-leaves as solar induced photo catalyst
摘要： A p-type transition metal oxide, copper oxide (CuO) was modified with nitrogen doped carbon quantum dots (NCQDs) to fabricate an effective CuO/NCQDs solar driven photo catalyst. The fabrication of single phase monoclinic CuO was confirmed by XRD. SEM images showed the leaf like morphology for CuO which appeared rough and densely packed in CuO/NCQDs composites. TEM images of CuO/NCQDs shows slightly distorted nano-leaves with NCQDs dispersed on them. HRTEM of CuO/NCQDs shows fringes with characteristic planes confirming that the addition of NCQDs has not distorted the crystal structure of CuO. SAED of CuO/NCQDs further confirms the crystalline nature of the as synthesized composite photo catalyst by exhibiting bright diffraction rings. These results further supported the XRD data. EDS spectra of NCQDs and CuO/NCQDs confirm the formation of pure nitrogen doped carbon quantum dots and Cu, N, C and O atoms confirming that NCQDs are well incorporated on CuO Nano leaves. UV-Vis spectra showed a slight increase of band gap energies due to quantum confinement effects. PL spectra exhibited decreased photoluminescence intensity indicating suppression of recombination rate. The developed photocatalyst was applied for the degradation of harmful dye methyl orange. The composite catalyst showed superior degradation efficiency as compared to pure CuO nano-leaves attributed to enhanced visible light absorption and better charge separation ability due to introduction of NCQDs.
关键词： solar light catalyst,nitrogen doped quantum dots,charge separation efficiency,quantum confinement effect,CuO nano-leaves
更新于2025-09-19 17:13:59
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Layer by Layer Self-Assembly of Hollow Nitrogen-Doped Carbon Quantum Dots on Cationized Textured Crystalline Silicon Solar Cells for Efficient Energy Down-Shift
摘要： Enhancing the efficiency of crystalline silicon solar cell (c-Si SC) by coating the energy shifting layer of quantum dots (QDs) is a recent approach to efficiently utilize the high energy spectrum of light. Carbon QDs are an attractive candidate for such applications, however, small Stokes shift and non-uniform coating due to high aggregation are the bottlenecks to fully utilize their potential. For the purpose, here we propose a layer by layer self-assembled uniform coating of ecofriendly red-emissive hollow nitrogen-doped carbon QDs (NR-CQDs), as an efficient energy-down shifting layer. A unique hollow and conjugated structure of NR-CQDs was designed to achieve a large Stokes shift (UV excited - red emission), with a quantum yield (QY) comparable to Cd/Pb QDs. Highly uniform coating of intrinsically negatively charged NR-CQDs on c-Si SCs was achieved by cationizing the c-Si SC by Bovine serum albumin (BSA), under mildly acidic conditions. By opposite charge assisted self-assembled over-layer, the short-circuit current density (Jsc) and power-conversion efficiency was increased by 5.8%, which is attributed to the large Stokes shift (255 nm) and high QY. Blue-emissive undoped-carbon QDs were synthesized for comparison with the proposed NR-CQDs, to elucidate the significance of the novel proposed structure.
关键词： energy-downshift,crystalline silicon solar cells,layer by layer self-assembly,Nitrogen-doped carbon quantum dots,cationization,photoluminescence
更新于2025-09-19 17:13:59
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Highly transparent nickel and iron sulfide on nitrogen-doped carbon films as counter electrodes for bifacial quantum dot sensitized solar cells
摘要： Semiconductors are widely used as counter electrodes in quantum dot-sensitized solar cells. However, many counter electrode materials have poor conductivity and require tedious post-treatment procedures. Here, our groups develop a highly transparent MS2@N-doped C film materials (M = Ni, Fe) derived from layer-by-layer self-assembly of a M-TCPP film as a counter electrode in bifacial CdS/CdSe quantum dot-sensitized solar cells. Devices based on the MS2@N-doped C films exhibited higher respective front- and reverse-side power conversion efficiencies (i.e., 4.57% and 3.98% for the NiS2@N-doped C film and 3.18% and 2.63% for the FeS2@N-doped C film) than those of Pt-based devices (2.39% and 1.74%). We attribute the outstanding catalytic activity and excellent stability of the MS2@N-doped C film materials to the homogeneous sulfides within the transparent nitrogen-doped C film, as confirmed by electrochemical analyses, including cycle voltammetry, impedance spectroscopy and Tafel-polarization measurements.
