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Tuning in BiVO4/Bi4V2O10 porous heterophase nanospheres for synergistic photocatalytic degradation of organic pollutants
摘要： Heterophase junction construction is a powerful means of inhibiting recombination of photoinduced charge carriers. Herein, we prepared BiVO4/Bi4V2O10 porous heterophase nanospheres assembled by nanoflakes through a facile solvothermal process. The crystal structure of the porous nanospheres can be easily regulated from mixed phase of BiVO4 and Bi4V2O10 to pure BiVO4 by changing the solvothermal reaction time. The formation of heterophase junction BiVO4/Bi4V2O10 can greatly enhance the transfer and separation rate of photogenerated charge carriers. Meanwhile, the porous nanoflake-based nanosphere structure can enhance visible light utilization and organic pollutants adsorption. Benefiting from the synergy effects of these positive factors, the optimal BiVO4/Bi4V2O10 exhibits excellent visible light photocatalytic performance and cycling capability for the degradation of organic pollutants.
关键词： porous nanospheres,heterophase junction,pollutants degradation,BiVO4/Bi4V2O10,visible light photocatalysis
更新于2025-09-10 09:29:36
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Spectral measurements of THz radiation emitted from intrinsic Josephson junction stacks
摘要： A superconducting integrated receiver (SIR) comprises all of the elements needed for heterodyne detection on a single chip. Recently, the SIR was successfully implemented for the first spectral measurements of terahertz (THz) radiation emitted from intrinsic Josephson junction stacks (BSCCO mesa) at frequencies up to 750 GHz; a linewidth below 10 MHz has been recorded in the high bias regime. In this report the results of the spectral measurements of THz radiation emitted from intrinsic Josephson junction stacks are summarized; recent results of spectrometric gas detection using THz radiation from a BSCCO mesa are presented.
关键词： BSCCO mesa,spectral measurements,heterodyne detection,intrinsic Josephson junction stacks,THz radiation
更新于2025-09-10 09:29:36
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Orbital Control of Long Range Transport in Conjugated and Metal-Centered Molecular Electronic Junctions
摘要： Large area molecular junctions consisting of covalently bonded molecular layers between conducting carbon electrodes were compared for Co and Ru complexes as well as nitroazobenzene and anthraquinone, in order to investigate the effect of molecular structure and orbital energies on electronic behavior. A wide range of molecular layer thickness (d) from 1.5-28 nm was examined, and revealed three distinct transport regimes in attenuation plots of current density (J) vs thickness. For d < 5 nm, the four molecular structures had comparable current densities and thickness dependence despite significant differences in orbital energies, consistent with coherent tunneling and strong electronic coupling between the molecules and contacts. For d > 12 nm, transport depends on electric field rather than bias, with the slope of ln J vs d near zero when plotted at constant electric field. At low temperature (T < 150 K), transport is nearly activationless and likely occurs by sequential tunneling and/or field induced ionization. For d =5-10 nm, transport correlates with the energy gap between the highest occupied and lowest unoccupied molecular orbitals, and ln J is linear with the square root of the bias or electric field. Such linearity occurs for all three transport regimes, and is consistent with energy barrier lowering by the applied electric field. The results clearly indicate a strong dependence of charge transport on molecular orbital energies provided d> 5 nm, with a variation of seven orders of magnitude of J for different molecules and d=10 nm. The results provide insights into charge transport mechanisms as well as a basis for rational design of molecular electronic devices.
关键词： molecular electronics,molecular junction,charge transport,multistep tunneling
更新于2025-09-10 09:29:36
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All solution-based heterogeneous material formation for p-n junction diodes
摘要： All solution-based devices have potential as the next class of macroscale and multifunctional electronics on versatile amorphous substrates. Different methods and materials have been studied to control the formation of p-type and n-type semiconducting materials because forming active materials for transistors and sensors remains challenge. This study proposes an approach for solution-based devices in which a p-n junction diode is fabricated using a solution-based InZnO (IZO) thin film for the n-type semiconductor and a carbon nanotube (CNT) network film for the p-type semiconductor. Additionally, the barrier height (~160 meV) is extracted and a p-n junction diode on a plastic film is demonstrated. Although the performance requires further improvements by modifying the interfaces, this printing method may be an interesting approach for all-printed electronics, which can replace conventional Si electronics.
关键词： flexible device,hetero-junction,diode,InZnO,carbon nanotube
更新于2025-09-10 09:29:36
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First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge
摘要： This letter represents the ?rst direct experimental demonstrations and mechanism proposal regarding abnormal palladium diffusion into germanium (Ge). Our experiments indicated that excess Ge atoms among palladium germanide alloy formation indirectly induce the abnormal out-diffusion of mass palladium atoms into Ge. Consequently, palladium germanide alloy on both n-type and p-type Ge form ohmic-like Schottky junctions. To identify this phenomenon, ?rst-principle calculations and technology computer-aided design simulation were used to evaluate the electrical in?uence of palladium atoms in Ge. We discovered that the activated palladium atoms in Ge induce large midgap bulk-trap states, which contribute to a severe increment of trap-assisted tunneling current at the palladium germanide/Ge junction.
