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[Lecture Notes in Electrical Engineering] Sensors Volume 539 (Proceedings of the Fourth National Conference on Sensors, February 21-23, 2018, Catania, Italy) || Portable Optoelectronic System for Monitoring Enzymatic Chemiluminescent Reaction
摘要： This work presents a portable lab-on-chip system, based on thin film electronic devices and an all-glass microfluidic network, for the real-time monitoring of enzymatic chemiluminescent reactions. The microfluidic network is patterned, through wet etching, in a 1.1 mm-thick glass substrate that is subsequently bonded to a 0.5 mm-thick glass substrate. The electronic devices are amorphous silicon p-i-n photosensors, deposited on the outer side of the thinner glass substrate. The photosensors, the microfluidic network and the electronic boards reading out the photodiodes' current are enclosed in a small metallic box (10 × 8 × 15 cm3) in order to ensure shielding from electromagnetic interferences. Preliminary tests have been performed immobilizing horseradish peroxidase on the inner wall of the microchannel as model enzyme for detecting hydrogen peroxide. Limits of detection and quantification equal to 18 and 60 μM, respectively, have been found. These values are comparable to the best performances reported in literature for chemiluminescent-based optofluidic sensors.
关键词： Amorphous silicon,Photosensors,Enzymatic reactions,Anodic bonding,Horseradish peroxidase,Microfluidics
更新于2025-09-19 17:15:36
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Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors
摘要： In this study, indium gallium zinc oxide (InGaZnO [IGZO]) active layer capped with an ultrathin p-type stannous oxide (SnO) is demonstrated to be a thin film transistor (TFT) for color scanning and photosensing device applications. Typically, the sole IGZO-based TFT is blind to visible light and hard to be developed for visible light sensing. The combination of IGZO and SnO layers can extend the light detection spectrum into visible light wavelengths and ameliorate the photosensing characteristics. The optical responsivity and signal to noise ratio can even be enhanced from 1.05 × 10?2 to 398.02 A W?1 and from 2.1 × 101 to 6.8 × 105 with at least four orders of magnitude, respectively. With the detailed material analysis and physical model discussed, it suggests that the large amount of additional light-excited carrier generated in the capping layer is the key factor for the significant improvement. Furthermore, the phenomenon of persistent photoconductivity can be effectively suppressed by its natural recombination under the heterojunction structure without applying charge-pumping method. The electrical uniformity of the sensor device is also highly potential for the next-generation displays integrating the photosensing functions.
关键词： detection spectrum,thin film transistors,in-cell photosensors,ultrathin light-absorbing layers,photoresponsivity
更新于2025-09-19 17:15:36
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Electrostatically Doped Silicon Nanowire Arrays for Multispectral Photodetectors
摘要： Nanowires have promising applications as photodetectors with superior ability to tune absorption with morphology. Despite their high optical absorption, the quantum efficiencies of these nanowire photodetectors remain low due to difficulties in fabricating a shallow junction using traditional doping methods. As an alternative, we report non-conventional radial heterojunction photodiodes obtained by conformal coating of indium oxide layer on silicon nanowire arrays. The indium oxide layer has a high work function which induces a strong inversion in the silicon nanowire and creates a virtual p-n junction. The resulting nanowire photodetectors show efficient carrier separation and collection leading to an improvement of quantum efficiency up to 0.2. In addition, by controlling the nanowire radii, the spectral response of the In2O3/Si nanowire photodetectors are tuned over several visible light wavelengths, creating a multispectral detector. Our approach is promising for the development of highly-efficient wavelength selective photodetectors.
关键词： electrostatic doping,nanowire photodetectors,multispectral,photosensors,silicon nanowire,dopant-free,radial junction
更新于2025-09-16 10:30:52
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Analysis of dark current generated by long-wave infrared HgCdTe photodiodes with different implantation shapes
摘要： Resistance-voltage curves of B+-implanted n-on-p Hg1-xCdxTe long-wavelength infrared photodiodes with different implantation unit shapes were measured for temperatures in the 20–140 K range. The response spectrum of the device was measured, and the response cutoff wavelength was 11.45 μm. By fitting the experimental data, R0A at different temperatures and the dark current at different bias voltages of the two long-wavelength diodes were calculated theoretically. The results demonstrate that the response spectrum of the device is affected by the implantation shape. The temperature transformation point of the dominant dark current was 40 K, and correlations between some parameters were also demonstrated.
关键词： dark current,long-wave infrared,HgCdTe,photosensors
更新于2025-09-11 14:15:04
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Solution Processable P3HT/CdS Photodiodes and Their Electrical Characterization
摘要： In this work we apply simple layer solution deposition methods for the assembling of CdS/P3HT (poly(3-hexylthiophene)) p-n heterostructures and analyzed their photodetection properties in the visible optical range. The CdS-n layers were deposited on ITO-coated glass substrates by the chemical bath method employing an ammonia-free recipe. The P3HT-p layers were deposited on the CdS/ITO/glass substrates by the casting method from solution by dissolving P3HT in chloroform. As the back electrodes, to complete the p-n heterostructures, carbon (graphite) was used. The electrical properties of the assembled CdS/P3HT hybrid photodiodes in dark and under illumination at several intensities, in the 0-100 mW/cm2 interval, were analyzed from current density versus voltage (J-V) measurements, in the -5V to 5V bias voltage range. From these measurements, the photosensitivity of the photodiodes as a function of bias voltage was determined as 370 mA/W. The response of the photodiodes as a function of illumination intensity was determined from transient photocurrent measurements.
关键词： solution growth,hybrid photodiodes,chemical deposition,photosensors
更新于2025-09-04 15:30:14
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Multi-inch single-crystalline perovskite membrane for high-detectivity flexible photosensors
摘要： Single crystalline perovskites exhibit high optical absorption, long carrier lifetime, large carrier mobility, low trap-state-density and high defect tolerance. Unfortunately, all single crystalline perovskites attained so far are limited to bulk single crystals and small area wafers. As such, it is impossible to design highly demanded ?exible single-crystalline electronics and wearable devices including displays, touch sensing devices, transistors, etc. Herein we report a method of induced peripheral crystallization to prepare large area ?exible single-crystalline membrane (SCM) of phenylethylamine lead iodide (C6H5C2H4NH3)2PbI4 with area exceeding 2500 mm2 and thinness as little as 0.6 μm. The ultrathin ?exible SCM exhibits ultralow defect density, superior uniformity and long-term stability. Using the superior ultrathin membrane, a series of ?exible photosensors were designed and fabricated to exhibit very high external quantum ef?ciency of 26530%, responsivity of 98.17 A W?1 and detectivity as much as 1.62 × 1015 cm Hz1/2 W?1 (Jones).
关键词： high-detectivity,single-crystalline perovskite,flexible photosensors,induced peripheral crystallization,ultrathin membrane
更新于2025-09-04 15:30:14