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Triple-Junction Optoelectronic Sensor with Nanophotonic Layer Integration for Single Molecule Level Decoding
摘要： Interest in developing a rapid and robust DNA sequencing platform has surged over the past decade. Various next-/third-generation sequencing mechanisms have been employed to replace the traditional Sanger sequencing method. In sequencing by synthesis (SBS), a signal is monitored by a scanning charge-coupled device (CCD) to identify thousands to millions of incorporated dNTPs with distinctive fluorophores on a chip. Because one reaction site usually occupies dozens of pixels on a CCD detector, a bottleneck related to the bandwidth of CCD imaging limits the throughputs of the sequencing performance and causes tradeoffs among speed, accuracy, read length, and the numbers of reaction sites in parallel. Thus, current research aims to align one reaction site to a few pixels by directly stacking nanophotonic layers (NPLs) onto a CMOS detector to minimize the size of the sequencing platforms and accelerate the processing procedures. This article reports a custom integrated optoelectronic device based on a triple-junction photodiode (TPD) CMOS sensor in conjunction with NPL integration for real-time illumination and detection of fluorescent molecules.
关键词： planar waveguide,nanophotonic layer,CMOS,triple-junction photodiode (TPD),filter,grating
更新于2025-11-25 10:30:42
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Design of an intermediate Bragg reflector within triple-junction solar cells for spectrum splitting applications
摘要： We investigate the use of distributed Bragg reflectors (DBRs) within triple-junction solar cells (TJSC) for spectrum splitting photovoltaics. An optical model of a lattice-matched (LM) GaInP/GaInAs/Ge TJSC with intermediate DBR is developed, in good agreement with measured reflectance. By modifying the DBR layer number, composition and thickness to broaden the reflectance band, we show that a DBR can provide suitable 900–1050 nm reflectance for spectrum splitting from the LM TJSC to a Si cell, resulting in a more efficient 4-junction receiver. For better practicality and cost effectiveness, we propose that the buffer layers in metamorphic (MM) TJSCs could additionally function as a DBR for spectrum splitting applications. We propose several DBR designs to achieve a suitable spectrum-splitting reflectance band from MM TJSCs to a Si cell, again resulting in a more efficient 4-junction receiver. Finally, we show that our intermediate DBR approach to spectrum splitting has the advantage of a greatly reduced angle-of-incidence dependence compared to a discrete dielectric filter.
关键词： Triple-junction solar cell,Spectrum splitting,Buffer layers,Distributed Bragg reflector
更新于2025-10-22 19:40:53
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[IEEE 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Waikoloa Village, HI (2018.6.10-2018.6.15)] 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Design of Bragg Reflector in GaInP/GaInAs/Ge Triple-junction Solar Cells for Spectrum Splitting Applications
摘要： The use of intermediate distributed Bragg reflectors (DBRs) is investigated. Optical models for both commercial lattice-matched (LM) and metamorphic (MM) GaInP/GaInAs/Ge triple-junction solar cells (TJSCs) are developed, in good agreement with measured reflectance. Integrating a suitable DBR structure into a TJSC has the potential to provide the required IR reflectance for spectrum splitting from the LM and MM TJSC to a Si cell. We show that the intermediate DBR approach to spectrum splitting has the advantage of a greatly reduced angle-of-incidence dependence compared to a discrete dielectric filter.
关键词： Spectrum splitting,Buffer layers,Distributed Bragg reflector,Triple junction solar cell
更新于2025-10-22 19:40:53
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Effect of front TCO on the performance of rear-junction silicon heterojunction solar cells: Insights from simulations and experiments
摘要： In this study we make a detailed comparison between indium tin oxide (ITO), aluminum-doped zinc oxide (ZnO:Al) and hydrogenated indium oxide (IO:H) when applied on the illuminated side of rear-junction silicon heterojunction (SHJ) solar cells. ITO being the state of the art material for this application, ZnO:Al being an attractive substitute due to its cost effectiveness and IO:H being a transparent conductive oxide (TCO) with high-mobility and excellent optical properties. Through numerical simulations, the optically optimal thicknesses for a double layer anti-reflective coating system, consisting of the respective TCO and amorphous silicon oxide (a-SiO2) capping layers are defined. Through two-dimensional electrical simulations, we present a comparison between front-junction and rear-junction devices to show the behavior of series resistance (Rs) in dependence of the TCO sheet resistance (Rsh) and the device effective lifetime (τeff). The study indicates that there is a τeff dependent critical TCO Rsh value, above which, the rear-junction device will become advantageous over the front-junction design in terms of Rs. Solar cells with the respective layers are analyzed. We show that a thinner TCO optimized layer will result in a benefit in cell performance when implementing a double layer anti-reflective coating. We conclude that for a highest efficiency solar cell performance, a high mobility TCO, like IO:H, is required as the device simulations show. However, the rear-junction solar cell design permits the implementation of a lower conductive TCO in the example of the cost-effective ZnO:Al with comparable performance to the ITO, opening the possibility for substitution in mass production.
