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Single Flip-Chip Packaged Dielectric Resonator Antenna for CMOS Terahertz Antenna Array Gain Enhancement
摘要： A single dielectric resonator antenna (DRA) capable of enhancing the antenna gain of each element of a 2×2 THz antenna array realized in a 0.18-μm CMOS technology is proposed in this work. The DRA implemented in a low-cost integrated-passive-device (IPD) technology is flip-chip packaged onto the CMOS antenna array chip through low-loss gold bumps. By designing the DRA to work at the higher-order mode of TE3,δ,9, only single DRA instead of conventionally needing four DRAs is required to simultaneously improve the antenna gain of each element of the 2×2 antenna array. This not only simplifies the assembly process but it can also reduce the assembly cost. Moreover, the DRA can provide great antenna gain enhancement because of being made of high-resistivity silicon material and higher-order mode operation. The simulated antenna gain of each on-chip patch antenna of the 2×2 CMOS antenna array can be increased from 0.1 to 8.6 dBi at 339 GHz as the DRA is added. To characterize the proposed DRA, four identical power detectors (PDs) are designed and integrated with each element of the 2×2 THz antenna array, respectively. By measuring the voltage responsivity of each PD output, the characteristics of each antenna of the antenna array with the proposed DRA, including the gain enhancement level and radiation pattern, can be acquired. The measurement results follow well with the simulated ones, verifying the proposed DRA operation principle. The four PDs with the proposed DRA are also successfully employed to demonstrate a THz imaging system at 340 GHz. To the best of the authors’ knowledge, the proposed DRA is the one with the highest-order operation mode at THz frequencies reported thus far.
关键词： Silicon,Flip-chip packaging,Terahertz,CMOS,Terahertz imaging system,Antenna,Higher-order mode,Power detector,Dielectric resonator antenna
更新于2025-09-23 15:23:52
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A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging
摘要： This paper presents a fully integrated system-on-a-chip for real-time terahertz super-resolution near-field imaging. The chip consists of 128 sensing pixels with individual cross-bridged double 3-D split-ring resonators arranged in a 3.2 mm long 2 × 64 1-D array. It is implemented in 0.13-μm SiGe bipolar complementary metal–oxide–semiconductor technology and operated at around 550 GHz. All the functions, including sensor illumination, near-field sensing, and detection, are co-integrated with a readout integrated circuit for real-time image acquisition. The pixels exhibit a permittivity-based imaging contrast with a worst case estimated relative permittivity uncertainty of 0.33 and 10–12-μm spatial resolution. The sensor illumination is provided with on-chip oscillators feeding four-way equal power divider networks to enable an effective pixel pitch of 25 μm and a dense fill factor of 48% for the 1-D sensing area. The oscillators are equipped with electronic chopping to avoid 1/f-noise-related desensitization for the SiGe-heterojunction bipolar transistor power detectors integrated at each pixel. The chip features both an analog readout mode and a lock-in-amplifier-based digital readout mode. In the analog readout mode, the measured dynamic range (DR) is 63.8 dB for a 1-ms integration time at an external lock-in amplifier. The digital readout mode achieves a DR of 38.5 dB at 28 f/s. The chip consumes 37–104 mW of power and is packaged into a compact imaging module. This paper further demonstrates real-time acquisition of 2-D terahertz super-resolution images of a nickel mesh with 50-μm feature size, as well as a biometric human fingerprint.
关键词： terahertz,system-on-a-chip (SoC),SiGe heterojunction bipolar transistor (HBT),split-ring resonator (SRR),near-field array,3-push Colpitts oscillator,super-resolution imaging,near-field scanning optical microscopy (NSOM),power detector
更新于2025-09-09 09:28:46