关键词： Schottky junction,First-principles calculations,palladium germanide,technology computer-aided design,germanium,trap-assisted tunneling,fermi-level pinning effect
更新于2025-09-10 09:29:36
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Scanning probe microscopy and potentiometry using a junction field effect transistor based sensor
摘要： Scanning tunneling microscopy in its conventional form relies on a steady state tunneling current of 10?12–10?6 A. However, for various applications, it is desirable to reduce the current load to a minimum. Here, we present first experiments using a cooled junction field effect transistor in open gate operation, thereby reducing the DC-current to less than 10?19 A. This enables almost ideal measurements of the local electrochemical potential on a surface. Various methods applying dynamic modes can be used to maintain a constant distance between the scanning probe and the sample surface. Here, we use an AC-bias applied to the sample and a lock-in amplifier connected to the preamplifier to evaluate the conductance of the tunneling gap.
关键词： potentiometry,scanning probe microscopy,junction field effect transistor,sensor
更新于2025-09-09 09:28:46
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Total-ionizing-dose effects and proton-induced displacement damage on MoS2-interlayer-MoS2 tunneling junctions
摘要： Tunneling-dominated charge transport is demonstrated in vertically stacked MoS2/interlayer/MoS2 heterostructures with Al2O3, h-BN and HfO2 dielectrics. All devices are highly resistant to 10-keV X-ray irradiation. Only small transient changes in X-ray-induced photocurrent are observed as a result of trap creation in the thin interlayer dielectric, with rapid passivation. Samples with Al2O3 and h-BN interlayer dielectrics show significant increases in conduction current during proton irradiation, due to displacement-damage-induced defects that lower the effective tunnel-barrier height. Density-functional-theory calculations provide insights into the pertinent defects. Devices with HfO2 interlayer dielectrics show great promise for use in radiation-tolerant, ultimately-scaled tunnel FETs.
关键词： 2 dimension,HfO2,proton irradiation,X-ray,DFT,h-BN,MoS2 tunnel junction
更新于2025-09-09 09:28:46
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Three-mode multiplexer and demultiplexer utilizing trident and multimode couplers
摘要： In this paper, a simultaneous three-mode silicon (de)multiplexer using a trident coupler and a 3×3 multimode interference (MMI) is presented. The fundamental (TE0), first-order (TE1), and second-order (TE2) modes at the input are successfully demultiplexed and converted to three uniform fundamental modes (TE0) at the output ports. The device is designed and optimized by numerical simulation using three-dimensional beam propagation method together with effective index method. The three-mode (de)multiplexing is achieved over the whole C-band with small insertion loss (<0.9 dB) and crosstalk (<?17 dB). The proposed device also features with a small footprint (5 μm×400 μm) and a large fabrication tolerance against chip-size variations while maintaining the desired optical performance.
关键词： silicon photonics,Mode-division multiplexing,Y-junction coupler,planar lightwave circuits,mode conversion,multimode interference coupler
更新于2025-09-09 09:28:46
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Semiconducting Cu-doped AlO<sub>x</sub> films fabricated by drop-photochemical deposition
摘要： Cu-doped aluminum oxides (AlOx) thin films were deposited by the drop photochemical deposition method using an aqueous solution containing Al(NO3)3, Cu(NO3)2 and Na2S2O3. After deposition, the films were annealed at 400oC for 60 min. The Cu-doped AlOx films showed p-type photoresponse in a photoelectrochemical measurement. Moreover, while negligible electrical conductivity was detected for non-doped AlOx on an insulating substrate, electrical conduction was clearly observed for the Cu-doped films with resistivity of the order of 108 Ωcm. The junction between non-doped AlOx and Cu-doped AlOx showed rectification and thus was considered to be a p-n junction. Thus, the conductivity and conduction type of aluminum oxide was controlled by Cu doping.
关键词： p-n junction,photochemical deposition,semiconductor,Cu doping,Aluminum oxide
更新于2025-09-09 09:28:46
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4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness
摘要： A state-of-the art family of 1200 V junction barrier Schottky (JBS) diodes was developed. These devices are highly competitive in switching applications thanks to low specific series resistance (1.8 mΩ.cm2 at current rating) and low capacitive charge (1420 nC.cm-2 at 800 V). A uniform avalanche distribution over the active area combined with an optimized high-voltage termination provides industry-leading UIS capabilities. Stringent reliability tests were performed to meet the qualification requirements for the industrial market.
关键词： junction barrier Schottky diode,4H-SiC,emission microscopy,TCAD,unclamped inductive switching
更新于2025-09-09 09:28:46