关键词： Nitrogen doped C film,Metal sulfide,Quantum dot-sensitized solar cells,Counter electrode
更新于2025-09-19 17:13:59
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Bionanosensor based on N-doped graphene quantum dots coupled with CoOOH nanosheets and their application for in vivo analysis of ascorbic acid
摘要： Herein, we employ 3D nitrogen-doped porous graphene frameworks (3D NPG) as raw material to prepare emissive nitrogen doped graphene quantum dots (r-NGQDs) via chemical oxidation method. The as-prepared fluorescent r-NGQDs was integrated with CoOOH nanosheets to construct a sensing platform for in vivo ascorbic acid (AA) analysis. Initially, the fluorescence emission intensity of r-NGQDs was quenched by CoOOH nanosheets based on the inner filter effect (IFE). Then the quenched intensity of r-NGQDs and CoOOH nanosheets system was enlightened by the addition of AA, since AA could consume CoOOH nanosheets through redox reaction, leading to the release of r-NGQDs and fluorescence restoration. Moreover, the restored fluorescence intensity of r-NGQDs is highly dependent on the concentration of AA which endows them as a quantitative analysis of AA with a limit of detection (LOD) reach up to1.85 μM (n = 3) in aqueous solution. Finally, the as constructed bionanosensor was further employed for in vivo analysis of AA in living rat brain microdialysate with basal value up to 9.4 ± 1.4 μM (n = 3).
关键词： Nitrogen-doped porous graphene,Graphene quantum dots,Ascorbic acid,In vivo,CoOOH nanosheets
更新于2025-09-16 10:30:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Fabrication of High Quality Quantum Emitters in Diamond Nanostructures
摘要： As the field of solid-state quantum engineering matures, it is increasingly necessary to produce quantum emitters with narrow optical transitions and long spin coherence times aligned to nanophotonic structures. The nitrogen-vacancy (NV) defect center in diamond is a well-suited candidate owing to a spin ground state with a long coherence time, nearby nuclear spins for quantum memories, and spin-selective optical transitions allowing for efficient optical spin initialization and readout. We demonstrate an emitter-device alignment technique enabling fabrication of photonic devices registered to NVs. The alignment method relies on autonomously imaging emitters and registering them relative to an on-chip coordinate system. This technique can be performed on a large variety of emitters. The repeatability of this method suggests a spatial accuracy of 50 nm. The ability to navigate a sample autonomously facilitates data collection on a large number of NVs, thus permitting statistical analyses. We utilized this approach to correlate the NV’s host nitrogen isotope with the optical linewidth of the emitter to understand the effects of implantation. As shown in Fig. 1a, the data indicate that the coherent, narrow-linewidth NVs are formed from naturally abundant nitrogen (14N), whereas the implanted nitrogens (15N), on average, yield broader linewidth NVs. The implanted 15NVs also exhibit larger axial and transverse strains suggesting that damage was produced near the emitter. We attribute the broad linewidths of implanted 15NVs to a more volatile local environment generated by local damage resulting from the ion implantation process.
