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SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity
摘要： SnSe2 field-effect transistor was fabricated based on exfoliated few-layered SnSe2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe2 FET can achieve an on/off ratio as high as ~ 104 within 1 V bias, which is ever extremely difficult for SnSe2 due to its ultrahigh carrier density (1018/cm3). Moreover, the subthreshold swing and mobility are both improved to ～ 62 mV/decade and ~ 127 cm2 V?1 s?1 at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe2 FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.
关键词： Photoconductivity,SnSe2,Field-effect transistor,On/off ratio
更新于2025-09-19 17:15:36
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Two-Mode MoS <sub/>2</sub> Filament Transistor with Extremely Low Sub-Threshold Swing and Record High On/Off Ratio
摘要： With rapid development of integrated circuits, urge requirements for transistor with lower sub-threshold swing (SS) and better contact properties, are needed. To optimize the SS and contact issues, we propose a concept of molybdenum disulfide (MoS2) filament transistor with two-mode. We successfully fabricated the proposed devices in a wafer-scale. Mode I can enable the device with extremely low SS down to 2.26 mV/dec by switching contact filament between on and off while mode II can realize record high on/off ratio 2.6×109 by using filament as quasi-zero dimensional (quasi-0D) contact. Compared to conventional three dimensional (3D) contact, quasi-0D contact using conductive filament improves the current density nearly 50 times. We also built spice model to simulate the electrical behaviors and successfully predict proposed transistor owns extremely low SS in mode I (using abrupt filament formation/rupture) and excellent quasi-0D contact in mode II. The two-mode MoS2 filament transistor can significant improve the SS and contact comparing to those of the state-of-the-art transistors, which has the great potential to boost the development of next generation mainstream transistors.
关键词： sub-threshold swing,molybdenum disulfide,quasi-0D contact,filament transistor,on/off ratio
更新于2025-09-19 17:15:36
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Ultrasensitive Fiber-based ZnO Nanowire Network Ultraviolet Photodetector Enabled by the Synergism of Interface and Surface Gating Effects
摘要： Flexible UV photodetector with high on/off ratio is extremely important for environmental sensing, optical communication and flexible optoelectronic devices. In this work, a flexible fiber-based UV photodetector with ultrahigh on/off ratio is developed by utilizing the synergism between interface and surface gating effects on ZnO nanowire network structure. The synergism of two gating effects is realized by the interplay of surface band bending and the Fermi level through nanowire-network structure, which is proved through the control experiments between ZnO micro/nanowire photodetector and micro/nanowire-junction photodetector, and the corresponding KPFM measurements. The on/off ratio of fiber-based ZnO nanowire-network UV photodetector reaches 1.98×108 when illuminated by 1.0 mW cm?2 UV light, which is 20 times larger than the largest reported result under the same UV illumination. This new UV sensor also has the high resolution to UV light intensity change in nW cm?2 range. Furthermore, when the fiber-based photodetector is curved, it still shows the excellent performance as above. This work gives a new effective route for the development of high-performance UV photodetector or other optoelectronic detection devices.
关键词： ZnO,synergetic gating effects,flexible electronics,UV photodetectors,on/off ratio
更新于2025-09-12 10:27:22
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A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors
摘要： 2D layered materials are an emerging class of low-dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high-performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow-bandgap noble metal dichalcogenide (PtS2) is demonstrated in this study. The few-layer PtS2 field-effect transistor exhibits excellent electronic mobility exceeding 62.5 cm2 V?1 s?1 and ultrahigh on/off ratio over 106 at room temperature. The temperature-dependent conductance and mobility of few-layer PtS2 transistors show a direct metal-to-insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS2 photo detectors with broadband photodetection from visible to mid-infrared and a fast photoresponse time of 175 μs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble-metal dichalcogenides to be applied in high-performance electronic and mid-infrared optoelectronic devices.
关键词： broadband photodetection,PtS2,on-off ratio,field-effect transistors,mobility
更新于2025-09-12 10:27:22