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oe1(光电查) - 科学论文

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  • Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells

    摘要： Fully ion-implanted n-type PERT solar cells with boron-implanted emitter and phosphorus-implanted back surface field were fabricated on the n-type silicon wafers obtained from the top part of the magnetic field-applied Czochralski ingot. It was observed that the electrical parameters are widely dispersed; among 11 solar cells, the best performing achieved 20.4% front side conversion efficiency, whereas the worst achieved 19.0%. Although the silicon wafers had low oxygen concentrations of 3–4 × 1017 atoms/cm3, the density of oxygen precipitates in the silicon wafers was on the order of 109 /cm3 as a consequence of the fully ion-implanted n-type PERT silicon solar cell processes. In addition, it was observed that the front side conversion efficiencies of the solar cells depended on the density of oxygen precipitates. Furthermore, the behavior of the oxygen precipitation during the fabrication processes of the solar cell is discussed.

    关键词： oxygen precipitation,conversion efficiency,ion implantation,n-type PERT solar cells,silicon wafers

    更新于2025-09-12 10:27:22

  • VO <i> <sub/>n</sub></i> Complexes in RTA Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy

    摘要： Oxygen-vacancy complexes formed after rapid thermal annealing in silicon wafers were investigated by FTIR spectroscopy at 6 K. It was found that VO4 is the only detectable complex. The concentration of VO4 complexes increases with increasing temperature of RTA treatment in the temperature range between 1250?C and 1400?C. The concentration at maximal temperature is equal to 4.5 × 1013 cm?3. The experimental results were compared with concentrations of VOn complexes in silicon wafers obtained using ab-initio calculations combined with rate equation modelling. The simulated concentration of VO4 corresponds well to the measured concentration. The bulk microdefect density increases with increasing VO4 concentration. The vacancies stored in VOn complexes after RTA are slowly released during further annealing and enhance oxide precipitation.

    关键词： VO4 complexes,silicon wafers,Rapid thermal annealing,FTIR spectroscopy,oxygen precipitation

    更新于2025-09-09 09:28:46