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Flexible engineering of light emission in monolayer MoS <sub/>2</sub> via direct laser writing for multimode optical recording
摘要： Direct laser writing has been proved to be capable for effective modulation of optical and electrical properties of various nanomaterials. In this work, we designed a flexible direct laser writing approach to engineer photoluminescence (PL) properties of monolayer MoS2 and present its potential application in optical recording. PL spectra evolution of monolayer MoS2 under continuous-wave laser writing has been explored, where its PL energy can be precisely controlled by changing the writing time. This feature enables a multimode optical recording with spectral contrast in monolayer limit materials for high-capacity data storage technologies. Here, we constructed a proof-of-principle multimode optical recording on monolayer MoS2 based on the PL wavelength division multiplexing scheme and discussed the relevant challenges for practical applications. Our flexible approach with a mask-free feature and high spatial resolution is promising for applications in two-dimensional material-based information storage and optoelectronic devices.
关键词： direct laser writing,photoluminescence,monolayer MoS2,wavelength division multiplexing,optical recording
更新于2025-09-23 15:21:01
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Overall Assay of Neuronal Signal Propagation Pattern With Long-Term Potentiation (LTP) in Hippocampal Slices From the CA1 Area With Fast Voltage-Sensitive Dye Imaging
摘要： Activity-dependent changes in the input-output (I-O) relationship of a neural circuit are in the learning and memory function of the brain. To understand circuit-wide central imaging techniques to probe the membrane potential at every adjustments, optical component of neurons, such as dendrites, axons and somas, in the circuit are essential. We have been developing fast voltage-sensitive dye (VSD) imaging methods for quantitative measurements, especially for single-photon wide-field optical imaging. The long-term continuous measurements needed to evaluate circuit-wide modifications require stable and quantitative long-term recordings. Here, we show that VSD imaging (VSDI) can be used to record changes in circuit activity in association with theta-burst stimulation (TBS)-induced long-term potentiation (LTP) of synaptic strength in the CA1 area. Our optics, together with the fast imaging system, enabled us to measure neuronal signals from the entire CA1 area at a maximum frame speed of 0.1 ms/frame every 60 s for over 12 h. We also introduced a method to evaluate circuit activity changes by mapping the variation in recordings from the CA1 area to coordinates defined by the morphology of CA1 pyramidal cells. The results clearly showed two types of spatial heterogeneity in LTP induction. The first heterogeneity is that LTP increased with distance from the stimulation site. The second heterogeneity is that LTP is higher in the stratum pyramidale (SP)-oriens region than in the stratum radiatum (SR). We also showed that the pattern of the heterogeneity changed according to the induction protocol, such as induction by TBS or high-frequency stimulation (HFS). We further demonstrated that part of the heterogeneity depends on the I-O response of the circuit elements. The results show the usefulness of VSDI in probing the function of hippocampal circuits.
关键词： LTP,optical recording,L-LTP,TBS,hippocampus,voltage-sensitive dye,HFS
更新于2025-09-19 17:15:36
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Eu2+/Eu3+-based Smart Duplicato-responsive of Stimuli and Time-gates Nanohybrid for Optical Recording and Encryption
摘要： With the rapid development of information science, it is urgent that memory devices possessing high security, density, and desirable storage ability should be developed. In this work, a smart duplicato-responsive of stimuli and time-gates nanohybrid based on variable valence Eu2+/Eu3+ co-encapsulated has been fabricated and act as active material in the multi-level and multi-dimensional memory devices. The luminescence lifetime of Eu3+ in this nanohybrid performed a stimuli-response due to the energy level of the coordinated ligand could be modulated. Furthermore, by simply sintered procedure, Eu3+ was partially in situ reduced to Eu2+ with short lifetime in the system. And the in situ reduction ensured both of Eu3+ and Eu2+ ions uniform distribution in the nanohybrid and simultaneous response upon light excitation of variable valence Eu ions. Interestingly, Eu3+ revealed the prolonged lifetime because of the presence of energy transfer effect of Eu2+→Eu3+. Such a nanohybrid had the abundant luminescent properties including the short lifetime of Eu2+, the energy transferring from the Eu2+ to Eu3+ ions, and the stimuli-response of the Eu3+ lifetimes when exposed to acidic or basic vapor, thus giving birth to interesting recording and encryption performance in spatial-temporal dimensions. We believe that this research will point out a new direction for the future development of multi-level and multi-dimensional optical recording and encryption materials.
关键词： variable valence europium,optical recording and encryption,nanohybrid,duplicato-responsive,in situ coordination
更新于2025-09-09 09:28:46
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Bi L<sub>III</sub>-Edge XAFS Study of GeBiTe Phase-Change Recording Material Using Actual Media
摘要： The crystallization of GeBiTe (GBT) is faster than that of the well-known phase-change recording material GeSbTe (GST). Therefore, the investigation of GBT structure as well as its crystallization process is attractive. Accordingly, the high-speed crystallization of GBT is due to Bi. Thus, it was necessary to know the local structure around Bi within the amorphous GBT. Note that an interface layer, which is a very thin dielectric film adjacent to recording film, assists the crystallization of phase-change material in the optical recording media. The local structure around Bi in GBT within an actual media was analyzed using XAFS. Bi LIII-edge XAFS spectra of crystalline and amorphous GBT respectively, both with and without interface layer in the media, were obtained. As result of this analysis on GBT, nearest neighbor atom of Bi was found to be Ge. Moreover, within the amorphous GBT, the interatomic distance around Bi is larger than that around Ge. These are the differences between GST and GBT. We speculate that these factors contribute to the improvement of the GBT crystallization speed. On the other hand, the interface layer doesn’t influence the local structure of GBT; however, it does have an electric effect on the recording layer.
关键词： interatomic distance,higher crystallization speed,rewritable optical recording media,Bi LIII-edge,GeSbTe(GST),phase-change material,actual media,EXAFS,interface layer,GeBiTe(GBT)
更新于2025-09-04 15:30:14