- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Creation of Photoactive Inorganic/Organic Interfaces Using Occlusion Electrodeposition Process of Inorganic Nanoparticles During Electropolymerization of 2,2′:5′,2′′-Terthiophene
摘要： Photoactive (IOI) inorganic/organic interface assemblies were prepared using an occlusion electrodeposition method. Poly-2,2′:5′,2′′-Terthiophene (PTTh) were the organic thin films that occluded each of CdS, TiO2, and Zn-doped WO3 nanoparticles. The energy band gap structures were investigated using spectroscopic and electrochemical techniques. The obtained assemblies were investigated in aqueous solutions under both dark and illuminated conditions. The results were compared with the behavior of PTTh thin film. Oxygen played an important role in minimizing electron/hole recombination as was evident by observed very low photocurrent when oxygen was removed by nitrogen purge. Results show that PTTh/CdS gave the greatest photocurrent, followed by PTTh/Zn-WO3 and PTTh/TiO2.
关键词： Occlusion,Interface,Organic semiconductors,Photoelectrochemistry,Inorganic
更新于2025-09-04 15:30:14
-
WO3/BiVO4 Type-II Heterojunction Arrays Decorated with Oxygen-deficient ZnO Passivation Layer: a Highly Efficient and Stable Photoanode
摘要： In present work, we report a ternary WO3/BiVO4/ZnO photoanode with boosted PEC efficiency and stability towards highly efficient water splitting. The type-II WO3/BiVO4 heterojunction arrays are firstly prepared by hydrothermal growth of WO3 nanoplate arrays onto the substrates of ?uorine-doped tin oxide (FTO) coated glasses, followed by spin-coating of BiVO4 layers onto the WO3 nanoplate surfaces. After that, thin ZnO layers are further introduced onto the WO3/BiVO4 heterojunction arrays via atomic layer deposition (ALD), leading to the construction of ternary WO3/BiVO4/ZnO photoanodes. It is verified that the ZnO thin layer in WO3/BiVO4/ZnO photoanode contains abundant oxygen vacancies, which could be acted as an effective passivation layer to enhance the charge separation and surface water oxidation kinetics of photogenerated carriers. The as-prepared WO3/BiVO4/ZnO photoanode produces a photocurrent of 2.96 mA cm-2 under simulated sunlight with an incident photon-to-current conversion e?ciency (IPCE) of ～72.8 % at 380 nm at a potential of 1.23 V vs. RHE without cocatalysts, both of which are comparable to the state-of-art WO3/BiVO4 counterparts. Moreover, the photocurrent of WO3/BiVO4/ZnO photoanode shows only 9 % decay after 6 h, suggesting its high photoelectrochemical (PEC) stability.
关键词： type-II heterojunction,WO3/BiVO4,nanoplate arrays,photoelectrochemistry,passivation layer
更新于2025-09-04 15:30:14