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[IEEE 2020 International Conference on Computing, Networking and Communications (ICNC) - Big Island, HI, USA (2020.2.17-2020.2.20)] 2020 International Conference on Computing, Networking and Communications (ICNC) - On Performance of Multiuser Underwater Wireless Optical Communication Systems
摘要： This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage VC E O N and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.
关键词： power cycling test,physics-of-failure,Failure mechanism,lifetime model,insulated-gate bipolar transistor module,reliability
更新于2025-09-23 15:21:01
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[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Manipulation of Biomolecules Into Nanogap by Plasmonic Optical Excitation for Highly Sensitive Biosensing
摘要： This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage VC E O N and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.
关键词： insulated-gate bipolar transistor module,physics-of-failure,power cycling test,lifetime model,Failure mechanism,reliability
更新于2025-09-23 15:19:57
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[IEEE 2019 International Conference on Communications, Information System and Computer Engineering (CISCE) - Haikou, China (2019.7.5-2019.7.7)] 2019 International Conference on Communications, Information System and Computer Engineering (CISCE) - Remaining Useful Lifetime Prediction of Semiconductor Lasers Using Radiation-Induced Model and Particle Filtering Method
摘要： The main factor, which leads to semiconductor lasers degradation in space mission experiments, is the introduction of lattice defects in the detector material produced by radiation. Therefore, a new remaining useful life (RUL)prediction method considering radiation effect is presented. The prediction method is based on failure mechanisms and particle filters, which realizes the combination of a physical model and data-driven method. The particle filters can abundantly employ degradation data and avoid ignoring the failure mechanism. Accelerated degradation testing (ADT) is proposed for effectively assessing the proposed prediction method, in which the proton radiation is selected as the accelerated stress. The prediction results are compared with other methods to verify the accuracy and effectiveness of the proposed prediction method.
关键词： Particle filter,Remaining useful life,radiation effect,Physics of failure,Accelerated degradation test
更新于2025-09-11 14:15:04