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Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays
摘要： The characteristics of detectors of soft-X and γ rays based on high-purity epitaxial GaAs layers are discussed. The characteristics of detectors with different rectifying contacts are compared, that is, those with a Schottky barrier and a p–n junction. The spectral characteristics of the manufactured detectors that were obtained under the irradiation by 57Co and 241Am sources at different bias voltages and in a photovoltaic mode and the simulation results using the Geant 3.21 software package are presented.
关键词： photovoltaic mode,Geant 3.21,Schottky barrier,high-purity epitaxial GaAs layers,spectrometry,X and Gamma Rays,p–n junction
更新于2025-09-23 15:21:01
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - System-Level Integrated Active Silicon Photonic Biosensor for Detecting Small Molecule Interactions
摘要： We present a system-level integration of active silicon photonic biosensors. With on-chip photodetectors, sensors are characterized in the photovoltaic mode. A biotin-avidin affinity assay is employed to exemplify the detection of small molecule interactions, showing a detection limit in the order of 10?5 M.
关键词： photovoltaic mode,small molecule interactions,detection limit,silicon photonic biosensors,biotin-avidin affinity assay
更新于2025-09-04 15:30:14