关键词： Transparent conductive oxide,Sheet resistance,Series resistance,Rear-junction,Silicon heterojunction,Anti-reflective coating
更新于2025-10-22 19:40:53
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2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
摘要： The heterojunction bipolar transistor (HBT) differs from the classical homojunction bipolar junction transistor in that each emitter-base-collector layer is composed of a different semiconductor material. 2D material (2DM)-based heterojunctions have attracted attention because of their wide range of fundamental physical and electrical properties. Moreover, strain-free heterostructures formed by van der Waals interaction allows true bandgap engineering regardless of the lattice constant mismatch. These characteristics make it possible to fabricate high-performance heterojunction devices such as HBTs, which have been difficult to implement in conventional epitaxy. Herein, NPN double HBTs (DHBTs) are constructed from vertically stacked 2DMs (n-MoS2/p-WSe2/n-MoS2) using dry transfer technique. The formation of the two P–N junctions, base-emitter, and base-collector junctions, in DHBTs, was experimentally observed. These NPN DHBTs composed of 2DMs showed excellent electrical characteristics with highly amplified current modulation. These results are expected to extend the application field of heterojunction electronic devices based on various 2DMs.
关键词： 2D materials,tungsten diselenide,P–N junction,heterojunction bipolar transistor,molybdenum disulfide
更新于2025-09-23 15:23:52
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Light enhanced room temperature resistive NO2 sensor based on a gold-loaded organic–inorganic hybrid perovskite incorporating tin dioxide
摘要： A material is described for sensing NO2 in the gas phase. It has an architecture of type Au/MASnI3/SnO2 (where MA stands for methylammonium cation) and was fabricated by first synthesizing Au/MASnI3 and then crystallizing SnO2 on the surface by calcination. The physical and NO2 sensing properties of the composite were examined at room temperature without and with UV (365 nm) illumination, and the NO2-sensing mechanism was studied. The characterization demonstrated the formation of a p-n heterojunction structure between p-MASnI3 and n-SnO2. The sensor, best operated at a voltage of 1.1 V at room temperature, displays superior NO2 sensing performance. Figures of merit include (a) high response (Rg/Ra = 240 for 5 ppm NO2; where Rg stands for the resistance of a sensor in test gas, and Ra stands for the resistance of a sensor in air), (b) fast recovery (about 12 s), (c) excellent selectivity compared to sensors based on the use of SnO2 or Au/SnO2 only, both at room temperature under UV illumination; (d) a low detection limit (55 ppb), and (e) a linear response between 0.5 and 10 ppm of NO2. The enhanced sensing performance is mainly attributed to the high light absorption capacity of MASnI3, the easy generation and transfer of photo-induced electrons from MASnI3 to the conduction band of SnO2, and the catalytic effect of gold nanoparticles.
关键词： Light absorbing material,SPR effect,Photo generated electrons,Gas sensing,P-n junction,Catalytic effect,Heterojunction,SnO2,UV light,MASnI3
更新于2025-09-23 15:23:52
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Metal–organic framework coated titanium dioxide nanorod array p–n heterojunction photoanode for solar water-splitting
摘要： This paper presents a p–n heterojunction photoanode based on a p-type porphyrin metal–organic framework (MOF) thin film and an n-type rutile titanium dioxide nanorod array for photoelectrochemical water splitting. The TiO2@MOF core–shell nanorod array is formed by coating an 8 nm thick MOF layer on a vertically aligned TiO2 nanorod array scaffold via a layer-by-layer self-assembly method. This vertically aligned core–shell nanorod array enables a long optical path length but a short path length for extraction of photogenerated minority charge carriers (holes) from TiO2 to the electrolyte. A p–n junction is formed between TiO2 and MOF, which improves the extraction of photogenerated electrons and holes out of the TiO2 nanorods. In addition, the MOF coating significantly improves the efficiency of charge injection at the photoanode/electrolyte interface. Introduction of Co(III) into the MOF layer further enhances the charge extraction in the photoanode and improves the charge injection efficiency. As a result, the photoelectrochemical cell with the TiO2@Co-MOF nanorod array photoanode exhibits a photocurrent density of 2.93 mA/cm2 at 1.23 V (vs. RHE), which is ~ 2.7 times the photocurrent achieved with bare TiO2 nanorod array under irradiation of an unfiltered 300 W Xe lamp with an output power density of 100 mW/cm2.
