[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field

摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.