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Synthesis of Al-doped CdS/Si nanoheterojunction arrays and their electrical and electroluminescence properties
摘要： The Al-doped CdS/Si nanoheterostructures were prepared by growing Al-doped CdS films on silicon nanoporous pillar array (Si-NPA) through chemical bath deposition (CBD). Their structure, electrical, and electroluminescence properties were investigated as a function of [Al]/[Cd]. At low [Al]/[Cd], Al ions tend to enter the lattice substitutionally, decreasing the lattice constants, micro-strain along (0 0 2) plane, and resistivity, and enhancing average crystallite size and carrier mobility. However, this behavior is reversed at high [Al]/[Cd], because Al ions tend to enter the lattice interstitially. The electroluminescence (EL) properties were most affected by Al doping. As Al concentration increases, the EL intensity initially increased rapidly to a maximum with [Al]/[Cd] and then decreased with further increased [Al]/[Cd]. The maximum of EL intensity was observed in sample S-0.07. Its EL intensity is 320 times that of S-0 and its applied voltages are very low. It could be observed by the naked eyes even at 3 V. These results indicated that Al-doped CdS/Si-NPA might be a great potential in constructing optoelectronic nanodevices. The measured results show the incorporation of suitable amount of Al would improve significantly the performances of CdS/Si-NPA heterojunctions, increasing the uniformity of CdS thin film, decreasing the resistivity, enhancing carrier mobility, improving obviously the rectification behavior, and increasing greatly the EL emission intensity. These results indicated that Al-doped CdS/Si-NPA might be a great potential in constructing optoelectronic nanodevices.
关键词： optoelectronic nanodevices,electrical properties,chemical bath deposition,electroluminescence properties,Al-doped CdS/Si nanoheterostructures
更新于2025-09-09 09:28:46
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Piezo-phototronic effect on optoelectronic nanodevices
摘要： Optoelectronic nanoscale devices have wide applications in chemical, biological, and medical technologies. Improving the performance efficiency of these devices remains a challenge. Performance is mainly dictated by the structure and characteristics of the semiconductor materials. Once a nanodevice is fabricated, its efficiency is determined. The key to improving efficiency is to control the interfaces in the device. In this article, we describe how the piezo-phototronic effect can be effectively utilized to modulate the band at the interface of a metal/semiconductor contact or a p–n junction to enhance the external efficiency of many optoelectronic nanoscale devices such as photodetectors, solar cells, and light-emitting diodes (LEDs). The piezo-phototronic effect can be highly effective at enhancing the efficiency of energy conversion in today’s green and renewable energy technology without using the sophisticated nanofabrication procedures that have high cost and complexity.
关键词： photodetectors,light-emitting diodes,optoelectronic nanodevices,solar cells,piezo-phototronic effect
更新于2025-09-04 15:30:14