关键词： p–n junction,photoanode,titanium dioxide,metal-organic framework,water-splitting
更新于2025-09-23 15:23:52
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2D Schottky Junction between Graphene Oxide and Transition-Metal Dichalcogenides: Photoresponsive Properties and Electrocatalytic Performance
摘要： 2D graphene is conductor and not a semiconductor. 2D transition—metal dichalcogenides (TMD) is a semiconductor and not a conductor. Preparing 2D composite material that simultaneously possesses both advantages of graphene and TMD has proven to be challenging. In this work, both 2D-WS2/2D-GO and 2D-MoS2/2D-GO composites with few layer thickness are synthesized. The electronic structure indicates a high content of Mo4+ 3d5/2 and W4+4f7/2 with lower binding energy in the 2D composite, which is ascribed to partial loss of surface sulfur atoms in 2D composites and the newly formed heteroatomic bond of CWS and CMoS. The Schottky junction between 2D-GO and 2D-TMD (2D G-T junction) is established and exhibits obvious photoelectric responses. Superior electrocatalytic properties of the two 2D-composites are attributable to the 2D Schottky Junction between 2D-TMDs and 2D-GO. Interlayer electronic coupling in 2D Schottky Junction (2D G-T junction) activates inert sites on the 2D surface of 2D-TMDs or GO. The power conversion efficiency of dye-sensitized solar cells (DSCs) based on 2D-WS2/2D-GO is 9.54% under standard solar illumination intensity (AM1.5, 100 mW cm?2). The value is one of the highest reported efficiencies for DSCs based on Pt-free counter electrodes. Finally, 2D-WS2/2D-GO composites exhibit excellent stability as counter electrode of DSCs.
关键词： photoresponse,interlayer electronic coupling,2D,electrocatalyst,graphene,transition-metal dichalcogenides,Schottky junction
更新于2025-09-23 15:23:52
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Contactless parametric characterization of bandgap engineering in p-type FinFETs using spectral photon emission
摘要： In the last decade it has become increasingly popular to use germanium enriched silicon in modern field effect transistors (FET) due to the higher intrinsic mobility of both holes and electrons in SiGe as compared to Si. Whether used in the source/drain region (S/D) as compressive stressor, which is an efficient mobility booster on Si channel devices, or as channel material, the SiGe increases channel carrier mobility and thus enhancing device performance. Because the germanium content modifies the effective bandgap energy EG, this material characteristic is an important technology performance parameter. The bandgap energy can be determined in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is used here as a non-destructive method to characterize engineered bandgaps in operative transistor devices, while the device remains fully functional. Before applying the presented technique to a p-type FinFET device, it is put to the proof by verifying the nominal silicon bandgap on an (unstrained) 120 nm technology FET. Subsequently the characterization capability for bandgap engineering is then successfully demonstrated on a SiGe:C heterojunction bipolar transistor (HBT). In a final step, the bandgap energy EG of a 14/16 nm p-type FinFET was determined to be 0.84 eV, which corresponds to a Si0.7Ge0.3 mixture. The presented characterization technique is a contactless fault isolation method that allows for quantitative local investigation of engineered bandgaps in p-type FinFETs.
关键词： p-n junction,Heterojunction bipolar transistor,Bandgap characterization,p-channel FinFET,SiGe, strained Si,Body diode, parasitic operation,Bandgap engineering,Body bias voltage,HBT,Contactless fault isolation,Spectral photon emission,MOSFET
更新于2025-09-23 15:23:52
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High-<formula><tex>$T_\rm{c}$</tex></formula> Superconducting Fourth-Harmonic Mixer using a Dual-Band Terahertz On-Chip Antenna of High Coupling Efficiency
摘要： This paper presents a dual-band on-chip antenna coupled high-Tc superconducting (HTS) Josephson-junction sub-terahertz (THz) fourth-harmonic mixer. The antenna utilizes a couple of different structured twin-slots to enable the resonant radiations at two frequencies, and integrates a well-designed coplanar waveguide (CPW) network for achieving good radiation coupling and signal isolation characteristics. The electromagnetic (EM) simulations show that coupling efficiencies as high as -4 dB and -3.5 dB are achieved for the 160-GHz and 640-GHz operating frequency bands, respectively. Based on this dual-band antenna, a 640-GHz HTS fourth-harmonic mixer is developed and characterized in a range of operating temperatures. The mixer exhibits a measured conversion gain of around -18 dB at 20 K and -22 dB at 40 K respectively. The achieved intermediate-frequency (IF) bandwidth is larger than 23 GHz. These are the best results reported for HTS harmonic mixers at comparable sub-THz frequency bands to date.
关键词： high-temperature superconductor Josephson junction,dual-band on-chip antenna,terahertz wireless applications,fourth-harmonic mixing,Terahertz mixer
更新于2025-09-23 15:23:52