- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Design of a Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With X-Parameters for 5G Communications
摘要： This paper presents a monolithic microwave integrated circuit Doherty power amplifier (DPA) operating at sub-6 GHz for 5G communication applications by a 0.25-μm gallium nitride high-electron mobility transistor process. A compact impedance inverter and output matching of the DPA are achieved using a transmission line network and shunt capacitors. Also, the size ratio of power cells in the main and auxiliary amplifiers is optimized for a high efficiency at output power backoff (OPBO). The measured peak output power (Pout) and the 1-dB compression point (P1 dB) are 38.7 and 32.1 dBm, respectively, at 5.9 GHz. The power-added efficiency at 6-dB OPBO is up to 49.5%. Without digital predistortion (DPD), the DPA can deliver an average Pout of 23.5 dBm with error vector magnitude (EVM) <?28 dB and 21.5 dBm with EVM <?32 dB for 64-quadrature amplitude modulation (QAM) and 256-QAM signals, respectively. The measured X-parameters are employed to further investigate the DPA nonlinear characteristics and verify the accuracy of conventionally used power amplifier characterization/measurement methods for system-level design and testing applications. The simulated results based on the X-parameters also indicate that the average output power can be enhanced up to 25.7 dBm with DPD for 256-QAM.
关键词： 5G communication,monolithic microwave integrated circuit (MMIC),X-parameters,power-added efficiency (PAE),power amplifier (PA),Doherty,gallium nitride (GaN)
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Kuta, Bali, Indonesia (2019.10.23-2019.10.25)] 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Measurement of Complex Permittivity of Tissue-Equivalent Liquid Poured in a Waveguide Well
摘要： A method to characterize the memory effects in a nonlinear concurrent dual-band transmitter is presented. It is an extension of the conventional two-tone test for power amplifiers to concurrent dual-band transmitters. The output signal of a concurrent dual-band transmitter is affected not only by intermodulation (IM) products but also by cross-modulation (CM) products. In one frequency band, the transmitter is excited by a two-tone signal which frequency separation is swept. In the second band, the transmitter is concurrently excited by another two-tone signal with slightly wider frequency separation. The frequency difference of the two signals is fixed during the frequency sweep. The two-tone test is made at different power levels. The upper and lower third-order IM and CM products are measured. The asymmetry between the upper and lower the third-order transmitter’s memory effects. The measurement results show that the memory effects are more dominant in the third-order IM products than in the CM products. An error analysis and system calibration was performed and measurement results for two different devices are presented.
关键词： cross modulation (CM),dual band,digital predistortion (DPD),multiple input multiple output (MIMO),Amplifier,power amplifier (PA),intermodulation (IM)
更新于2025-09-23 15:19:57
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Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub
摘要： In this paper, we describe the design of the first reported full W-band (75–110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology. The discussed MMICs come in two versions. Over a bandwidth (BW) of 70–110 GHz, the three-stage PA can deliver, on average, 25.6 dBm with a power-added efficiency (PAE) of 6.5%, while the four-stage PA is able to generate 27 dBm with a PAE of 6.1%. A peak output power of 28.6 dBm is achieved at 80 GHz with a PAE of 8.6%, which corresponds to a power density of 2.6 W/mm. The significant BW was achieved partially by incorporating a novel type of broadband radial stub into the design, which can provide nearly a twofold rejection-BW improvement over the conventional version. To the best of our knowledge, no other solid-state circuit can deliver such power levels over the complete W-band.
关键词： monolithic microwave integrated circuit (MMIC),Broadband,power amplifier (PA),high-electron-mobility transistor (HEMT),W-band (75–110 GHz),radial stub,gallium nitride,millimeter-waves (mm-waves)
更新于2025-09-09 09:28:46
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Partial Least Squares Identification of Multi Look-Up Table Digital Predistorters for Concurrent Dual-Band Envelope Tracking Power Amplifiers
摘要： This paper presents a technique to estimate the coefficients of a multiple-look-up table (LUT) digital predistortion (DPD) architecture based on the partial least-squares (PLS) regression method. The proposed 3-D distributed memory LUT architecture is suitable for efficient FPGA implementation and compensates for the distortion arising in concurrent dual-band envelope tracking power amplifiers. On the one hand, a new variant of the orthogonal matching pursuit algorithm is proposed to properly select only the best LUTs of the DPD function in the forward path, and thus reduce the number of required coefficients. On the other hand, the PLS regression method is proposed to address both the regularization problem of the coefficient estimation and, at the same time, reducing the number of coefficients to be estimated in the DPD feedback identification path. Moreover, by exploiting the orthogonality of the PLS transformed matrix, the computational complexity of the parameters’ identification can be significantly simplified. Experimental results will prove how it is possible to reduce the DPD complexity (i.e., the number of coefficients) in both the forward and feedback paths while meeting the targeted linearity levels.
关键词： principal component analysis (PCA),look-up tables (LUTs),power amplifier (PA),envelope tracking (ET),partial least squares (PLS),Digital predistortion (DPD)
更新于2025-09-09 09:28:46
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Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends
摘要： A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthesis methodology is proposed that minimizes the overall losses by combining the PA output and the LNA input matching networks together with the T/R switch into one network. The technique improves mm-wave transceiver performance in terms of PA efficiency and LNA noise figure. The proposed T/R combiner can achieve high linearity and can handle large PA output voltage swings. The architecture can be implemented in any process which provides high integration capability. A Ka-band implementation is demonstrated using 45 nm CMOS silicon-on-insulator that includes a high power, four-stack-based PA and an inductively source-degenerated cascode-based LNA. Within the front-end, the PA achieves saturated output power of 23.6 dBm with peak power added efficiency of 28%, while the LNA achieves NF of 3.2 dB. The overall chip area is 0.54 mm2, including pads.
关键词： transmit/receive (T/R) switch,low-noise amplifier (LNA),power amplifier (PA),5G transmitters,stacked power amplifier,silicon-on-insulator (SOI),time-division duplex (TDD),CMOS,millimeter-wave (mm-wave),Ka-band
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family
摘要： This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors’ 0.25 μm GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.
关键词： pseudomorphic high electron mobility transistor (pHEMT),X-Band,wideband amplifiers,high efficiency,Power Amplifier (PA),thermal analysis,EM simulation,monolithic microwave integrated circuit (MMIC)
更新于2025-09-04 15:30:14