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- 摘要
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Near Infrared Absorption Enhancement of Graphene for High-Responsivity Photodetection
摘要： As a key component in the wind turbine system, the power electronic converter and its power semiconductors suffer from complicated power loadings related to environment, and are proven to have high failure rates. Therefore, correct lifetime estimation of wind power converter is crucial for the reliability improvement and also for cost reduction of wind power technology. Unfortunately, the existing lifetime estimation methods for the power electronic converter are not yet suitable in the wind power application, because the comprehensive mission profiles are not well specified and included. Consequently, a relative more advanced approach is proposed in this paper, which is based on the loading and strength analysis of devices and takes into account different time constants of the thermal behaviors in power converter. With the established methods for loading and lifetime estimation for power devices, more detailed information of the lifetime-related performance in wind power converter can be obtained. Some experimental results are also included to validate the thermal behavior of power device under different mission profiles.
关键词： lifetime prediction,IGBT,power semiconductor device,thermal cycling,wind power,mission profiles
更新于2025-09-23 15:19:57
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Coexistence of quasi-CW and SBS-boosted self-Q-switched pulsing in ytterbium-doped fiber laser with low Q-factor cavity
摘要： As a key component in the wind turbine system, the power electronic converter and its power semiconductors suffer from complicated power loadings related to environment, and are proven to have high failure rates. Therefore, correct lifetime estimation of wind power converter is crucial for the reliability improvement and also for cost reduction of wind power technology. Unfortunately, the existing lifetime estimation methods for the power electronic converter are not yet suitable in the wind power application, because the comprehensive mission profiles are not well specified and included. Consequently, a relative more advanced approach is proposed in this paper, which is based on the loading and strength analysis of devices and takes into account different time constants of the thermal behaviors in power converter. With the established methods for loading and lifetime estimation for power devices, more detailed information of the lifetime-related performance in wind power converter can be obtained. Some experimental results are also included to validate the thermal behavior of power device under different mission profiles.
关键词： lifetime prediction,IGBT,power semiconductor device,thermal cycling,wind power,mission profiles
更新于2025-09-23 15:19:57
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Realizing Asymmetric Boundary Conditions for Plasmonic THz Wave Generation in HEMTs
摘要： As a key component in the wind turbine system, the power electronic converter and its power semiconductors suffer from complicated power loadings related to environment, and are proven to have high failure rates. Therefore, correct lifetime estimation of wind power converter is crucial for the reliability improvement and also for cost reduction of wind power technology. Unfortunately, the existing lifetime estimation methods for the power electronic converter are not yet suitable in the wind power application, because the comprehensive mission profiles are not well specified and included. Consequently, a relative more advanced approach is proposed in this paper, which is based on the loading and strength analysis of devices and takes into account different time constants of the thermal behaviors in power converter. With the established methods for loading and lifetime estimation for power devices, more detailed information of the lifetime-related performance in wind power converter can be obtained. Some experimental results are also included to validate the thermal behavior of power device under different mission profiles.
关键词： power semiconductor device,lifetime prediction,thermal cycling,wind power,IGBT,mission profiles
更新于2025-09-19 17:13:59
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[IEEE 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy (2019.9.3-2019.9.5)] 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Laser triggering of solid-state switches
摘要： A theoretical and experimental investigation has been made into the laser activated Silicon Controlled Rectifier (SCR) turn-on process. Thanks to the measurement of illumination profile of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hotspots of the initially conducting area region adjacent to the gate. The improvement of switching characteristics with respect to the datasheet parameters for an electrically gated configuration will be demonstrated; 8-fold turn-on delay reduction and the rate of rise of the on-state current (di/dt) increased over 45 times at low pulse repetition rate, without destroying the device.
关键词： New switching devices,Thyristors,Photovoltaic,Switching losses,Particle accelerator,Transistor,Pulsed power,Semiconductor device
更新于2025-09-16 10:30:52
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[IEEE 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL) - Padua (2018.6.25-2018.6.28)] 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL) - Characterization and Modeling of the Impact of the Substrate Potential in the Dynamic and Static Behavior of Power GaN-on-Si HEMTs
摘要： The maturity of GaN power transistors grown on conductive Si substrates permits today the integration of gate drivers and half bridges in a monolithic integrated chip. Among others, the back-gating effect arising from the substrate potential poses a challenge for circuit designers and hinders the development of this promising technology. In this paper, we characterize the effect of the substrate potential in the IV characteristics of a commercially available GaN power HEMT. A modified version of the ASM-HEMT compact transistor model which accounts for the effect of the substrate potential on IV and part of the CV characteristics is extracted from these measurements. Through transient simulations of the fitted transistor model, the impact of the bulk potential in the dynamic and static characteristics of power GaN-on-Si HEMTs is investigated.
关键词： substrate potential,power semiconductor device,semiconductor device modeling,Gallium Nitride,current-voltage characteristics,HEMTs
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Novel monolithically integrated bidirectional GaN HEMT
摘要： Lateral chip architecture of GaN power semiconductors enables design of a monolithically integrated GaN HEMT featuring bidirectional blocking capability. The proposed bidirectional GaN HEMT allows for substantially reduced conduction losses in applications such as the multilevel T-type inverter which benefit from power semiconductors with bidirectional voltage blocking capability. In static and dynamic characterizations, the monolithically integrated bidirectional GaN HEMT exhibits similar switching and on-state behavior like conventional unidirectional GaN HEMTs.
关键词： bidirectional,T-type inverter,power semiconductor device,multilevel inverter,switching characteristics,Gallium Nitride,dynamic on-state resistance,HEMTs,integration,semiconductor
更新于2025-09-04 15:30:14