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The Luminous mechanism of Eu <sup>2+</sup> and Dy <sup>3+</sup> co-doped long persistent luminous fiber
摘要： Fiber-forming polymer polyethylene terephthalate chips were blended with Eu2+ and Dy3+ co-doped SrAl2O4 (SAOED) to afford luminous fiber with long and persistent afterglow. A dynamical model was set up to study the afterglow process in order to correlate the afterglow characteristics with the trap levels of SAOED and luminous fiber. The results indicated that the illustration of initial afterglow for luminous fiber was obviously lower than that of SAOED, but its decay process was moderately slow and therefore longer than that of SAOED. Compared with SAOED, the thermo-luminescence peak of the fiber shifted to the higher temperature, and its intensity was lower than that of SAOED. With the time extension of delay time after excitation, the depth of trap level for luminous fiber in our studies did not show any significant change. The afterglow decay behavior can be best fit by using I ? I0/(1 + bt)2; the fitting showed that the afterglow decay process followed the second order dynamics.
关键词： preparation process,luminous fiber,trap level,mechanism,afterglow
更新于2025-09-04 15:30:14
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Insight of surface treatments for CMOS compatibility of InAs nanowires
摘要： A CMOS compatible process is presented in order to grow self-catalyzed InAs nanowires on silicon by molecular beam epitaxy. The crucial step of this process is a new in-situ surface preparation under hydrogen (gas or plasma) during the substrate degassing combined with an in-situ arsenic annealing prior to growth. Morphological and structural characterizations of the InAs nanowires are presented and growth mechanisms are discussed in detail. The major influence of surface termination is exposed both experimentally and theoretically using statistics on ensemble of nanowires and density functional theory (DFT) calculations. The differences observed between Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) growth of InAs nanowires can be explained by these different surfaces terminations. The transition between a vapor solid (VS) and a vapor liquid solid (VLS) growth mechanism is presented. Optimized growth conditions lead to very high aspect ratio nanowires (up to 50 nm in diameter and 3 micron in length) without passing the 410 °C thermal limit, which makes the whole process CMOS compatible. Overall, our results suggest a new method for surface preparation and a possible tuning of the growth mechanism using different surface terminations.
关键词： nanowires,growth modeling,self-catalyzed growth,hydrogen preparation,density functional theory (DFT) modeling,III-V semiconductors on silicon,InAs
更新于2025-09-04 15:30:14
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Controllable synthesis of transparent dispersions of monodisperse anatase-TiO2 nanoparticles and nanorods
摘要： Controllable synthesis of monodisperse nanocrystals is still a great challenge. In this study, the control strategy of alcohol medium was developed to conveniently synthesize monodisperse anatase-TiO2 nanocrystals with controllable size and shape by sol-gel method combined with solvothermal treatment. The effects of the amount of stearic acid and water, and molecular structure of alcohol on the size, the shape and the dispersity of TiO2 nanocrystals were explored. The optimum synthesis conditions were achieved. Monodisperse TiO2 nanoparticles and nanorods were obtained by using linear and branched alcohols, respectively. The size of nanoparticles decreased from 12 to 5 nm with increasing carbon number of linear alcohol. The aspect ratio of nanorods was adjusted from 1 to 5 by selecting alcohols with different locations of branched methyl group. The as-prepared monodisperse TiO2 nanocrystals could be readily dispersed in some commonly-used solvents to form transparent nanodispersions. Furthermore, a possible formation mechanism was also investigated.
关键词： Monodisperse TiO2 nanocrystals,transparent dispersion,nanoparticles,nanorods,tunable preparation
更新于2025-09-04 15:30:14