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Exact Solution, Endoreversible Thermodynamics, and Kinetics of the Generalized Shockley-Queisser Model
摘要： We consider the generalized Shockley-Queisser (GSQ) model, which is based on a single assumption that photocarriers and emitted photons are in chemical equilibrium and described by the Boltzmann distribution functions with the same chemical potential. The model takes into account the frequency-dependent absorption (emission), photon trapping and recycling, photocarrier multiplication, and nonradiative recombination processes. For the noninteracting photocarriers, we obtain an exact analytical solution of the GSQ model. We present the conversion e?ciency and other photovoltaic (PV) characteristics in a convenient form via the Lambert W function. Photocarrier multiplication and recombination via three-body Auger processes are also directly included in this formalism. We derive universal formulas for useful energy, thermal losses, and emission losses per absorbed photon. We show that the relation between the maximal conversion e?ciency and the photo-induced chemical potential, obtained by Henry [J. Appl. Phys. 51, 4494 (1980)] for the ideal SQ limit, is also valid in the GSQ model. In the general case of interacting electrons, in particular for the Shockley-Read-Hall processes, the solution is presented in an iterative form. We analyze photocarrier kinetics and derive a general relation between the optimal photocarrier collection time and photocarrier lifetime with respect to all radiative and nonradiative processes. Finally, we analyze ?nite mobility limitations and show that PV devices with photon trapping and recycling provide the fast photocarrier collection required by the GSQ model.
关键词： photocarrier kinetics,photon trapping and recycling,photovoltaic conversion,Lambert W function,generalized Shockley-Queisser model
更新于2025-09-09 09:28:46
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Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion
摘要： Advanced selective doping provides effective tool for nanoscale engineering of potential barriers and photoelectron processes in quantum well (QW) and quantum dot (QD) optoelectronic nanomaterials for IR sensing and wide band photovoltaic conversion. Photoelectron kinetics and device characteristics are theoretically and experimentally investigated. Asymmetrical doping of QWs is employed in a double QW structure for tuning electron transitions in QWs by voltage bias. These QW devices demonstrate bias-tunable multi-color detection and capability of remote temperature sensing. The QD structures with bipolar doping are proposed to independently control photocarrier lifetime (photocurrent) and dark current. The bipolar doping allows us to increase the height of nanoscale potential barriers around QDs without changing the electron population in QDs, which determines dark current. The QD devices with bipolar doping demonstrate significant enhancement of photocurrent, while dark current is close to that in corresponding reference devices with unipolar doping.
关键词： quantum well,photovoltaic conversion,IR sensing,selective doping,quantum dot
更新于2025-09-04 15:30:14