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oe1(光电查) - 科学论文

2 条数据
?? 中文(中国)
  • Facile Coengineering of Oxygen Defects and Highly Active {110} Facets in TiO <sub/>2</sub> Nanorods for Efficient Water Splitting

    摘要: Optimizing the photocatalytic activity of TiO2 for hydrogen evolution from water splitting remains a challenging task. Herein, we report the synthesis of a slightly oxygen-deficient TiO2 film consisting of anatase nanorods with mainly {110} lateral surfaces by a facile one-step technology of magnetron sputtering. The 1D nanostructure and Ti3+/oxygen vacancies in the as-prepared TiO2 film are advantageous for the inhibition of recombination of electron-hole pairs, while the exposed {110} lateral surfaces provide abundant surface active sites; as a result, this TiO2 exhibited an ultra-high photocatalytic activity for water splitting. Remarkably, photocatalytic overall water splitting into H2 and O2 simultaneously with a ratio close to 2:1 has been realized for the first time over pristine anatase TiO2 without the assistance of sacrificial electron donor and cocatalyst. Additionally, in the presence of methanol as a sacrificial agent, the pristine TiO2 displayed a high apparent quantum efficiency of ~21.4% at 365 nm and the hydrogen generation rate under the full-arc light irradiation could be as high as 14.35 mmol m-2 h-1, which is about three orders of magnitude higher than that of P25 film (~0.014 mmol m-2 h-1). This result provides a facile pathway to synthesizing defect-based metal oxide with optimal facets and morphology for high-efficiency energy conversion.

    关键词: TiO2 nanorods,active facets,photocatalysis,oxygen defect,water splitting

    更新于2025-09-19 17:15:36

  • Direct Examination of the Deactivation of the Boron–Oxygen Center in Cz-Si Solar Cells Under Regeneration Conditions via Electroluminescence

    摘要: We examine the regeneration kinetics of the boron–oxygen defect in boron-doped p-type Czochralski-grown silicon (Cz-Si) solar cells as a function of the excess carrier concentration Δn at the regeneration conditions, i.e., at elevated temperature (140 °C). To perform the regeneration, we apply different forward-bias voltages (Vappl) to solar cells in darkness and measure directly the emitted electroluminescence (EL) signal at different time steps during the regeneration of the cell. Measuring the EL signal emitted by the solar cell during regeneration, we are able to directly determine Δn during regeneration for each applied voltage. In addition to the EL signal, we measure the electric current flowing through the solar cell during the regeneration process. This current is proportional to the overall recombination rate in the cell and, hence, reflects the changing bulk recombination during the regeneration process. From the measured time-dependent cell current, we determine the deactivation rate constant Rde of the boron–oxygen defect. Our experimental results unambiguously show that Rde increases proportionally with Δn during the regeneration process.

    关键词: Boron–oxygen defect,injection,regeneration,electroluminescence (EL),carrier,passivated emitter and rear cells (PERCs),Czochralski-grown silicon,light-induced degradation (LID)

    更新于2025-09-12 10:27:22