关键词： diamond nanostructures,nanophotonic structures,nitrogen-vacancy center,spin coherence,quantum emitters
更新于2025-09-16 10:30:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Multi-Qubit Registers of Individually Addressable Solid-State Defect Centers
摘要： Mesoscopic ensembles of qubits offer a platform for near-term applications in quantum technologies, as well as for studying many-body physics. Key in exploiting these systems is the ability to coherently control constituent qubits in a manner that leaves the quantum states of neighboring qubits unperturbed. Atom-like emitters in solids have emerged as a promising platform for computing, communications, and sensing. In particular, their long coherence times, coherent optical transitions, and the ability to couple to nearby long-lived nuclear spins make them excellent candidates for building medium-scale registers of coupled qubits. Here, we present progress towards producing and controlling such individually addressable ensembles. Our approach relies on the natural inhomogeneous distribution of optical transitions for solid-state color centers. This distribution allows us to excite individual centers even in tightly-grouped clusters. With this, we first demonstrate super-resolution localization and readout of individual nitrogen vacancy (NV) centers in diamond. We probe a system of three NV centers, demonstrating localization with a mean precision of 0.74 nm. While super-resolution imaging of NV centers has been achieved with other techniques, our approach uniquely allows for individual readout of single NVs in a cluster in a manner that maintains the states of nearby spins. We perform simultaneous control of two spin populations in a cluster of NVs, demonstrating preservation of coherence of one population during the optical readout of another. Lastly, we discuss recent work towards scalable creation of such clusters and techniques for producing systems of coupled spins with various defect centers.
关键词： spin-spin coupling,quantum technologies,super-resolution localization,qubits,solid-state color centers,nitrogen vacancy centers,many-body physics,atom-like emitters
更新于2025-09-16 10:30:52
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Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N<sub>2</sub>-Annealed SiO<sub>2</sub>/4H-SiC(0001) Structures
摘要： We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.
关键词： NO-annealing,N2-annealing,SiO2/SiC interface,XPS,nitrogen profile
更新于2025-09-16 10:30:52
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Electronic Structure and Optical Gain of InNBiAs/InP Pyramidal Quantum Dots
摘要： Dilute bismide alloys and dilute nitride alloys have garnered increasing research interest over the past few years, as it promises increased engineering flexibility in the design of advanced compound semiconductor heterostructure devices. Key device parameters such as lattice constant, bandgap and band offsets can be controlled with greater precision, and this leads to better performance for a wide range of electronic and optoelectronic devices. For dilute nitride alloys, band anticrossing effects are produced due to the coupling of their resonant states with the conduction band states. This lowers the conduction band edge energy. Likewise, the coupling of the resonant states of dilute bismide with the valence band states results in the valence band anticrossing and the valence band edge energy rises. Additionally, the effective bandgap may fall below the spin-orbital-splitting energy, thus inhibiting Auger recombination. This makes them excellent candidates for optoelectronic device applications. In this work, the electronic bandstructure and optical gain of InNBiAs/InP pyramidal quantum dots are investigated using the 16-band k·p model with constant strain. The effective bandgap falls as we increase the composition of nitrogen and bismuth. With an appropriate choice of composition of doped atoms, we can tune the emission wavelength in the range of 2–5μm suitable for mid-infrared device applications. Additionally, we observe the size effect by tuning the size of quantum dot.
关键词： Optical gain,Quantum dot,Dilute bismuth,Dilute nitrogen,Band anticrossing,Size effect
更新于2025-09-16 10:30:52
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Red-emissive nitrogen doped carbon quantum dots for highly selective and sensitive fluorescence detection of the alachlor herbicide in soil samples
摘要： Red-emissive nitrogen doped carbon quantum dots (N-CQDs) were synthesized by a facile and efficient microwave-assisted hydrothermal treatment of p-phenylenediamine (p-PD), and then applied for the highly selective and sensitive fluorescence detection of the alachlor herbicide in soil samples. The synthesized N-CQDs exhibited strong red emission with a 27.6% quantum yield (QY) and high stability. Under the optimized experimental conditions, the as-prepared red-emissive N-CQDs were employed as a fluorescent probe to successfully detect trace alachlor, and their fluorescence presented a good linear decline with the increase of the alachlor concentration from 0.005 to 150 mM with a limit of detection of 0.2 nM. The N-CQDs as a fluorescent probe were used for the detection of alachlor in soil samples with satisfactory recoveries ranging from 86.6–114.3%, indicating that they were a promising fluorescent probe for highly selective and sensitive determination of alachlor.
关键词： soil samples,Red-emissive nitrogen doped carbon quantum dots,fluorescence detection,alachlor herbicide
更新于2025-09-16 10:30:52